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Diodes Incorporated |
MOSFET P-CH 20V 18A PWRDI3333-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4621pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock4,128 |
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MOSFET (Metal Oxide) | 20V | 18A (Ta), 40A (Tc) | 2.5V, 10V | 1.3V @ 250µA | 85nC @ 10V | 4621pF @ 10V | ±12V | - | 2.3W (Ta) | 5.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 450MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock24,000 |
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MOSFET (Metal Oxide) | 100V | 450mA (Ta) | 5V, 10V | 2.4V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 1.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V V-DFN3333-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock7,024 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2nC @ 10V | 2826pF @ 15V | ±25V | - | 2.4W (Ta) | 6.8 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V V-DFN3333-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,312 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2nC @ 10V | 2826pF @ 15V | ±25V | - | 2.4W (Ta) | 6.8 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 60V 55A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1016pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 53W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,216 |
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MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 3V @ 250µA | 19.7nC @ 10V | 1016pF @ 30V | ±20V | - | 1.6W (Ta), 53W (Tc) | 23 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,952 |
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MOSFET (Metal Oxide) | 30V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 10V | 2370pF @ 15V | ±20V | - | 2.4W (Ta), 62W (Tc) | 3.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,768 |
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MOSFET (Metal Oxide) | 30V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 10V | 2370pF @ 15V | ±20V | - | 2.4W (Ta), 62W (Tc) | 3.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 60V 50A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-4L
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock7,248 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 20.1nC @ 10V | 1143pF @ 25V | ±20V | - | 2.1W (Ta) | 23 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Diodes Incorporated |
MOSFET N-CH 60V 13A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock3,520 |
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MOSFET (Metal Oxide) | 60V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 2V @ 250µA | 41.3nC @ 10V | 2090pF @ 30V | ±20V | - | 2.2W (Ta), 41W (Tc) | 7.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 13A PWDI3333-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2713pF @ 30V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,136 |
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MOSFET (Metal Oxide) | 60V | 13A (Ta), 60A (Tc) | 4.5V, 10V | 2V @ 250µA | 50.4nC @ 10V | 2713pF @ 30V | ±12V | - | 2.2W (Ta), 41W (Tc) | 7.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET NCH 30V 16A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27.8W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,432 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 55.6A (Tc) | 4.5V, 10V | 3V @ 250µA | 22.6nC @ 10V | 1320pF @ 15V | ±20V | - | 27.8W (Tc) | 6 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 8V 10A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 4V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 890mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1515-9
- Package / Case: 9-UFBGA, WLBGA
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Package: 9-UFBGA, WLBGA |
Stock2,656 |
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MOSFET (Metal Oxide) | 8V | 10A (Ta) | 2.5V, 4.5V | 1.1V @ 250µA | 10.5nC @ 4.5V | 1060pF @ 4V | -6V | - | 890mW (Ta) | 10 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
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Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock312,000 |
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MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 2.4V @ 1mA | - | 40pF @ 25V | ±20V | - | 625mW (Ta) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.27A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock240,000 |
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MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 2.4V @ 1mA | - | 35pF @ 18V | ±20V | - | 625mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 16A POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,008 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 42nC @ 10V | 2000pF @ 15V | ±20V | - | 900mW (Ta) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 10.3A PWDI3333-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2577pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,944 |
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MOSFET (Metal Oxide) | 60V | 10.3A (Ta), 45A (Tc) | 4.5V, 10V | 3V @ 250µA | 55.4nC @ 10V | 2577pF @ 30V | ±20V | - | 1W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 40V 14.4A PWDI3333-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3537pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,224 |
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MOSFET (Metal Oxide) | 40V | 14.4A (Ta) | 3.3V, 10V | 3V @ 250µA | 74nC @ 10V | 3537pF @ 20V | ±20V | - | 1W (Ta) | 7.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 0.6A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock6,944 |
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MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 3V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 1 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,208 |
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MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 8.6nC @ 10V | 448pF @ 15V | ±20V | - | 1.5W (Ta) | 65 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V SO-8
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,328 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET PCH 60V 7.7A POWERDI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,728 |
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MOSFET (Metal Oxide) | 60V | 7.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 53.1nC @ 10V | 2569pF @ 30V | ±20V | - | 1W (Ta) | 25 mOhm @ 5A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET PCH 60V 7.7A POWERDI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,808 |
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MOSFET (Metal Oxide) | 60V | 7.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 53.1nC @ 10V | 2569pF @ 30V | ±20V | - | 1W (Ta) | 25 mOhm @ 5A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 75V 7.8A PWDI3333-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2737pF @ 35V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock5,616 |
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MOSFET (Metal Oxide) | 75V | 7.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 56.5nC @ 10V | 2737pF @ 35V | ±20V | - | 900mW (Ta) | 22 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 6V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 2.16W
- Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,000 |
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MOSFET (Metal Oxide) | 12V | 19A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 9.5nC @ 6V | 913pF @ 6V | -6V | - | 2.16W | 11.7 mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 6V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 2.16W
- Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,120 |
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MOSFET (Metal Oxide) | 12V | 19A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 9.5nC @ 6V | 913pF @ 6V | -6V | - | 2.16W | 11.7 mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,048 |
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MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | 1480pF @ 30V | ±20V | - | 2.4W | 50 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,960 |
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MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | 1480pF @ 30V | ±20V | - | 2.4W | 50 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,416 |
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MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 3V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | ±16V | - | 42W (Tc) | 9.5 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |