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Diodes Incorporated |
MOSFET P-CH 100V 0.23A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 375mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock144,000 |
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MOSFET (Metal Oxide) | 100V | 230mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 8 Ohm @ 375mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,600 |
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MOSFET (Metal Oxide) | 60V | 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 53.1nC @ 10V | 2569pF @ 30V | ±20V | - | 3.2W | 33 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6807pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,440 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 139nC @ 10V | 6807pF @ 15V | ±20V | - | 3.9W (Ta) | 7.5 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 70V 3.8A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 70V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.11W (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,648 |
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MOSFET (Metal Oxide) | 70V | 3.8A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 18nC @ 10V | 635pF @ 40V | ±20V | - | 2.11W (Ta) | 160 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET PCH 20V 9.3A 8SO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2575pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,984 |
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MOSFET (Metal Oxide) | 20V | 9.3A (Ta) | 2.5V, 10V | 1.1V @ 250µA | 60.2nC @ 10V | 2575pF @ 10V | ±12V | - | 1.6W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 40V 8-SOIC
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,424 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET PCH 40V 10.3A POWERDI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,544 |
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MOSFET (Metal Oxide) | 40V | 10.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 68.6nC @ 10V | 3426pF @ 20V | ±20V | - | 1W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET PCH 40V 10.3A POWERDI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3426pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,296 |
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MOSFET (Metal Oxide) | 40V | 10.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 68.6nC @ 10V | 3426pF @ 20V | ±20V | - | 1W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 7.7A POWERDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock4,608 |
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MOSFET (Metal Oxide) | 60V | 7.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 53.1nC @ 10V | 2569pF @ 30V | ±20V | - | 1W (Ta) | 25 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 2.8A SOT23-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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Package: SOT-23-6 |
Stock4,176 |
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MOSFET (Metal Oxide) | 60V | 2.8A (Ta) | 4.5V, 10V | 1V @ 250µA | 5.8nC @ 10V | 459pF @ 40V | ±20V | - | 1.1W (Ta) | 80 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET NCH 40V 13A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,248 |
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MOSFET (Metal Oxide) | 40V | 13A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 25.5nC @ 10V | 1405pF @ 20V | ±20V | - | 1.5W (Ta), 100W (Tc) | 10 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI506
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,584 |
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MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2nC @ 10V | 2826pF @ 15V | ±25V | - | 2.7W (Ta) | 7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 60V 10.3A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2577pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,944 |
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MOSFET (Metal Oxide) | 60V | 10.3A (Ta), 45A (Tc) | 4.5V, 10V | 3V @ 250µA | 55.4nC @ 10V | 2577pF @ 30V | ±20V | - | 1W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 60V 10.3A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2577pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock7,952 |
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MOSFET (Metal Oxide) | 60V | 10.3A (Ta), 45A (Tc) | 4.5V, 10V | 3V @ 250µA | 55.4nC @ 10V | 2577pF @ 30V | ±20V | - | 1W (Ta) | 13 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 17.6A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,848 |
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MOSFET (Metal Oxide) | 30V | 17.6A (Ta), 62A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | ±20V | - | 900mW (Ta) | 4.4 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 17.6A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,248 |
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MOSFET (Metal Oxide) | 30V | 17.6A (Ta), 62A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | ±20V | - | 900mW (Ta) | 4.4 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 60V 25A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,344 |
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MOSFET (Metal Oxide) | 60V | 5.7A (Ta), 24A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.8nC @ 10V | 584pF @ 25V | ±20V | - | 1.2W (Ta) | 50 mOhm @ 5.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET NCH 30V 10.4A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,560 |
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MOSFET (Metal Oxide) | 30V | 10.4A (Ta), 25A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 10V | 2370pF @ 15V | +20V, -16V | - | 2.1W (Ta), 42W (Tc) | 4.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 10.4A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock6,192 |
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MOSFET (Metal Oxide) | 30V | 10.4A (Ta), 25A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 10V | 2370pF @ 15V | +20V, -16V | - | 2.1W (Ta), 42W (Tc) | 4.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 11.5A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 940mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,856 |
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MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | ±25V | - | 940mW (Ta) | 10 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,840 |
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MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2nC @ 10V | 2826pF @ 15V | ±25V | - | 2.8W (Ta) | 6 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock7,280 |
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MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 3V @ 250µA | 64.2nC @ 10V | 2826pF @ 15V | ±25V | - | 2.8W (Ta) | 6 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 10.2A DFN2523-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4414pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2523-6
- Package / Case: 6-PowerUDFN
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Package: 6-PowerUDFN |
Stock6,672 |
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MOSFET (Metal Oxide) | 30V | 10.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 90nC @ 10V | 4414pF @ 15V | ±25V | - | 1W (Ta) | 14.5 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2523-6 | 6-PowerUDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock4,720 |
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MOSFET (Metal Oxide) | 20V | 89A (Tc) | 1.8V, 4.5V | 900mV @ 250µA | 125nC @ 10V | 4670pF @ 10V | ±10V | - | 2.2W (Ta) | 4 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,544 |
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MOSFET (Metal Oxide) | 20V | 89A (Tc) | 1.8V, 4.5V | 900mV @ 250µA | 125nC @ 10V | 4670pF @ 10V | ±10V | - | 2.2W (Ta) | 4 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET NCH 30V 15A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-4L
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
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Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock6,320 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta), 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 37nC @ 10V | 2075pF @ 15V | ±20V | - | 2W (Ta) | 9.5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Diodes Incorporated |
MOSFET P-CH 20V 12.7A PWRDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 3.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,544 |
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MOSFET (Metal Oxide) | 20V | 12.7A (Ta), 42A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 103nC @ 10V | 3350pF @ 10V | ±10V | - | 900mW (Ta) | 9.5 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 18A PWRDI3333-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,560 |
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MOSFET (Metal Oxide) | 20V | 18A (Ta), 40A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 156nC @ 10V | 5940pF @ 10V | ±10V | - | 2.3W (Ta) | 6.7 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |