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Microsemi Corporation |
MOSFET 2N-CH 1200V 17A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 17A
- Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,488 |
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Standard | 1200V (1.2kV) | 17A | 684 mOhm @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 6A 8-TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock11,554,332 |
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Logic Level Gate | 20V | - | 27 mOhm @ 6A, 10V | 1V @ 1mA | 5.2nC @ 4.5V | 290pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 4.9A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock29,580 |
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Logic Level Gate | 20V | 4.9A | 46 mOhm @ 4.9A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | 985pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 30V 6.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
- Power - Max: 1.81W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock51,408 |
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Logic Level Gate | 30V | 6.5A | 20 mOhm @ 12.6A, 10V | 1V @ 250µA (Min) | 36.8nC @ 10V | 1890pF @ 15V | 1.81W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V .1A SOT-353
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: UMT5
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Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock586,560 |
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Logic Level Gate | 30V | 100mA | 8 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13pF @ 5V | 150mW | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | UMT5 |
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NXP |
MOSFET 2N-CH 30V 0.125A 6TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 125mA
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock142,200 |
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Logic Level Gate | 30V | 125mA | 8 Ohm @ 10mA, 4V | 1.5V @ 100µA | 0.35nC @ 4.5V | 18.5pF @ 5V | 200mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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STMicroelectronics |
MOSFET 2N-CH 20V 5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,474,472 |
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Logic Level Gate | 20V | 5A | 40 mOhm @ 2.5A, 4.5V | 600mV @ 250µA | 11.5nC @ 4.5V | 460pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 500V 163A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 163A
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
- Power - Max: 1136W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,416 |
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Standard | 500V | 163A | 22.5 mOhm @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | 1136W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Diodes Incorporated |
MOSFET N/P-CH 60V 5.1A 8SO
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 30V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
- Power - Max: 1.24W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,064 |
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Standard | 60V | 5.1A (Ta) | 40 mOhm @ 8A, 10V | 3V @ 250µA | 20.8nC @ 30V | 1130pF @ 15V | 1.24W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 30V 12A PPAK 1212-8
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A, 16A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
- Power - Max: 20W, 30W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair?
- Supplier Device Package: 6-PowerPair?
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Package: 6-PowerPair? |
Stock11,868 |
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Logic Level Gate | 30V | 12A, 16A | 24 mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | 435pF @ 15V | 20W, 30W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair? | 6-PowerPair? |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 500V 0.37A 8SOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 370mA
- Rds On (Max) @ Id, Vgs: 6.2 Ohm @ 185mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock20,040 |
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Standard | 500V | 370mA | 6.2 Ohm @ 185mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 200pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 600V 95A SP3
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 95A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 462W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock4,720 |
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Super Junction | 600V | 95A | 24 mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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EPC |
TRANS GAN 2N-CH 120V BUMPED DIE
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock221,688 |
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GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 0.32A 6TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 320mA
- Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power - Max: 420mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock46,020 |
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Logic Level Gate | 60V | 320mA | 1.6 Ohm @ 300mA, 10V | 1.5V @ 250µA | 0.8nC @ 4.5V | 50pF @ 10V | 420mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Rohm Semiconductor |
40V 4.5A/5.5A, DUAL NCH+PCH, SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 40V | 4.5A (Ta), 5.5A (Ta) | 55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V | 2.5V @ 1mA | 3.5nC @ 10V, 17.2nC @ 10V | 150pF @ 20V, 920pF @ 20V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT26 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V
- Power - Max: 490µW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: - |
Request a Quote |
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- | 50V | 410mA (Ta) | 2Ohm @ 50mA, 5V | 1V @ 250µA | 1.6nC @ 10V | 42.4pF @ 25V | 490µW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 30A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
- Power - Max: 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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Package: - |
Request a Quote |
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- | 30V | 30A (Tc) | 7mOhm @ 12A, 10V | 2.5V @ 250µA | 39nC @ 10V | 1869pF @ 15V | 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Micro Commercial Co |
MOSFET N/P-CH 20V 5A/4A SOT23-6L
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A, 4A
- Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 12nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF, 405pF @ 8V, 10V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
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Package: - |
Stock380,604 |
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- | 20V | 5A, 4A | 38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V | 1V @ 250µA | 11nC @ 4.5V, 12nC @ 2.5V | 800pF, 405pF @ 8V, 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L |
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IXYS |
MOSFET N/P-CH 100V 54A I4-PAC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
- Power - Max: 89W, 132W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUSi5-PAK™
- Supplier Device Package: ISOPLUS i4-PAC™
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Package: - |
Request a Quote |
|
- | 100V | 54A (Tc), 62A (Tc) | 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V | 4V @ 250µA, 4.5V @ 250µA | 197nC @ 10V, 104nC @ 10V | 1370pF @ 25V, 5080pF @ 25V | 89W, 132W | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-PAK™ | ISOPLUS i4-PAC™ |
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Microchip Technology |
SIC 2N-CH 1200V 495A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
- Power - Max: 2031W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1000V | 2031W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Diotec Semiconductor |
IC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 350mA
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SOT-26
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Package: - |
Request a Quote |
|
Logic Level Gate | 60V | 350mA | 1.5Ohm @ 500mA, 10V | 1.5V @ 250µA | 1.3nC @ 10V | 35pF @ 25V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SOT-26 |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 7A/6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 6A (Ta)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V, 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V, 480pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock59,067 |
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- | 30V | 7A (Ta), 6A (Ta) | 28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V | 2.5V @ 1mA | 7.2nC @ 10V, 10nC @ 10V | 300pF @ 15V, 480pF @ 15V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 6A/4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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Logic Level Gate, 4V Drive | 30V | 6A (Ta), 4.5A (Ta) | 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V | 2.5V @ 1mA | 7.2nC @ 5V, 8.5nC @ 5V | 520pF @ 10V, 850pF @ 10V | 2W (Ta) | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 12V 30A 10DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-AlphaDFN (2.98x1.49)
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Package: - |
Request a Quote |
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- | 12V | 30A (Ta) | 2.8mOhm @ 5A, 4.5V | 1.3V @ 250µA | 32nC @ 4.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 10-SMD, No Lead | 10-AlphaDFN (2.98x1.49) |
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Micro Commercial Co |
MOSFET 2N-CH 30V 12A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A
- Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock24,000 |
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- | 30V | 12A | 12mOhm @ 8A, 10V | 2.5V @ 250µA | 28nC @ 10V | 950pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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EPC |
GANFET 2N-CH 80V 28A DIE
- FET Type: GaNFET (Gallium Nitride)
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Stock18,393 |
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- | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 12A (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, 115mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V, 1120pF @ 25V
- Power - Max: 104W (Tj), 69W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PDFN5060-8D
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Package: - |
Request a Quote |
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- | 100V | 40A (Tc), 12A (Tc) | 24mOhm @ 20A, 10V, 115mOhm @ 12A, 10V | 2.5V @ 250µA | 17nC @ 10V, 20nC @ 10V | 1270pF @ 25V, 1120pF @ 25V | 104W (Tj), 69W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PDFN5060-8D |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V TSOT26 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
- Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: - |
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- | 30V | 760mA (Ta) | 1Ohm @ 400mA, 4.5V | 1.1V @ 250µA | 1.6nC @ 8V | 54pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |