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Vishay Siliconix |
MOSFET 2P-CH 20V 4.1A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock258,420 |
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Logic Level Gate | 20V | 4.1A | 30 mOhm @ 4.8A, 4.5V | 450mV @ 250µA (Min) | 30nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET N/P-CH 20V 6.1A 1206-8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
- Power - Max: 4.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock6,256 |
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Logic Level Gate | 20V | 6.1A, 4.8A | 52 mOhm @ 5A, 4.5V | 2V @ 250µA | 6.6nC @ 5V | 455pF @ 10V | 4.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Microsemi Corporation |
MOSFET 2N-CH 600V 20A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock7,520 |
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Standard | 600V | 20A | 276 mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | 5316pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 5.3A 8-TSSO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 10V
- Power - Max: 600mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock507,360 |
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Logic Level Gate | 20V | 5.3A | 22 mOhm @ 5.3A, 4.5V | 1.5V @ 250µA | 34nC @ 4.5V | 1015pF @ 10V | 600mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock237,612 |
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Logic Level Gate | 30V | 4.1A, 3.4A | 80 mOhm @ 4.1A, 10V | 3V @ 250µA | 6.6nC @ 4.5V | 282pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 6.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.6A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,536 |
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Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V SO-8
- FET Type: 2 N and 2 P-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V, 65 mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V, 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V
- Power - Max: 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,368 |
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Standard | 40V | 4.5A (Ta), 3.7A (Ta) | 45 mOhm @ 3.9A, 10V, 65 mOhm @ 4.2A, 10V | 3V @ 250µA | 5.9nC @ 4.5V, 5.4nC @ 4.5V | 574pF @ 20V, 587pF @ 20V | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock63,084 |
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Logic Level Gate | 30V | 5A | 51 mOhm @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 230pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSMT6 (SC-95)
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,544 |
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Logic Level Gate | 20V | 1.5A | 215 mOhm @ 1.5A, 4.5V | 2V @ 1mA | 3nC @ 4.5V | 270pF @ 10V | 1.25W | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 4.6A 6TSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock325,176 |
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Logic Level Gate | 20V | 4.6A | 23 mOhm @ 6A, 4.5V | 1V @ 250µA | 21nC @ 10V | 780pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Vishay Siliconix |
MOSFET N/P-CH 40V 10A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A, 9.2A
- Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
- Power - Max: 3.1W, 3.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock205,368 |
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Logic Level Gate | 40V | 10A, 9.2A | 17.5 mOhm @ 8A, 10V | 2V @ 250µA | 31nC @ 10V | 855pF @ 20V | 3.1W, 3.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET 2P-CH 20V 0.43A SOT-563
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 430mA
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock225,240 |
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Standard | 20V | 430mA | 900 mOhm @ 430mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 175pF @ 16V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET N/P-CH 60V SOT563
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
- Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Power - Max: 450mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock6,976 |
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Logic Level Gate | 60V | 500mA, 360mA | 1.7 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.3nC @ 4.5V | 30pF @ 25V | 450mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V
- Vgs(th) (Max) @ Id: 220mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,392 |
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Standard | 10.6V | - | 500 Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock406,416 |
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Logic Level Gate | 30V | 4.1A, 3.4A | 50 mOhm @ 7.8A, 10V | 1V @ 250µA (Min) | 12.2nC @ 10V | 600pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
MOSFET 2N-CH 55V 5.1A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 5.1A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,768 |
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Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 50V 305MA SOT26
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 305mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 400mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock27,246 |
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Standard | 50V | 305mA | 2 Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 400mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Vishay Siliconix |
MOSFET 2N-CH 20V 0.18A SC89-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock950,556 |
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Logic Level Gate | 20V | 180mA | 5 Ohm @ 200mA, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 40V 6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,216 |
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Logic Level Gate | 40V | 6A | 29 mOhm @ 6A, 10V | 3V @ 250µA | 11nC @ 5V | 955pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Sanyo |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET 2N-CH 80V 3.6A 8-SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Power - Max: 2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: - |
Request a Quote |
|
Logic Level Gate | 80V | 3.6A | 73mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V | 2W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Rohm Semiconductor |
MOSFET N/P-CH 60V 3A/3.5A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock18,162 |
|
- | 60V | 3A (Ta), 3.5A (Ta) | 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.1nC @ 10V, 17.3nC @ 10V | 135pF @ 30V, 850pF @ 30V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Microchip Technology |
SIC 6N-CH 1200V 89A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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Package: - |
Stock9 |
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- | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Diodes Incorporated |
MOSFET 2N-CH 60V 2.7A 8SO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Rds On (Max) @ Id, Vgs: 87mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
- Power - Max: 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: - |
Request a Quote |
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- | 60V | 2.7A (Ta) | 87mOhm @ 4.5A, 10V | 3V @ 250µA | 12.3nC @ 10V | 588pF @ 30V | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2P-CH 20V 0.36A SOT963
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V
- Power - Max: 380mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: - |
Request a Quote |
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- | 20V | 360mA (Ta) | 1.9Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.3nC @ 4.5V | 17pF @ 15V | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Good-Ark Semiconductor |
MOSFET 2N-CH 20V 0.8A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
- Power - Max: 312W (Tc)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock17,760 |
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- | 20V | 800mA (Tc) | 300mOhm @ 500mA, 4.5V | 1V @ 250µA | 1nC @ 4.5V | 75pF @ 10V | 312W (Tc) | -55°C ~ 150°C | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Panjit International Inc. |
MOSFET 2N-CH 30V 0.3A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock14,715 |
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- | 30V | 300mA (Ta) | 1.2Ohm @ 300mA, 4.5V | 1V @ 250µA | 0.9nC @ 4.5V | 45pF @ 10V | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 6A 6TSOPF
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-TSOP-F
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Package: - |
Stock12,447 |
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Logic Level Gate, 1.8V Drive | 20V | 6A (Ta) | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | 1030pF @ 10V | 1.4W (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | 6-TSOP-F |