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Infineon Technologies |
MOSFET 2P-CH 20V 0.39A SOT363
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 390mA
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
- Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock5,120 |
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Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DUAL DFN
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-WFDFN Exposed Pad
- Supplier Device Package: 6-DFN (2x5)
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Package: 6-WFDFN Exposed Pad |
Stock4,048 |
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- | - | - | - | - | - | - | - | - | Surface Mount | 6-WFDFN Exposed Pad | 6-DFN (2x5) |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH DUAL DFN
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN (2x2)
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Package: 6-WDFN Exposed Pad |
Stock6,592 |
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Standard | 20V | 3A (Ta) | 120 mOhm @ 3A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 700pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-DFN (2x2) |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 4A 8DFN
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 1.9W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-DFN (3x2)
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Package: 8-SMD, Flat Lead |
Stock6,080 |
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Logic Level Gate | 30V | 4A | 68 mOhm @ 4A, 10V | 2.3V @ 250µA | 10nC @ 10V | 290pF @ 15V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-DFN (3x2) |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 4A 8-DFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-DFN (3x3)
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Package: 8-SMD, Flat Lead |
Stock5,968 |
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Logic Level Gate | 20V | - | 22 mOhm @ 4A, 4.5V | 1.1V @ 250µA | 13nC @ 4.5V | 1100pF @ 10V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-DFN (3x3) |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 40V 8A TO252-5
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
- Power - Max: 1.6W, 1.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-6, DPak (5 Leads + Tab)
- Supplier Device Package: TO-252-5
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Package: TO-252-6, DPak (5 Leads + Tab) |
Stock93,780 |
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Logic Level Gate | 40V | 8A | 33 mOhm @ 8A, 10V | 3V @ 250µA | 9.2nC @ 10V | 404pF @ 20V | 1.6W, 1.7W | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-6, DPak (5 Leads + Tab) | TO-252-5 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 7A 8-PQFN
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 50V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PQFN (3.3x5)
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Package: 8-PowerWDFN |
Stock5,312 |
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Standard | 100V | 7A | 20 mOhm @ 7A, 10V | 4V @ 250µA | 16nC @ 10V | 980pF @ 50V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PQFN (3.3x5) |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 22A/30A 8DFN
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A, 30A
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
- Power - Max: 3.6W, 4.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerVDFN |
Stock7,456 |
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Logic Level Gate | 30V | 22A, 30A | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 22nC @ 10V | 1037pF @ 15V | 3.6W, 4.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN (5x6) |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI333
- FET Type: 1 N-Channel, 1 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8
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Package: 8-PowerVDFN |
Stock6,112 |
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Standard | - | 15A (Tc) | 25 mOhm @ 7A, 10V | 2.4V @ 250µA | 4.6nC @ 4.5V, 9.5nC @ 4.5V | 500pF @ 15V, 1188pF @ 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI333
- FET Type: 1 N-Channel, 1 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8
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Package: 8-PowerVDFN |
Stock2,400 |
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Standard | - | 15A (Tc) | 25 mOhm @ 7A, 10V | 2.4V @ 250µA | 4.6nC @ 4.5V, 9.5nC @ 4.5V | 500pF @ 15V, 1188pF @ 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 |
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ON Semiconductor |
MOSFET 2P-CH 20V 0.88A SC88-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 880mA
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
- Power - Max: 272mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,200 |
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Standard | 20V | 880mA | 260 mOhm @ 880mA, 4.5V | 1.2V @ 250µA | 2.2nC @ 4.5V | 155pF @ 20V | 272mW | -55°C ~ 150°C (TJ) | - | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
- Vgs(th) (Max) @ Id: 20mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock4,112 |
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Standard | 10.6V | - | 500 Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 4A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
- Power - Max: 1.92W, 1.78W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-MLP, Power33
- Supplier Device Package: MicroFET 3x3mm
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Package: 6-MLP, Power33 |
Stock3,136 |
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Logic Level Gate | 20V | 4A | 68 mOhm @ 4A, 4.5V | 2V @ 250µA | 3.4nC @ 4.5V | 270pF @ 10V | 1.92W, 1.78W | -55°C ~ 150°C (TJ) | Surface Mount | 6-MLP, Power33 | MicroFET 3x3mm |
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Diodes Incorporated |
MOSFET 2N-CH 30V 5.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock564,708 |
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Logic Level Gate | 30V | 5.7A | 24 mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | 608pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Texas Instruments |
MOSFET 2N-CH 30V 15A 5PTAB
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 8A, 8V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V
- Power - Max: 4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-LGA
- Supplier Device Package: 5-PTAB (3x2.5)
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Package: 5-LGA |
Stock339,120 |
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Logic Level Gate | 30V | 15A | 16.3 mOhm @ 8A, 8V | 1.9V @ 250µA | 5nC @ 4.5V | 564pF @ 15V | 4W | -55°C ~ 150°C (TJ) | Surface Mount | 5-LGA | 5-PTAB (3x2.5) |
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Texas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock12,138 |
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Logic Level Gate | 60V | 15A | 28 mOhm @ 5A, 10V | 3.6V @ 250µA | 9.4nC @ 10V | 741pF @ 30V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET N/P-CH 20V 4A/3.3A TSOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta)
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: - |
Request a Quote |
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- | 20V | 4A (Ta), 3.3A (Ta) | 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V | 1.2V @ 250µA, 1V @ 250µA | 10.5nC @ 10V, 6.5nC @ 4.5V | 416pF @ 10V, 536pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 40V 40A/85A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
- Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (8x5)
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Package: - |
Request a Quote |
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- | 40V | 40A (Ta), 85A (Tc) | 2.3mOhm @ 20A, 10V | 2.4V @ 250µA | 60nC @ 10V | 3350pF @ 20V | 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (8x5) |
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onsemi |
MOSFET 2N-CH 60V 10.1A 8LFPAK
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 35A (Tc)
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 30V
- Power - Max: 3.1W (Ta), 37W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: 8-LFPAK
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Package: - |
Request a Quote |
|
- | 60V | 10.1A (Ta), 35A (Tc) | 14.4mOhm @ 17A, 10V | 2.2V @ 25µA | 9.4nC @ 10V | 643pF @ 30V | 3.1W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | 8-LFPAK |
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Infineon Technologies |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock48 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild Semiconductor |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N/P-CH 20V 0.5A SOT963
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
- Power - Max: 380mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: - |
Stock26,697 |
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- | 20V | 500mA (Ta), 360mA (Ta) | 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.35nC @ 4.5V, 0.3nC @ 4.5V | 21.5pF @ 15V, 17pF @ 16V | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Diodes Incorporated |
MOSFET 2P-CH 50V 0.22A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
- Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
- Power - Max: 490mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock29,934 |
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- | 50V | 220mA (Ta) | 8Ohm @ 100mA, 5V | 2V @ 250µA | 1.2nC @ 10V | 37pF @ 25V | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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onsemi |
PCH+PCH 1.8V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
MOSFET 2N-CH 40V 5.2A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,410 |
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- | 40V | 5.2A (Ta) | 85mOhm @ 5.2A, 10V | 2.5V @ 1mA | 1.7nC @ 5V | 100pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Microchip Technology |
SIC 4N-CH 1200V/700V 317A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
- Current - Continuous Drain (Id) @ 25°C: 317A (Tc), 227A (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 12mA, 2.4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, 430nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, 9000pF @ 700V
- Power - Max: 1.253kW (Tc), 613W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV), 700V | 317A (Tc), 227A (Tc) | 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V | 2.8V @ 12mA, 2.4V @ 8mA | 928nC @ 20V, 430nC @ 20V | 12100pF @ 1000V, 9000pF @ 700V | 1.253kW (Tc), 613W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 40A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
- Power - Max: 64W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: - |
Stock4,800 |
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- | 60V | 40A (Ta) | 10mOhm @ 10A, 10V | 4V @ 1mA | 30.1nC @ 10V | 2163pF @ 25V | 64W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Infineon Technologies |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock51 |
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