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Infineon Technologies |
MOSFET N/P-CH 20V 3.7A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 246pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock30,840 |
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Logic Level Gate | 20V | 3.7A | 100 mOhm @ 3.7A, 10V | 2V @ 10µA | 11.5nC @ 10V | 246pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 8A/13A 8DFN
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 13A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
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Package: 8-PowerWDFN |
Stock5,392 |
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Logic Level Gate | 30V | 8A, 13A | 21 mOhm @ 8A, 10V | 2.3V @ 250µA | 11nC @ 10V | 710pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-DFN-EP (3.3x3.3) |
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IXYS |
MOSFET 6N-CH 40V 180A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Gull Wing |
Stock4,208 |
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Standard | 40V | 180A | - | 4V @ 1mA | 94nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Gull Wing | ISOPLUS-DIL? |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 80V 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,144 |
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Logic Level Gate | 80V | - | 200 mOhm @ 2.5A, 10V | 3V @ 250µA | 10nC @ 10V | 270pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Microsemi Corporation |
MOSFET 4N-CH 800V 28A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Power - Max: 277W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock6,080 |
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Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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IXYS |
MOSFET 2N-CH 150V 65A I4-PAC-5
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 65A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
- Supplier Device Package: ISOPLUS i4-PAC?
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Package: i4-Pac?-5 |
Stock6,064 |
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Standard | 150V | 65A | 22 mOhm @ 50A, 10V | 4V @ 1mA | 230nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock5,696 |
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Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 7.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.6A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,699,848 |
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Logic Level Gate | 20V | 7.6A | 23 mOhm @ 7.6A, 10V | 1.1V @ 250µA | 12.5nC @ 10V | 630pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V TSOT26
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
- Power - Max: 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock4,976 |
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Standard | 20V | 3.7A (Ta), 2.6A (Ta) | 35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V | 1V @ 250µA | 5.7nC @ 4.5V, 10nC @ 4.5V | 530pF @ 10V, 705pF @ 10V | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Cree/Wolfspeed |
MOSFET 2N-CH 1700V 325A MODULE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 325A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V
- Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
- Power - Max: 1760W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock7,936 |
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Standard | 1700V (1.7kV) | 325A | 10 mOhm @ 225A, 20V | 2.3V @ 15mA (Typ) | 1076nC @ 20V | 20000pF @ 1000V | 1760W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 20.7A 56LFPAK
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20.7A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 794pF @ 25V
- Power - Max: 38W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: SOT-1205, 8-LFPAK56 |
Stock5,584 |
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Standard | 60V | 20.7A | 30 mOhm @ 5A, 10V | 4V @ 1mA | 12.5nC @ 10V | 794pF @ 25V | 38W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Texas Instruments |
MOSFET 2N-CH 30V 32A 8LSON
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
- Power - Max: 12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-LSON (5x6)
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Package: 8-PowerLDFN |
Stock265,836 |
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Logic Level Gate | 30V | 32A | - | 2.1V @ 250µA | 7.7nC @ 4.5V | 1255pF @ 15V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
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Diodes Incorporated |
MOSFET N/P-CH 60V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock865,488 |
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Logic Level Gate | 60V | 3.6A, 2.6A | 55 mOhm @ 4.5A, 10V | 1V @ 250µA (Min) | 20.4nC @ 10V | 1063pF @ 30V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Package: 8-PowerVDFN |
Stock3,408 |
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Logic Level Gate | 55V | 20A | 65 mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | 410pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-10 |
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Rohm Semiconductor |
MOSFET N/P-CH 20V 0.1A VMT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
- Power - Max: 120mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: VMT6
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Package: 6-SMD, Flat Leads |
Stock63,720 |
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Logic Level Gate, 1.2V Drive | 20V | 100mA | 3.5 Ohm @ 100mA, 4.5V | 1V @ 100µA | - | 7.1pF @ 10V | 120mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | VMT6 |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 30V POWERPAIR
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
- Power - Max: 38W (Tc), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: PowerPAIR? 6x5F
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Package: 8-PowerWDFN |
Stock24,912 |
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Standard | 30V | 60A (Tc) | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V | 2.2V @ 250µA | 22nC @ 4.5V, 92nC @ 4.5V | 2000pF @ 15V, 8200pF @ 15V | 38W (Tc), 83W (Tc) | -55°C ~ 150°C (TA) | Surface Mount | 8-PowerWDFN | PowerPAIR? 6x5F |
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ON Semiconductor |
MOSFET 2P-CH 20V 4.8A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.8A
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
- Power - Max: 750mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock349,836 |
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Logic Level Gate | 20V | 4.8A | 33 mOhm @ 6.2A, 4.5V | 1.2V @ 250µA | 35nC @ 4.5V | 1700pF @ 16V | 750mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,822,496 |
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Logic Level Gate | 30V | 7A | 23 mOhm @ 7A, 10V | 2.5V @ 250µA | 13nC @ 10V | 635pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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onsemi |
PCH+PCH 2.5V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET 2N-CH 30V 23A 8PWRPAIR
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
- Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (6x5)
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Package: - |
Stock2,733 |
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- | 30V | 23A (Ta), 40A (Tc) | 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V | 2.4V @ 250µA, 2.2V @ 250µA | 22nC @ 10V, 95nC @ 10V | 1060pF @ 15V, 4320pF @ 15V | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (6x5) |
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onsemi |
SIC 2N-CH 900V 154A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
- Power - Max: 328W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 328W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 18.5A/49A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
- Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
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Package: - |
Stock21,246 |
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- | 30V | 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc) | 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V | 2.1V @ 250µA, 1.9V @ 250µA | 20nC @ 10V, 40nC @ 10V | 820pF @ 15V, 1890pF @ 15V | 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (5x6) |
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Vishay Siliconix |
MOSFET 2P-CH 30V 7.5A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
- Power - Max: 3.3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock7,425 |
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- | 30V | 7.5A (Tc) | 35mOhm @ 5.9A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1020pF @ 25V | 3.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 7A 8TSSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
- Power - Max: 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: - |
Request a Quote |
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- | 20V | 7A (Ta) | 20mOhm @ 7A, 4.5V | 1.25V @ 250µA | 14nC @ 4.5V | 660pF @ 10V | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Diodes Incorporated |
MOSFET 2N-CH 80V 28.5A POWERDI50
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 28.5A (Tc)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 40V
- Power - Max: 3.1W (Ta), 41W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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Package: - |
Stock7,500 |
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- | 80V | 28.5A (Tc) | 26mOhm @ 10A, 10V | 2.5V @ 250µA | 10.4nC @ 10V | 631pF @ 40V | 3.1W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 (Type UXD) |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 0.22A 6TSSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 30V
- Power - Max: 260mW (Ta), 1.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
Stock134,400 |
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- | 60V | 220mA (Ta) | 2.7Ohm @ 300mA, 4.5V | 900mV @ 250µA | 0.7nC @ 4.5V | 27pF @ 30V | 260mW (Ta), 1.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Microchip Technology |
SIC 4N-CH 700V 349A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
- Power - Max: 966W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 349A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 966W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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onsemi |
MOSFET 2N-CH 60V 8A/27A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
- Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
- Power - Max: 3.1W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Stock3,870 |
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- | 60V | 8A (Ta), 27A (Tc) | 20.3mOhm @ 4A, 10V | 4V @ 20µA | 5.8nC @ 10V | 355pF @ 30V | 3.1W (Ta), 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |