Page 121 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

LN100LA-G
Microchip Technology

MOSFET 2N-CH 1200V

Package: 6-VFLGA

Stock3,232
ECH8672-TL-H
ON Semiconductor

MOSFET 2P-CH 20V 3.5A ECH8

Package: 8-SMD, Flat Lead

Stock3,664
SI4814BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,224
FDY3001NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.2A SOT-563F

Package: SOT-563, SOT-666

Stock3,200
APTM50A15FT1G
Microsemi Corporation

MOSFET 2N-CH 500V 25A SP1

Package: SP1

Stock3,776
BSD340NH6327XTSA1
Infineon Technologies

SMALL SIGNAL+P-CH

Package: 6-TSSOP, SC-88, SOT-363

Stock6,816
APTM20HM10FG
Microsemi Corporation

MOSFET 4N-CH 200V 175A SP6

Package: SP6

Stock6,992
AO8814
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.5A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock13,163,304
SI1926DL-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 0.37A SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock186,012
APTM100A13SCG
Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

Package: SP6

Stock4,544
DMP3036SSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 10.6A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,992
AO4616
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8A/7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock11,284,092
EPC2106ENGRT
EPC

TRANS GAN 2N-CH 100V BUMPED DIE

Package: Die

Stock230,418
PMGD290XN,115
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.86A 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock142,200
CAS380M17HM3
Wolfspeed, Inc.

SIC 2N-CH 1700V 532A MODULE

Package: -

Stock3
FDMA2002NZ_F130
onsemi

MOSFET 2N-CH 30V 2.9A 6MICROFET

Package: -

Request a Quote
SI1967DH-T1-BE3
Vishay Siliconix

MOSFET 2P-CH 20V 1A/1.3A SC70-6

Package: -

Stock3,129
TSM680P06DPQ56
Taiwan Semiconductor Corporation

MOSFET 2P-CH 60V 12A 8DFN

Package: -

Request a Quote
NVMFD5C674NLWFT1G
onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

Package: -

Stock4,500
MCQ4828A-TP
Micro Commercial Co

MOSFET 2N-CH 60V 4.5A 8SOP

Package: -

Stock108,660

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
LN100LA-G	Microchip Technology	MOSFET 2N-CH 1200V FET Type: 2 N-Channel (Cascoded) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 3000 Ohm @ 2mA, 2.8V Vgs(th) (Max) @ Id: 1.6V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFLGA Supplier Device Package: 6-LFGA (3x3)	Package: 6-VFLGA	Stock3,232	Standard	1200V (1.2kV)	-	3000 Ohm @ 2mA, 2.8V	1.6V @ 10µA	-	50pF @ 25V	350mW	-25°C ~ 125°C (TJ)	Surface Mount	6-VFLGA	6-LFGA (3x3)
ECH8672-TL-H	ON Semiconductor	MOSFET 2P-CH 20V 3.5A ECH8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock3,664	Logic Level Gate	20V	3.5A	85 mOhm @ 1.5A, 4.5V	-	4nC @ 4.5V	320pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
SI4814BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 10A 8SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.3W, 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,224	Logic Level Gate	30V	10A, 10.5A	18 mOhm @ 10A, 10V	3V @ 250µA	10nC @ 4.5V	-	3.3W, 3.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDY3001NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 0.2A SOT-563F FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock3,200	Logic Level Gate	20V	200mA	5 Ohm @ 200mA, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
APTM50A15FT1G	Microsemi Corporation	MOSFET 2N-CH 500V 25A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock3,776	Standard	500V	25A	180 mOhm @ 21A, 10V	5V @ 1mA	170nC @ 10V	5448pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
BSD340NH6327XTSA1	Infineon Technologies	SMALL SIGNAL+P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Package: 6-TSSOP, SC-88, SOT-363	Stock6,816	-	-	-	-	-	-	-	-	-	Surface Mount	6-TSSOP, SC-88, SOT-363	PG-SOT363-6
APTM20HM10FG	Microsemi Corporation	MOSFET 4N-CH 200V 175A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Package: SP6	Stock6,992	Standard	200V	175A	12 mOhm @ 87.5A, 10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
AO8814	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7.5A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock13,163,304	Logic Level Gate	20V	-	16 mOhm @ 7.5A, 10V	1V @ 250µA	15.4nC @ 4.5V	1390pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI1926DL-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 0.37A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-3 (SOT323)	Package: 6-TSSOP, SC-88, SOT-363	Stock186,012	Logic Level Gate	60V	370mA	1.4 Ohm @ 340mA, 10V	2.5V @ 250µA	1.4nC @ 10V	18.5pF @ 30V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-3 (SOT323)
APTM100A13SCG	Microsemi Corporation	MOSFET 2N-CH 1000V 65A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Package: SP6	Stock4,544	Standard	1000V (1kV)	65A	156 mOhm @ 32.5A, 10V	5V @ 6mA	562nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
DMP3036SSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 10.6A 8-SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,992	Logic Level Gate	30V	10.6A	20 mOhm @ 9A, 10V	3V @ 250µA	16.5nC @ 10V	1931pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4616	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8A/7A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,284,092	Logic Level Gate	30V	8A, 7A	20 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EPC2106ENGRT	EPC	TRANS GAN 2N-CH 100V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: Die	Stock230,418	GaNFET (Gallium Nitride)	100V	1.7A	70 mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
PMGD290XN,115	Nexperia USA Inc.	MOSFET 2N-CH 20V 0.86A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 860mA Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V Power - Max: 410mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock142,200	Logic Level Gate	20V	860mA	350 mOhm @ 200mA, 4.5V	1.5V @ 250µA	0.72nC @ 4.5V	34pF @ 20V	410mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
CAS380M17HM3	Wolfspeed, Inc.	SIC 2N-CH 1700V 532A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 532A (Tc) Rds On (Max) @ Id, Vgs: 3.74mOhm @ 380A, 15V Vgs(th) (Max) @ Id: 3.6V @ 152mA Gate Charge (Qg) (Max) @ Vgs: 1494nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 1200V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Stock3	-	1700V (1.7kV)	532A (Tc)	3.74mOhm @ 380A, 15V	3.6V @ 152mA	1494nC @ 15V	4700pF @ 1200V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
FDMA2002NZ_F130	onsemi	MOSFET 2N-CH 30V 2.9A 6MICROFET FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 650mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	Package: -	Request a Quote	Logic Level Gate	30V	2.9A	123mOhm @ 2.9A, 4.5V	1.5V @ 250µA	3nC @ 4.5V	220pF @ 15V	650mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
SI1967DH-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 20V 1A/1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: -	Stock3,129	-	20V	1A (Ta), 1.3A (Tc)	490mOhm @ 910mA, 4.5V	1V @ 250µA	4nC @ 10V	110pF @ 10V	740mW (Ta), 1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
TSM680P06DPQ56	Taiwan Semiconductor Corporation	MOSFET 2P-CH 60V 12A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Power - Max: 3.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	Package: -	Request a Quote	-	60V	12A (Tc)	68mOhm @ 6A, 10V	2.5V @ 250µA	16.4nC @ 10V	870pF @ 30V	3.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
NVMFD5C674NLWFT1G	onsemi	MOSFET 2N-CH 60V 11A/42A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Power - Max: 3W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Stock4,500	-	60V	11A (Ta), 42A (Tc)	14.4mOhm @ 10A, 10V	2.2V @ 25µA	4.7nC @ 4.5V	640pF @ 25V	3W (Ta), 37W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
MCQ4828A-TP	Micro Commercial Co	MOSFET 2N-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 1.25W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock108,660	-	60V	4.5A (Ta)	56mOhm @ 4.5A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	1.25W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2046UVT-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V Power - Max: 590mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	20V	2.6A (Ta)	90mOhm @ 3.6A, 4.5V	1.4V @ 250µA	7.4nC @ 10V	278pF @ 10V	590mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
MMFTN620KD	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SOT-26	Package: -	Request a Quote	Logic Level Gate	60V	350mA	1.5Ohm @ 500mA, 10V	1.5V @ 250µA	1.3nC @ 10V	35pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SOT-26
BSM450D12P4G102	Rohm Semiconductor	SIC 2N-CH 1200V 447A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 447A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.8V @ 218.4mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 10V Power - Max: 1.45kW (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Stock12	-	1200V (1.2kV)	447A (Tc)	-	4.8V @ 218.4mA	-	44000pF @ 10V	1.45kW (Tc)	175°C (TJ)	Chassis Mount	Module	Module
IRF7904TRPBF-1	Infineon Technologies	MOSFET 2N-CH 30V 7.6A/11A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	Logic Level Gate	30V	7.6A, 11A	16.2mOhm @ 7.6A, 10V	2.25V @ 25µA	11nC @ 4.5V	910pF @ 15V	1.4W, 2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MSCSM120VR1M11CT6AG	Microchip Technology	SIC 2N-CH 1200V 251A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Power - Max: 1.042kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9000pF @ 1000V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
NVMFD5C462NT1G	onsemi	MOSFET 2N-CH 40V 17.6A/70A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 3.2W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Stock2,700	-	40V	17.6A (Ta), 70A (Tc)	5.4mOhm @ 25A, 10V	3.5V @ 250µA	16nC @ 10V	1020pF @ 25V	3.2W (Ta), 50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCSM70VR1M19C1AG	Microchip Technology	SIC 2N-CH 700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170AM039CD3AG	Microchip Technology	SIC 2N-CH 1700V 523A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 523A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V Vgs(th) (Max) @ Id: 3.3V @ 22.5mA Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V Power - Max: 2.4kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV)	523A (Tc)	5mOhm @ 270A, 20V	3.3V @ 22.5mA	1602nC @ 20V	29700pF @ 1000V	2.4kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-