|
|
ON Semiconductor |
MOSFET N-CH 35V 8SOIC
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock4,768 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Rohm Semiconductor |
MOSFET 2N-CH 30V 3.5A MPT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: MPT6
|
Package: 6-SMD, Flat Leads |
Stock2,912 |
|
Logic Level Gate | 30V | 3.5A | 98 mOhm @ 3.5A, 10V | 2.5V @ 1mA | 1.9nC @ 5V | 85pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MPT6 |
|
|
Microsemi Corporation |
MOSFET SIC PHASE LEG MODULE
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: Module |
Stock5,008 |
|
- | - | - | - | - | - | - | - | - | Chassis Mount | Module | Module |
|
|
Microsemi Corporation |
MOSFET 2N-CH 500V 50A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock2,640 |
|
Standard | 500V | 50A | 84 mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | 10800pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 60V 8DIP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock2,563,296 |
|
Logic Level Gate | 60V | - | 56 mOhm @ 4.7A, 10V | 3V @ 250µA | 10.5nC @ 10V | 540pF @ 30V | 2.5W | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Vishay Siliconix |
MOSFET 2P-CH 20V 0.88A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 880mA
- Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 570mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock78,300 |
|
Logic Level Gate | 20V | 880mA | 490 mOhm @ 880mA, 4.5V | 450mV @ 100µA | 1.8nC @ 4.5V | - | 570mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
|
|
Diodes Incorporated |
MOSFET 2P-CH 20V 8MSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 1.04W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-MSOP
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock30,012 |
|
Logic Level Gate | 20V | - | 270 mOhm @ 1.2A, 4.5V | 700mV @ 250µA (Min) | 5.25nC @ 4.5V | 290pF @ 15V | 1.04W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
ON Semiconductor |
MOSFET 2N-CH 20V 0.2A XLLGA6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V
- Power - Max: 125mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFLGA
- Supplier Device Package: 6-XLLGA (.90x.65)
|
Package: 6-XFLGA |
Stock4,864 |
|
Standard | 20V | 200mA | 1.5 Ohm @ 100mA, 4.5V | 1V @ 250µA | - | 12.3pF @ 15V | 125mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFLGA | 6-XLLGA (.90x.65) |
|
|
TSC America Inc. |
MOSFET, DUAL, P-CHANNEL, -30V, -
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,712 |
|
Standard | 30V | 4.9A (Ta) | 60 mOhm @ 4.9A, 10V | 3V @ 250µA | 28nC @ 10V | 745pF @ 15V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Nexperia USA Inc. |
MOSFET N/P-CH 30V 6TSSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
- Power - Max: 445mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock5,152 |
|
Logic Level Gate | 30V | 350mA, 200mA | 1.4 Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | 50pF @ 15V | 445mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Infineon Technologies |
MOSFET 2P-CH 30V 8A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock52,620 |
|
Logic Level Gate | 30V | 8A | 21 mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Vishay Siliconix |
MOSFET N/P-CH 20V 4A 1206-8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
|
Package: 8-SMD, Flat Lead |
Stock12,288 |
|
Logic Level Gate | 20V | 4A | 36 mOhm @ 6A, 4.5V | 800mV @ 250µA | 11.3nC @ 5V | 632pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
|
|
Fairchild/ON Semiconductor |
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
|
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock36,264 |
|
Logic Level Gate | 80V | 4.3A, 2.8A | 80 mOhm @ 4.3A, 10V | 4V @ 250µA | 18nC @ 10V | 800pF @ 40V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
|
|
Microchip Technology |
MOSFET ARRAY N/P-CH 200V 8VDFN
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-VDFN (6x5)
|
Package: 8-VDFN Exposed Pad |
Stock31,644 |
|
Logic Level Gate | 200V | 2A (Ta) | 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V | 2V @ 1mA, 2.4V @ 1mA | - | 110pF @ 25V, 200pF @ 25V | - | -55°C ~ 175°C | Surface Mount | 8-VDFN Exposed Pad | 8-VDFN (6x5) |
|
|
EPC |
MOSFET 3N-CH 100V 9BGA
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
|
Package: 9-VFBGA |
Stock201,390 |
|
GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) |
|
|
Texas Instruments |
MOSFET 2N-CH 20V 5A 6WSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WSON (2x2)
|
Package: 6-WDFN Exposed Pad |
Stock25,848 |
|
Logic Level Gate, 5V Drive | 20V | 5A | 27 mOhm @ 5A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 469pF @ 10V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) |
|
|
Diodes Incorporated |
MOSFET 2N-CH 20V 0.3A 6-DFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 300mA
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 900mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 400mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: X2-DFN1310-6
|
Package: 6-SMD, No Lead |
Stock470,640 |
|
Standard | 20V | 300mA | 1.5 Ohm @ 10mA, 4V | 900mV @ 100µA | - | - | 400mW | -65°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | X2-DFN1310-6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.8A UF6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: UF6
|
Package: - |
Stock3,504 |
|
Logic Level Gate, 1.2V Drive | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
|
|
Rohm Semiconductor |
MOSFET 2N-CH 100V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock4,629 |
|
- | 100V | 4.5A (Ta) | 58mOhm @ 4.5A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 50V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Microchip Technology |
SIC 2N-CH 700V 241A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
- Power - Max: 690W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Stock30 |
|
- | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 6A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
- | 30V | 6A (Ta) | 30mOhm @ 6A, 10V | 2.4V @ 250µA | 6.3nC @ 10V | 310pF @ 15V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
onsemi |
MOSFET 2N-CH 40V 14A/49A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Power - Max: 3W (Ta), 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
|
Package: - |
Stock1,800 |
|
- | 40V | 14A (Ta), 49A (Tc) | 8.1mOhm @ 15A, 10V | 3.5V @ 250µA | 11nC @ 10V | 650pF @ 25V | 3W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
|
Comchip Technology |
MOSFET 2N-CH 20V 7A 4CSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.5W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: CSPB1515-4
|
Package: - |
Request a Quote |
|
- | 20V | 7A (Ta) | 26mOhm @ 3A, 4.5V | 1.3V @ 250µA | 11nC @ 10V | - | 1.5W (Ta) | 150°C | Surface Mount | 4-SMD, No Lead | CSPB1515-4 |
|
|
onsemi |
MOSFET 2N-CH 30V 7A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
Logic Level Gate | 30V | 7A | 23mOhm @ 7A, 10V | 2.5V @ 250µA | 13nC @ 10V | 635pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Vishay Siliconix |
MOSFET 2N-CH 40V 123A PPAK SO-8L
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
- Power - Max: 93W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8L Dual BWL
|
Package: - |
Request a Quote |
|
- | 40V | 123A (Tc) | 3.4mOhm @ 7A, 10V | 3.5V @ 250µA | 56nC @ 10V | 3143pF @ 25V | 93W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8L Dual BWL |
|
|
Diodes Incorporated |
MOSFET 2P-CH 50V 0.22A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
- Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
- Power - Max: 490mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Request a Quote |
|
- | 50V | 220mA (Ta) | 8Ohm @ 100mA, 5V | 2V @ 250µA | 1.2nC @ 10V | 37pF @ 25V | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 12V 25A 10DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-AlphaDFN (3.01x1.52)
|
Package: - |
Request a Quote |
|
- | 12V | 25A (Ta) | 3.8mOhm @ 5A, 4.5V | 1.1V @ 250µA | 32nC @ 4.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 10-SMD, No Lead | 10-AlphaDFN (3.01x1.52) |
|
|
Sanyo |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |