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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 8A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,008 |
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Standard | 30V | 8A | 19 mOhm @ 8A, 10V | 2.4V @ 250µA | 18nC @ 10V | 888pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Trinamic Motion Control GmbH |
MOSFET N/P-CH 30V 8PQFN
- FET Type: N and P-Channel, Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.3A, 5.3A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (3x3)
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Package: 8-PowerTDFN |
Stock6,864 |
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Standard | 30V | 7.3A, 5.3A | 30 mOhm @ 4A, 10V | 3V @ 250µA | 7.2nC @ 4.5V | 400pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3x3) |
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Vishay Siliconix |
MOSFET 2N-CH 40V 6A PPAK 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
- Power - Max: 17.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
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Package: PowerPAK? 1212-8 Dual |
Stock6,528 |
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Standard | 40V | 6A | 42 mOhm @ 5.7A, 10V | 1.6V @ 250µA | 29nC @ 10V | 700pF @ 20V | 17.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
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Vishay Siliconix |
MOSFET 2N-CH 40V 6.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6.6A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock10,092 |
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Standard | 40V | 6.6A | 39 mOhm @ 5A, 10V | 2.2V @ 250µA | 22nC @ 10V | 625pF @ 20V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.7A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock955,176 |
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Logic Level Gate | 30V | 5.7A | 22 mOhm @ 7.5A, 10V | 3V @ 250µA | 11nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 6.5A BGA
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 18-WFBGA
- Supplier Device Package: 18-BGA (2.5x4)
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Package: 18-WFBGA |
Stock5,360 |
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Logic Level Gate | 20V | 6.5A | 28 mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 21nC @ 4.5V | 1430pF @ 10V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 18-WFBGA | 18-BGA (2.5x4) |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Package: 8-PowerVDFN |
Stock6,736 |
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Logic Level Gate | 100V | 20A | 35 mOhm @ 17A, 10V | 2.1V @ 16µA | 17.4nC @ 10V | 1105pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-10 |
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Vishay Siliconix |
MOSFET 2P-CH 30V 1.8A 6-TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A
- Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock453,612 |
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Logic Level Gate | 30V | 1.8A | 133 mOhm @ 2.2A, 10V | 3V @ 250µA | 5nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Vishay Siliconix |
MOSFET 2N-CH 8V 4.5A SC-70
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 4V
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock5,552 |
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Logic Level Gate | 8V | 4.5A | 27 mOhm @ 5.3A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 470pF @ 4V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Depletion Mode
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V
- Vgs(th) (Max) @ Id: 1.26V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock6,336 |
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Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Micro Commercial Co |
MOSFET N/P-CH 12V 6A/4.1A
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A, 4.1A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: DFN2020-6U
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Package: 6-VDFN Exposed Pad |
Stock3,248 |
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Standard | 12V | 6A, 4.1A | 24 mOhm @ 6A, 10V | 1V @ 250µA | 12nC @ 10V | 630pF @ 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | DFN2020-6U |
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ON Semiconductor |
MOSFET 2N-CH 30V 0.35A MCPH6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 350mA
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-MCPH
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Package: 6-SMD, Flat Leads |
Stock23,376 |
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Logic Level Gate | 30V | 350mA | 3.7 Ohm @ 80mA, 4V | - | 1.58nC @ 10V | 7pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 6-MCPH |
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Infineon Technologies |
MOSFET 2N-CH 20V 6.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.6A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,108,992 |
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Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock963,480 |
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Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 20V SC-89
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock457,200 |
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Logic Level Gate | 20V | 180mA, 145mA | 5 Ohm @ 200mA, 4.5V | 400mV @ 250µA (Min) | 0.75nC @ 4.5V | - | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Wolfspeed, Inc. |
SIC 6N-CH 1200V 40A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
- Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock132 |
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- | 1200V (1.2kV) | 40A (Tj) | 42.6mOhm @ 30A, 15V | 3.6V @ 11.5mA | 118nC @ 15V | 3400pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Taiwan Semiconductor Corporation |
MOSFET 2N-CH 40V 14A/34A 8PDFNU
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
- Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
- Power - Max: 55.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFNU (5x6)
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Package: - |
Stock14,970 |
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- | 40V | 14A (Ta), 34A (Tc) | 7.6mOhm @ 17A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | 1344pF @ 25V | 55.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFNU (5x6) |
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Vishay Siliconix |
MOSFET 2N-CH 60V 20A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
- Power - Max: 27W (Tc), 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
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Package: - |
Stock17,100 |
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- | 60V | 20A (Tc), 54A (Tc) | 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V | 3.5V @ 250µA | 16nC @ 10V, 32nC @ 10V | 1000pF @ 25V, 2100pF @ 25V | 27W (Tc), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual Asymmetric |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 3.8A 6TSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
- Power - Max: 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: - |
Request a Quote |
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- | 30V | 3.8A (Ta) | 50mOhm @ 3.8A, 10V | 1.5V @ 250µA | 16nC @ 10V | 340pF @ 15V | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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SemiQ |
SIC 1200V 10M MOSFET HALF-BRIDGE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
- Power - Max: 577W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock30 |
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- | 1200V (1.2kV) | 173A (Tc) | 14mOhm @ 100A, 20V | 4V @ 40mA | 483nC @ 20V | 13800pF @ 800V | 577W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Diodes Incorporated |
MOSFET 2P-CH 50V 0.13A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
- Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
- Power - Max: 150mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Request a Quote |
|
- | 50V | 130mA (Ta) | 10Ohm @ 100mA, 5V | 2V @ 1mA | - | 45pF @ 25V | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Sanyo |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET 2P-CH 20V 3.8A 6UDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: - |
Stock225,333 |
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- | 20V | 3.8A (Ta) | 75mOhm @ 2.9A, 4.5V | 1.4V @ 250µA | 8.8nC @ 4.5V | 642pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.25A ES6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock10,455 |
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Logic Level Gate | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT563 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Request a Quote |
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- | 60V | 450mA (Ta) | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.8nC @ 4.5V | 41pF @ 30V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Panjit International Inc. |
MOSFET 2N-CH 60V 0.115A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
- Power - Max: 200mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock78,792 |
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- | 60V | 115mA (Ta) | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.8nC @ 4.5V | 35pF @ 25V | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Renesas Electronics Corporation |
MOSFET 2N-CH 60V 16A 8HSON
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
- Power - Max: 1W (Ta), 25W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-HSON (5x5.4)
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Package: - |
Stock12,930 |
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- | 60V | 16A (Tc) | 39mOhm @ 8A, 10V | 2.5V @ 250µA | 17nC @ 10V | 750pF @ 25V | 1W (Ta), 25W (Tc) | 175°C | Surface Mount | 8-PowerLDFN | 8-HSON (5x5.4) |
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Renesas Electronics Corporation |
MOSFET 2N-CH 40V 30A 8HSON
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Power - Max: 1W (Ta), 59W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-HSON (5x5.4)
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Package: - |
Stock14,970 |
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- | 40V | 30A (Tc) | 8mOhm @ 15A, 10V | 4V @ 250µA | 41nC @ 10V | 2400pF @ 25V | 1W (Ta), 59W (Tc) | 175°C | Surface Mount | 8-PowerLDFN | 8-HSON (5x5.4) |