Page 183 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

FW276-TL-2H
ON Semiconductor

MOSFET 2N-CH 450V 0.7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,960
2N7002DWA-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock38,400
EFC4618R-TR
ON Semiconductor

MOSFET 2N-CH EFCP1818

Package: 4-XBGA, 4-FCBGA

Stock65,568
SI4923DY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 6.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,352
TPCF8304(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 3.2A VS-8

Package: 8-SMD, Flat Lead

Stock22,584
NTMD6P02R2SG
ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock11,028
FDW2512NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock150,540
PMWD19UN,518
NXP

MOSFET 2N-CH 30V 5.6A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock7,936
APTML602U12R020T3AG
Microsemi Corporation

MOSFET 2N-CH 600V 45A SP3

Package: SP3

Stock4,816
SQJ951EP-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK

Package: PowerPAK? SO-8 Dual

Stock7,504
BUK7K8R7-40EX
Nexperia USA Inc.

MOSFET 2N-CH 40V 30A 56LFPAK

Package: SOT-1205, 8-LFPAK56

Stock3,408
SP8K5FU6TB
Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock18,096
TSM6963SDCA RVG
TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock36,000
ALD310704SCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

Package: 16-SOIC (0.154", 3.90mm Width)

Stock6,240
SI4830CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,400
DMT3009LDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 30A V-DFN3030-8

Package: 8-VDFN Exposed Pad

Stock2,976
DMG9926UDM-7
Diodes Incorporated

MOSFET 2N-CH 20V 4.2A SOT-26

Package: SOT-23-6

Stock3,840
EM6M2T2R
Rohm Semiconductor

MOSFET N/P-CH 20V 0.2A EMT6

Package: SOT-563, SOT-666

Stock1,647,552
G220P03D32
Goford Semiconductor

MOSFET P+P-CH 30V12A 30W DFN3*3-

Package: -

Stock15,000
SSM5P15FU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A USV

Package: -

Stock8,376

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FW276-TL-2H	ON Semiconductor	MOSFET 2N-CH 450V 0.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 700mA Rds On (Max) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 20V Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,960	Logic Level Gate	450V	700mA	12.1 Ohm @ 350mA, 10V	4.5V @ 1mA	3.7nC @ 10V	55pF @ 20V	1.6W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2N7002DWA-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock38,400	Logic Level Gate	60V	180mA	6 Ohm @ 115mA, 10V	2.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
EFC4618R-TR	ON Semiconductor	MOSFET 2N-CH EFCP1818 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XBGA, 4-FCBGA Supplier Device Package: EFCP1818-4CC-037	Package: 4-XBGA, 4-FCBGA	Stock65,568	Standard	-	-	-	-	-	-	1.6W	150°C (TJ)	Surface Mount	4-XBGA, 4-FCBGA	EFCP1818-4CC-037
SI4923DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 6.2A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,352	Logic Level Gate	30V	6.2A	21 mOhm @ 8.3A, 10V	3V @ 250µA	70nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TPCF8304(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 3.2A VS-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	Package: 8-SMD, Flat Lead	Stock22,584	Logic Level Gate	30V	3.2A	72 mOhm @ 1.6A, 10V	1.2V @ 1mA	14nC @ 10V	600pF @ 10V	330mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	VS-8 (2.9x1.5)
NTMD6P02R2SG	ON Semiconductor	MOSFET 2P-CH 20V 4.8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,028	Logic Level Gate	20V	4.8A	33 mOhm @ 6.2A, 4.5V	1.2V @ 250µA	35nC @ 4.5V	1700pF @ 16V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDW2512NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock150,540	Logic Level Gate	20V	6A	28 mOhm @ 6A, 4.5V	1.5V @ 250µA	12nC @ 4.5V	670pF @ 10V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PMWD19UN,518	NXP	MOSFET 2N-CH 30V 5.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock7,936	Logic Level Gate	30V	5.6A	23 mOhm @ 3.5A, 4.5V	700mV @ 1mA	28nC @ 5V	1478pF @ 10V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTML602U12R020T3AG	Microsemi Corporation	MOSFET 2N-CH 600V 45A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock4,816	Standard	600V	45A	150 mOhm @ 22.5A, 10V	4V @ 2.5mA	-	7600pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SQJ951EP-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 30A PPAK FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Power - Max: 56W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock7,504	Standard	30V	30A	17 mOhm @ 7.5A, 10V	2.5V @ 250µA	50nC @ 10V	1680pF @ 10V	56W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
BUK7K8R7-40EX	Nexperia USA Inc.	MOSFET 2N-CH 40V 30A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: SOT-1205, 8-LFPAK56	Stock3,408	Standard	40V	30A	8.5 mOhm @ 15A, 10V	4V @ 1mA	21.8nC @ 10V	1439pF @ 25V	53W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SP8K5FU6TB	Rohm Semiconductor	MOSFET 2N-CH 30V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock18,096	Logic Level Gate	30V	3.5A	83 mOhm @ 3.5A, 10V	2.5V @ 1mA	3.5nC @ 5V	140pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TSM6963SDCA RVG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -20V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 5V Power - Max: 1.14W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock36,000	Standard	20V	4.5A (Tc)	30 mOhm @ 4.5A, 4.5V	1V @ 250µA	20nC @ 4.5V	1500pF @ 5V	1.14W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
ALD310704SCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.154", 3.90mm Width)	Stock6,240	Standard	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SI4830CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,400	Logic Level Gate	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMT3009LDT-7	Diodes Incorporated	MOSFET 2N-CH 30V 30A V-DFN3030-8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: V-DFN3030-8 (Type K)	Package: 8-VDFN Exposed Pad	Stock2,976	Standard	30V	30A	11.1 mOhm @ 14.4A, 10V	3V @ 250µA	20nC @ 15V	1500pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	V-DFN3030-8 (Type K)
DMG9926UDM-7	Diodes Incorporated	MOSFET 2N-CH 20V 4.2A SOT-26 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V Power - Max: 980mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: SOT-23-6	Stock3,840	Logic Level Gate	20V	4.2A	28 mOhm @ 8.2A, 4.5V	900mV @ 250µA	8.3nC @ 4.5V	856pF @ 10V	980mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
EM6M2T2R	Rohm Semiconductor	MOSFET N/P-CH 20V 0.2A EMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: SOT-563, SOT-666	Stock1,647,552	Logic Level Gate	20V	200mA	1 Ohm @ 200mA, 4V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
G220P03D32	Goford Semiconductor	MOSFET P+P-CH 30V12A 30W DFN3*3- FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V Power - Max: 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (3.15x3.05) Dual	Package: -	Stock15,000	-	30V	12A (Tc)	22mOhm @ 3A, 10V	2V @ 250µA	25nC @ 10V	1305pF @ 15V	30W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (3.15x3.05) Dual
SSM5P15FU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 0.1A USV FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	Package: -	Stock8,376	-	30V	100mA (Ta)	12Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	200mW (Ta)	150°C	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
SCH2817-TL-E	onsemi	NCH+SBD 1.8V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CMS25NN03V8-HF	Comchip Technology	MOSFET 2N-CH 30V 25A 8DFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V Power - Max: 1.7W (Ta), 20.8W (Tc) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)	Package: -	Request a Quote	-	30V	25A	20mOhm @ 10A, 10V	2.5V @ 250µA	7.2nC @ 4.5V	572pF @ 15V	1.7W (Ta), 20.8W (Tc)	-55°C ~ 150°C	Surface Mount	8-PowerWDFN	8-PDFN (SPR-PAK ) (3.3x3.3)
SSM6P35AFU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.25A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 285mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Stock17,970	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.4Ohm @ 150mA, 4.5V	1V @ 100µA	-	42pF @ 10V	285mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SIA907EDJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V SMD FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMT35M8LDG-7	Diodes Incorporated	MOSFET 2N-CH 30V 17A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Power - Max: 980mW (Ta), 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type G)	Package: -	Stock6,000	-	30V	17A (Ta), 15.3A (Ta)	4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V	1.9V @ 250µA	22.7nC @ 10V, 16.3nC @ 10V	1510pF @ 15V, 1032pF @ 15V	980mW (Ta), 2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type G)
FF4MR20KM1HPHPSA1	Infineon Technologies	SIC 2N-CH 2000V AG-62MMHB FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	Package: -	Stock30	-	2000V (2kV)	280A (Tc)	5.3mOhm @ 300A, 18V	5.15V @ 168mA	1170nC @ 18V	36100pF @ 1.2kV	-	-40°C ~ 175°C	Chassis Mount	Module	AG-62MMHB
DMN31D5UDJ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: -	Stock20,487	-	30V	220mA (Ta)	1.5Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
MMFTN620KDW	Diotec Semiconductor	MOSFET SOT363 N+N 60V 0.35A 2OHM FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: SOT-363	Package: -	Request a Quote	-	-	350mA	-	-	-	-	-	-	Surface Mount	-	SOT-363