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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 6.3µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,848 |
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Logic Level Gate | 30V | 1.5A | 140 mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock182,868 |
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Standard | 30V | 5.8A, 4.3A | 45 mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 200V 104A SP4
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 104A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock4,016 |
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Standard | 200V | 104A | 19 mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Infineon Technologies |
MOSFET 2N-CH 100V 2.3A 8PQFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-PQFN (3.3x3.3), Power33
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Package: 8-PowerVDFN |
Stock167,280 |
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Standard | 100V | 2.3A | 195 mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (3.3x3.3), Power33 |
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Microsemi Corporation |
MOSFET 4N-CH 1200V 219A SP6C
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 219A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
- Power - Max: 925W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,992 |
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Standard | 1200V (1.2kV) | 219A | 12 mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 6N-CH 800V 28A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
- Power - Max: 277W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock7,952 |
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Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Vishay Siliconix |
MOSFET 2N-CH 20V 5.4A 10-MFP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-UFBGA, CSPBGA
- Supplier Device Package: 10-Micro Foot? CSP (2x5)
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Package: 10-UFBGA, CSPBGA |
Stock8,088 |
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Logic Level Gate | 20V | 5.4A | - | 1V @ 1.1mA | - | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 10-UFBGA, CSPBGA | 10-Micro Foot? CSP (2x5) |
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Rohm Semiconductor |
MOSFET 2P-CH 12V 4.5A TSMT8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V
- Power - Max: 550mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock4,912 |
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Logic Level Gate, 1.5V Drive | 12V | 4.5A | 29 mOhm @ 4.5A, 4.5V | 1V @ 1mA | 40nC @ 4.5V | 4200pF @ 6V | 550mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8.5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A
- Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock466,284 |
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Standard | 30V | 8.5A | 23.5 mOhm @ 7A, 10V | 2.5V @ 250µA | 23nC @ 10V | 785pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Micro Commercial Co |
MOSFET 2N-CH 60V 0.115A SOT-363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,256 |
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Standard | 60V | 115mA | 7.5 Ohm @ 50mA, 5V | 2V @ 250µA | - | 50pF @ 25V | 200mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC
- FET Type: 2 P-Channel (Dual) Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
- Vgs(th) (Max) @ Id: 1.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,368 |
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Standard | 10.6V | - | 270 Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
- Power - Max: 41W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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Package: 8-PowerVDFN |
Stock6,416 |
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Logic Level Gate | 40V | 20A | 11.6 mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-10 |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,159,248 |
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Logic Level Gate | 30V | 6A | 30 mOhm @ 6A, 10V | 2.5V @ 1mA | 10.1nC @ 5V | 520pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
- Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
- Power - Max: 1.4W, 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock219,264 |
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Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Panasonic Electronic Components |
MOSFET 2N-CH 60V 0.1A SMINI6-F3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: SMini6-F3-B
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Package: 6-SMD, Flat Leads |
Stock24,312 |
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Logic Level Gate | 60V | 100mA | 12 Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 12pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SMini6-F3-B |
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Vishay Siliconix |
MOSFET 2P-CH 12V 6.7A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.7A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock246,120 |
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Logic Level Gate | 12V | 6.7A | 18 mOhm @ 8.9A, 4.5V | 1V @ 350µA | 52nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
- Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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- | 20V | 10A (Ta), 12A (Ta) | 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V, 23nC @ 4.5V | 900pF @ 10V, 1860pF @ 10V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
MOSFET 2N-CH 30V 3.6A PQFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Power - Max: 1.5W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-PQFN (2x2)
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Package: - |
Request a Quote |
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Logic Level Gate | 30V | 3.6A | 63mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V | 1.5W | - | Surface Mount | 6-VDFN Exposed Pad | 6-PQFN (2x2) |
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Harris Corporation |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT563 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
- Power - Max: 480mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Request a Quote |
|
- | 50V | 480mA (Ta) | 2Ohm @ 50mA, 5V | 1V @ 250µA | 1.5nC @ 10V | 39pF @ 25V | 480mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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onsemi |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N/P-CH 20V 1.066A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V
- Power - Max: 330mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock18,000 |
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- | 20V | 1.066A (Ta), 845mA (Ta) | 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V | 1V @ 250µA | 736.6nC @ 4.5V, 0.62nC @ 4.5V | 60.67pF @ 10V, 59.76pF @ 16V | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Diodes Incorporated |
MOSFET N/P-CH 30V 5.3A 6UDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: - |
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- | 30V | 5.3A (Ta), 3.4A (Ta) | 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V | 2V @ 250µA, 2.1V @ 250µA | 10.6nC @ 10V, 7.8nC @ 10V | 500pF @ 15V, 336pF @ 25V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Panjit International Inc. |
MOSFET N/P-CH 20V 4.1A SOT23-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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- | 20V | 4.1A (Ta), 3.1A (Ta) | 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V | 1.2V @ 250µA | 4.6nC @ 4.5V, 5.4nC @ 4.5V | 350pF @ 10V, 416pF @ 10V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 17A POWERDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXD)
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- | 30V | 17A (Tc) | 22mOhm @ 11A, 10V | 1.8V @ 250µA | 13.9nC @ 10V | 903pF @ 15V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXD) |
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Diodes Incorporated |
MOSFET 2N-CH 60V 9.4A PWRDI50
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
- Power - Max: 2.4W (Ta), 7.9W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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- | 60V | 9.4A (Ta), 17.1A (Tc) | 18mOhm @ 10A, 10V | 2.5V @ 250µA | 15.7nC @ 10V | 808pF @ 30V | 2.4W (Ta), 7.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 (Type UXD) |
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Diodes Incorporated |
MOSFET 2N-CH 30V 3.4A TSOT23-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
- Power - Max: 1.08W (Ta)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-23-6
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- | 30V | 3.4A (Ta) | - | - | 6.6nC @ 10V | 278pF @ 15V | 1.08W (Ta) | - | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-23-6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 22V 30A 10DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 22V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-AlphaDFN (3.4x1.96)
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- | 22V | 30A | 2.8mOhm @ 5A, 4.5V | 1.25V @ 250µA | 37nC @ 4.5V | - | 3.1W | -55°C ~ 150°C | Surface Mount | 10-SMD, No Lead | 10-AlphaDFN (3.4x1.96) |