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Vishay Siliconix |
MOSFET 2P-CH 20V 4.2A 1212-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.2A
- Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
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Package: PowerPAK? 1212-8 Dual |
Stock328,704 |
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Logic Level Gate | 20V | 4.2A | 51 mOhm @ 5.7A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
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Microsemi Corporation |
MOSFET 2N-CH 100V 70A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,728 |
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Standard | 100V | 70A | 21 mOhm @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | 5100pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,096 |
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Logic Level Gate | 30V | 5.7A | 22 mOhm @ 7.5A, 10V | 800mV @ 250µA (Min) | 20nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 30V/8V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 8V
- Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,320 |
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Logic Level Gate | 30V, 8V | 6A, 3.8A | 18 mOhm @ 7.8A, 10V | 1.8V @ 250µA | 20nC @ 5V | - | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 9A 8SOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Power - Max: 450mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,968 |
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Logic Level Gate | 30V | 9A | 17 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 40V 9A DFN5X6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerSMD, Flat Leads |
Stock7,200 |
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Logic Level Gate | 40V | 9A | 11.3 mOhm @ 10A, 10V | 2.7V @ 250µA | 33nC @ 10V | 1950pF @ 20V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | 8-DFN (5x6) |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A SOP8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock688,152 |
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Logic Level Gate | 30V | 5A, 4.5A | 42 mOhm @ 5A, 10V | 2.5V @ 1mA | 4nC @ 5V | 250pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Texas Instruments |
MOSFET 2N-CH 30V 5A 6WSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 32.4 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WSON (2x2)
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Package: 6-WDFN Exposed Pad |
Stock5,104 |
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Standard | 30V | 5A | 32.4 mOhm @ 4A, 10V | 2V @ 250µA | 6nC @ 10V | 353pF @ 15V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) |
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ON Semiconductor |
MOSFET 2N-CH 20V 6A EMH8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V
- Power - Max: 1.4W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-EMH
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Package: 8-SMD, Flat Lead |
Stock60,720 |
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Logic Level Gate | 20V | 6A | 25 mOhm @ 3A, 4.5V | - | 6.3nC @ 4.5V | 580pF @ 10V | 1.4W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 6A/8.5A 8MLP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 700mW, 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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Package: 8-PowerWDFN |
Stock423,984 |
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Logic Level Gate | 30V | 6A, 8.5A | 20 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 660pF @ 15V | 700mW, 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
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Panasonic Electronic Components |
MOSFET 2N-CH 20V 0.1A SSMINI-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 3V
- Power - Max: 125mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SSMINI6-F1
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Package: SOT-563, SOT-666 |
Stock131,880 |
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Logic Level Gate | 20V | 100mA | 4 Ohm @ 10mA, 4V | 1.3V @ 50µA | - | 10pF @ 3V | 125mW | 125°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSMINI6-F1 |
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Diodes Incorporated |
MOSFET N/P-CH 12V/20V 6UDFN
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V, 20V
- Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
- Power - Max: 1.36W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock127,494 |
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Standard | 12V, 20V | 6A, 3.4A | 25 mOhm @ 5.2A, 4.5V | 1V @ 250µA | 18.5nC @ 8V | 787pF @ 6V | 1.36W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 4A UDFN6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-µDFN(2x2)
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Package: 6-WDFN Exposed Pad |
Stock13,344 |
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Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-µDFN(2x2) |
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Vishay Siliconix |
MOSFET 2N-CH 60V 0.37A SC-70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 370mA
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
- Power - Max: 510mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock161,292 |
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Logic Level Gate | 60V | 370mA | 1.4 Ohm @ 340mA, 10V | 2.5V @ 250µA | 1.4nC @ 10V | 18.5pF @ 30V | 510mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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Micro Commercial Co |
MOSFET 2P-CH 50V 0.16A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 160mA
- Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Power - Max: 450mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock26,970 |
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- | 50V | 160mA | 8Ohm @ 100mA, 10V | 2V @ 250µA | - | 30pF @ 25V | 450mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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onsemi |
MOSFET 2N-CH 60V 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock4,500 |
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Logic Level Gate | 60V | - | 90mOhm @ 3.8A, 10V | 3V @ 250µA | 11.2nC @ 10V | 330pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
MOSFET 2N-CH 30V 6A 8DSO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: - |
Stock45,426 |
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Logic Level Gate | 30V | 6A | 22mOhm @ 7.7A, 10V | 2.1V @ 250µA | 10nC @ 10V | 800pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Panjit International Inc. |
MOSFET 2P-CH 20V 1.5A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: DFN2020-8
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Package: - |
Request a Quote |
|
- | 20V | 1.5A (Ta) | 325mOhm @ 1.5A, 4.5V | 1V @ 250µA | 2.2nC @ 4.5V | 150pF @ 10V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | DFN2020-8 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.25A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
- Power - Max: 285mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Stock14,265 |
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- | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 285mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 20A POWERDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
- Power - Max: 2.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
|
Package: - |
Request a Quote |
|
- | 30V | 20A (Tc) | 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V | 2.1V @ 250µA, 1.15V @ 250µA | 6.1nC @ 4.5V, 12.6nC @ 4.5V | 850pF @ 15V, 1480pF @ 15V | 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) |
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Sanyo |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
SIC 900V 8D MOSFET V-SSDC SPC
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 200mA
- Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V
- Power - Max: 1kW (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SSDC39
|
Package: - |
Request a Quote |
|
- | 900V | 620A (Tj) | 2.1mOhm @ 620A, 18V | 4.3V @ 200mA | 2400nC @ 18V | 45000pF @ 400V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SSDC39 |
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Wolfspeed, Inc. |
SIC 2N-CH 1200V 228A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 43mA
- Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 228A (Tc) | 10.4mOhm @ 175A, 15V | 3.6V @ 43mA | 422nC @ 15V | 12900pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - |
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onsemi |
MOSFET 2N-CH 60V 0.295A SC88
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
- Power - Max: 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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Package: - |
Stock43,410 |
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- | 60V | 295mA (Ta) | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.9nC @ 4.5V | 26pF @ 20V | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.35A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
- Power - Max: 320mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock9,000 |
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- | 60V | 350mA (Ta) | 2Ohm @ 100mA, 4.5V | 1.1V @ 250µA | 0.5nC @ 4.5V | 32pF @ 30V | 320mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Rohm Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock14,688 |
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- | 100V | 3A (Ta), 2.5A (Ta) | 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V | 2.5V @ 1mA | 8.5nC @ 5V, 12.5nC @ 5V | 610pF @ 25V, 1550pF @ 25V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
BSS FAMILY SOT563 T&R 3K
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 238mA (Ta)
- Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Request a Quote |
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- | 60V | 238mA (Ta) | 8Ohm @ 100mA, 5V | 2.1V @ 250µA | 0.6nC @ 5V | 42pF @ 30V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Infineon Technologies |
SIC 4N-CH 1200V AG-EASY3B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
- Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
- Vgs(th) (Max) @ Id: 5.15V @ 224mA
- Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY3B
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Package: - |
Stock27 |
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- | 1200V (1.2kV) | 400A (Tj) | 2.27mOhm @ 400A, 18V | 5.15V @ 224mA | 1600nC @ 18V | 48400pF @ 800V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | AG-EASY3B |