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ON Semiconductor |
MOSFET N-CH DUAL 6CSP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock3,504 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET 2N-CH 20V 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock414,252 |
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Logic Level Gate | 20V | - | 30 mOhm @ 5.2A, 4.5V | 600mV @ 250µA (Min) | 25nC @ 4.5V | - | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET 2P-CH 30V 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock85,152 |
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Logic Level Gate | 30V | - | 45 mOhm @ 3.5A, 10V | 1V @ 250µA (Min) | 30nC @ 10V | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET 2N-CH 75V 3.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,784 |
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Logic Level Gate | 75V | 3.6A | 48 mOhm @ 4.8A, 10V | 3V @ 250µA | 21nC @ 10V | - | 1.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 5.2A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,256 |
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Logic Level Gate | 20V | 5.2A | 50 mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,736 |
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Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-DFN2020-6
- FET Type: 2 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock4,688 |
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Standard | - | 4.5A (Ta) | 50 mOhm @ 2A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V | 752pF @ 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 40V SO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
- Power - Max: 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock2,064 |
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Standard | 40V | 30A (Tc) | 9.5 mOhm @ 10A, 10V | 3.5V @ 250µA | 30nC @ 10V | 1500pF @ 25V | 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Advanced Linear Devices Inc. |
QUAD P-CHANNEL EPAD MATCHED PAIR
- FET Type: 4 P-Channel, Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 180mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock4,304 |
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Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
- Vgs(th) (Max) @ Id: 20mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,024 |
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Standard | 10.6V | - | 500 Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock24,000 |
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Logic Level Gate | 30V | 4.9A | 58 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
- Power - Max: 41W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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Package: 8-PowerVDFN |
Stock5,728 |
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Logic Level Gate | 40V | 20A | 11.6 mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 16A/18A 8-PQFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 16A, 18A
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 13V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
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Package: 8-PowerTDFN |
Stock7,296 |
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Logic Level Gate | 25V | 16A, 18A | 5.8 mOhm @ 16A, 10V | 2.5V @ 250µA | 27nC @ 10V | 1765pF @ 13V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 25V SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA, 140mA
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock402,000 |
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Logic Level Gate | 25V | 220mA, 140mA | 4 Ohm @ 220mA, 4.5V | 1.5V @ 250µA | 0.4nC @ 4.5V | 9.5pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 2.5A/2A SSOT6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock86,856 |
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Logic Level Gate | 30V | 2.5A, 2A | 95 mOhm @ 2.5A, 10V | 3V @ 250µA | 6.6nC @ 10V | 282pF @ 15V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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onsemi |
MOSFET 2N-CH 24V 25A 10WLCSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.5W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-WLCSP (3.2x2.1)
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Package: - |
Request a Quote |
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- | 24V | 25A | - | - | 49nC @ 4.5V | - | 2.5W | - | Surface Mount | 10-SMD, No Lead | 10-WLCSP (3.2x2.1) |
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onsemi |
MOSFET 2N-CH 25V 15A/30A 8PQFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V, 4120pF @ 13V
- Power - Max: 2.2W (Ta), 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (5x6)
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Package: - |
Request a Quote |
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- | 25V | 15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc) | 5.6mOhm @ 15A, 10V | 3V @ 250µA, 3V @ 1mA | 27nC @ 10V, 64nC @ 10V | 1680pF @ 13V, 4120pF @ 13V | 2.2W (Ta), 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) |
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Diodes Incorporated |
MOSFET 2N-CH 12V 17A X4-DSN2112
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: X4-DSN2112-6
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Package: - |
Request a Quote |
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- | 12V | 17A (Ta) | 5.9mOhm @ 5A, 4.5V | 1.3V @ 1mA | 24nC @ 4.5V | - | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | X4-DSN2112-6 |
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Wolfspeed, Inc. |
SIC 2N-CH 1200V 182A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 46mA
- Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock15 |
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- | 1200V (1.2kV) | 182A (Tj) | 10.4mOhm @ 150A, 15V | 3.6V @ 46mA | 472nC @ 15V | 13600pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Microchip Technology |
SIC 2N-CH 1700V 353A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
- Power - Max: 1.642kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock6 |
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- | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | 19800pF @ 1000V | 1.642kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Fairchild Semiconductor |
MOSFET 2N-CH 12V 3.5A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
|
Logic Level Gate | 12V | 3.5A (Ta) | 50mOhm @ 3.5A, 5V | 2V @ 250µA | 25nC @ 10V | 750pF @ 10V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Good-Ark Semiconductor |
MOSFET N/P-CH 12V 5A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V
- Power - Max: 1.9W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN (2x2)
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Package: - |
Stock24,000 |
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- | 12V | 5A (Ta) | 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V | 1V @ 250µA | 6.6nC @ 4.5V, 9.2nC @ 4.5V | 495pF @ 6V, 520pF @ 6V | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-DFN (2x2) |
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STMicroelectronics |
SIC 4N-CH 1200V 50A ACEPACK1
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 4.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 147nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 800V
- Power - Max: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK 1
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 50A | 34mOhm @ 50A, 18V | 4.9V @ 5mA | 147nC @ 18V | 3500pF @ 800V | - | 175°C (TJ) | Chassis Mount | Module | ACEPACK 1 |
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Sanyo |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
MOSFET 4.5A
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | 4.5A | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
100V 4A, DUAL NCH+NCH, TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock9,000 |
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- | 100V | 4A (Ta) | 56mOhm @ 4A, 10V | 2.5V @ 1mA | 6.7nC @ 10V | 305pF @ 50V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Panjit International Inc. |
30V DUAL P-CHANNEL ENHANCEMENT M
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
- Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
- Power - Max: 2.5W (Ta), 30W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: DFN5060B-8
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Package: - |
Stock9,000 |
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- | 30V | 9A (Ta), 31A (Tc) | 19.1mOhm @ 10A, 10V | 2.5V @ 250µA | 22nC @ 10V | 1012pF @ 25V | 2.5W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | DFN5060B-8 |
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Diodes Incorporated |
MOSFET 2N-CH 11A/35A POWERDI50
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type S)
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Package: - |
Request a Quote |
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- | - | 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc) | 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V | 3V @ 250µA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 (Type S) |