Page 188 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AUIRF7303Q
Infineon Technologies

MOSFET 2N-CH 30V 5.3A 8SOIC

Package: 8-SOIC

Stock75,660
IRF7328TR
Infineon Technologies

MOSFET 2P-CH 30V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock90,480
APTM100A46FT1G
Microsemi Corporation

MOSFET 2N-CH 1000V 19A SP1

Package: SP1

Stock3,504
NTHD3100CT3G
ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

Package: 8-SMD, Flat Lead

Stock3,232
MMDF2P02HDR2
ON Semiconductor

MOSFET 2P-CH 20V 3.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock17,700
SI4963BDY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.9A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock13,248
NTLGD3502NT2G
ON Semiconductor

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

Package: 6-VDFN Exposed Pad

Stock4,384
SI4804CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock458,940
DMN65D8LDWQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 180MA SOT363

Package: -

Stock6,288
NTJD4105CT2G
ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock965,544
SIA975DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC-70-6

Package: PowerPAK? SC-70-6 Dual

Stock3,506,892
DMC2700UDM-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT26

Package: SOT-23-6

Stock434,568
SI5902BDC-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

Package: 8-SMD, Flat Lead

Stock29,172
SI3552DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,052,244
EPC2108
EPC

MOSFET 3N-CH 60V/100V 9BGA

Package: 9-VFBGA

Stock207,576
IRF7389PBF
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,080
ZXMHC10A07T8TA
Diodes Incorporated

MOSFET 2N/2P-CH 100V 1A/0.8A SM8

Package: SOT-223-8

Stock28,740
SI7949DP-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 60V 3.2A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock25,356
NTMD6N03R2G
ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock655,488
IRF7316TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,422,492

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7303Q	Infineon Technologies	MOSFET 2N-CH 30V 5.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	Package: 8-SOIC	Stock75,660	Logic Level Gate	30V	5.3A	50 mOhm @ 2.7A, 10V	3V @ 100µA	21nC @ 10V	515pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SO
IRF7328TR	Infineon Technologies	MOSFET 2P-CH 30V 8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock90,480	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.5V @ 250µA	78nC @ 10V	2675pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM100A46FT1G	Microsemi Corporation	MOSFET 2N-CH 1000V 19A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 19A Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock3,504	Standard	1000V (1kV)	19A	552 mOhm @ 16A, 10V	5V @ 2.5mA	260nC @ 10V	6800pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
NTHD3100CT3G	ON Semiconductor	MOSFET N/P-CH 20V CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	Package: 8-SMD, Flat Lead	Stock3,232	Logic Level Gate	20V	2.9A, 3.2A	80 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	2.3nC @ 4.5V	165pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
MMDF2P02HDR2	ON Semiconductor	MOSFET 2P-CH 20V 3.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock17,700	Logic Level Gate	20V	3.3A	160 mOhm @ 2A, 10V	2V @ 250µA	20nC @ 10V	588pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI4963BDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock13,248	Logic Level Gate	20V	4.9A	32 mOhm @ 6.5A, 4.5V	1.4V @ 250µA	21nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTLGD3502NT2G	ON Semiconductor	MOSFET 2N-CH 20V 4.3A/3.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.74W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (3x3)	Package: 6-VDFN Exposed Pad	Stock4,384	Logic Level Gate	20V	4.3A, 3.6A	60 mOhm @ 4.3A, 4.5V	2V @ 250µA	4nC @ 4.5V	480pF @ 10V	1.74W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-DFN (3x3)
SI4804CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock458,940	Standard	30V	8A	22 mOhm @ 7.5A, 10V	2.4V @ 250µA	23nC @ 10V	865pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN65D8LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 180MA SOT363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock6,288	-	-	-	-	-	-	-	-	-	-	-	-
NTJD4105CT2G	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock965,544	Logic Level Gate	20V, 8V	630mA, 775mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
SIA975DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.5A SC-70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 41 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock3,506,892	Logic Level Gate	12V	4.5A	41 mOhm @ 4.3A, 4.5V	1V @ 250µA	26nC @ 8V	1500pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMC2700UDM-7	Diodes Incorporated	MOSFET N/P-CH 20V SOT26 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Power - Max: 1.12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: SOT-23-6	Stock434,568	Logic Level Gate	20V	1.34A, 1.14A	400 mOhm @ 600mA, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 16V	1.12W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
SI5902BDC-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 3.12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	Package: 8-SMD, Flat Lead	Stock29,172	Logic Level Gate	30V	4A (Tc)	65 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	220pF @ 15V	3.12W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI3552DV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,052,244	Logic Level Gate	30V	-	105 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.2nC @ 5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
EPC2108	EPC	MOSFET 3N-CH 60V/100V 9BGA FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	Package: 9-VFBGA	Stock207,576	GaNFET (Gallium Nitride)	60V, 100V	1.7A, 500mA	190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.22nC @ 5V, 0.044nC @ 5V	22pF @ 30V, 7pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)
IRF7389PBF	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,080	Logic Level Gate	30V	-	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMHC10A07T8TA	Diodes Incorporated	MOSFET 2N/2P-CH 100V 1A/0.8A SM8 FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A, 800mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	Package: SOT-223-8	Stock28,740	Standard	100V	1A, 800mA	700 mOhm @ 1.5A, 10V	4V @ 250µA	2.9nC @ 10V	138pF @ 60V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
SI7949DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 3.2A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock25,356	Logic Level Gate	60V	3.2A	64 mOhm @ 5A, 10V	3V @ 250µA	40nC @ 10V	-	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTMD6N03R2G	ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Power - Max: 1.29W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock655,488	Logic Level Gate	30V	6A	32 mOhm @ 6A, 10V	2.5V @ 250µA	30nC @ 10V	950pF @ 24V	1.29W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRF7316TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,422,492	Logic Level Gate	30V	4.9A	58 mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4842	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,717,896	Logic Level Gate	30V	-	22 mOhm @ 7.5A, 10V	2.6V @ 250µA	11nC @ 10V	448pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
QS5K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 2A TSMT5 FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSMT5	Package: SOT-23-5 Thin, TSOT-23-5	Stock36,000	Logic Level Gate	30V	2A	100 mOhm @ 2A, 4.5V	1.5V @ 1mA	3.9nC @ 4.5V	175pF @ 10V	1.25W	150°C (TJ)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSMT5
SIZ322DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Power - Max: 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	Package: -	Stock26,130	-	25V	30A (Tc)	6.35mOhm @ 15A, 10V	2.4V @ 250µA	20.1nC @ 10V	950pF @ 12.5V	16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
DMN33D8LDWQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.25A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	30V	250mA (Ta)	2.4Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NXH020P120MNF1PG	onsemi	SIC 2N-CH 1200V 51A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V Power - Max: 119W (Tj) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	2420pF @ 800V	119W (Tj)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
NVMFD6H846NLT1G	onsemi	MOSFET 2N-CH 80V 9.4A/31A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Power - Max: 3.2W (Ta), 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Stock8,790	-	80V	9.4A (Ta), 31A (Tc)	15mOhm @ 5A, 10V	2V @ 21µA	17nC @ 10V	900pF @ 40V	3.2W (Ta), 34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
STD1056T4	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK9K13-40HX	Nexperia USA Inc.	MOSFET 2N-CH 40V 42A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power - Max: 46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock8,925	Logic Level Gate	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D