|
|
Infineon Technologies |
MOSFET N/P-CH 100V 2.1A 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
- Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock263,940 |
|
Standard | 100V | 2.1A, 1.5A | 210 mOhm @ 2.1A, 10V | 4V @ 250µA | 28nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Vishay Siliconix |
MOSFET 2P-CH 12V 6A 8PWRPAK
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V
- Power - Max: 8.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? ChipFET? Dual
- Supplier Device Package: PowerPAK? ChipFet Dual
|
Package: PowerPAK? ChipFET? Dual |
Stock2,064 |
|
Logic Level Gate | 12V | 6A | 64 mOhm @ 3.6A, 4.5V | 1V @ 250µA | 15nC @ 8V | 460pF @ 6V | 8.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFET? Dual | PowerPAK? ChipFet Dual |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 3A MICROFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: MicroFET 2x2 Thin
|
Package: 6-UFDFN Exposed Pad |
Stock5,552 |
|
Logic Level Gate | 20V | 3A | 120 mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | 435pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | MicroFET 2x2 Thin |
|
|
Diodes Incorporated |
MOSFET 2N-CH 50V 0.28A SOT-563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 280mA
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 150mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock6,928 |
|
Logic Level Gate | 50V | 280mA | 3 Ohm @ 200mA, 2.7V | 1.2V @ 250µA | - | 50pF @ 25V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Microsemi Corporation |
MOSFET 6N-CH 75V 120A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
- Power - Max: 138W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
|
Package: SP6 |
Stock4,048 |
|
Standard | 75V | 120A | 4.5 mOhm @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | 4530pF @ 25V | 138W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
|
|
Vishay Siliconix |
MOSFET 2P-CH 20V 2.6A SC75-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.6A
- Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-75-6L Dual
- Supplier Device Package: PowerPAK? SC-75-6L Dual
|
Package: PowerPAK? SC-75-6L Dual |
Stock6,336 |
|
Standard | 20V | 2.6A | 295 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4nC @ 8V | 115pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-75-6L Dual | PowerPAK? SC-75-6L Dual |
|
|
Vishay Siliconix |
MOSFET 2N-CH 40V 6A 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
- Power - Max: 17.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
|
Package: PowerPAK? 1212-8 Dual |
Stock308,088 |
|
Standard | 40V | 6A | 42 mOhm @ 5.7A, 10V | 1.6V @ 250µA | 29nC @ 10V | 700pF @ 20V | 17.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 8A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1455pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,376 |
|
Logic Level Gate | 20V | 8A | 17 mOhm @ 8A, 4.5V | 1.5V @ 250µA | 20nC @ 4.5V | 1455pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
STMicroelectronics |
MOSFET 2N-CH 30V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock440,076 |
|
Logic Level Gate | 30V | 8A | 22 mOhm @ 4A, 10V | 1V @ 250µA | 10nC @ 4.5V | 857pF @ 25V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Rohm Semiconductor |
MOSFET 2P-CH 30V 7A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,400 |
|
Logic Level Gate | 30V | 7A | 29 mOhm @ 7A, 10V | 2.5V @ 1mA | 18nC @ 5V | 1200pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 11A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock400,596 |
|
Logic Level Gate | 30V | 11A | 10.5 mOhm @ 11A, 10V | 2.5V @ 250µA | 15nC @ 10V | 605pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V 0.25A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Power - Max: 310mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,784 |
|
Standard | 60V | 250mA | 2 Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.3nC @ 4.5V | 30pF @ 25V | 310mW | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2N-CH 100V 1.2A 6-SSOT
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.2A
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
- Power - Max: 690mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock311,916 |
|
Standard | 100V | 1.2A | 350 mOhm @ 1.2A, 10V | 4V @ 250µA | 2nC @ 10V | 70pF @ 50V | 690mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
|
|
Diodes Incorporated |
MOSFET N/P-CH 40V 7A/5.1A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,040 |
|
Logic Level Gate | 40V | 7A, 5.1A | 24 mOhm @ 6A, 10V | 3V @ 250µA | 19.1nC @ 10V | 1060pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Rohm Semiconductor |
MOSFET 2P-CH 20V 1A TUMT6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: TUMT6
|
Package: 6-SMD, Flat Leads |
Stock144,000 |
|
Logic Level Gate | 20V | 1A | 390 mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | 150pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
- Vgs(th) (Max) @ Id: 1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
Package: 8-DIP (0.300", 7.62mm) |
Stock8,340 |
|
Standard | 10.6V | - | 75 Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
NTE Electronics, Inc |
MOSFET 3N/3P-CH
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | 500mW | -55°C ~ 125°C | - | - | - |
|
|
Diodes Incorporated |
MOSFET 2N-CH 20V 4.6A TSOT26
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
|
Package: - |
Request a Quote |
|
- | 20V | 4.6A (Ta) | 35mOhm @ 5A, 4.5V | 1V @ 250µA | 3.6nC @ 4.5V | 369pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
|
|
onsemi |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 20V 3.4A 6TSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.5A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: - |
Request a Quote |
|
Logic Level Gate | 20V | 3.4A, 2.5A | 60mOhm @ 3.4A, 4.5V | 1V @ 250µA | 3.8nC @ 4.5V | 320pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Rohm Semiconductor |
MOSFET N/P-CH 20V EMT6
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Rohm Semiconductor |
MOSFET 2P-CH 20V EMT6
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Rohm Semiconductor |
MOSFET 2N-CH 40V 6.5A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
|
Package: - |
Stock54,453 |
|
- | 40V | 6.5A (Ta) | 46mOhm @ 6.5A, 10V | 2.5V @ 10µA | 2.6nC @ 10V | 195pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
|
|
Renesas Electronics Corporation |
MOSFET P-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Rohm Semiconductor |
MOSFET N/P-CH 40V 4.5A/5A TSMT8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
|
Package: - |
Stock11,883 |
|
- | 40V | 4.5A (Ta), 5A (Ta) | 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V | 2.5V @ 1mA | 3.5nC @ 10V, 17.2nC @ 10V | 150pF @ 20V, 920pF @ 20V | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
|
|
onsemi |
PCH+NCH 4V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
STMicroelectronics |
MOSFET 2N-CH 40V 18A POWERFLAT
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
- Power - Max: 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFlat™ (5x6)
|
Package: - |
Request a Quote |
|
- | 40V | 18A (Tc) | 16mOhm @ 6A, 10V | 2.5V @ 250µA | 9.4nC @ 10V | 500pF @ 25V | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) |
|
|
Goford Semiconductor |
MOSFET 2P-CH 30V 5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
- Power - Max: 1.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock5,202 |
|
- | 30V | 5A (Tc) | 45mOhm @ 5A, 10V | 3V @ 250µA | 11nC @ 10V | 520pF @ 15V | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |