|
|
Infineon Technologies |
MOSFET 2P-CH 12V 7.8A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7.8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,888 |
|
Logic Level Gate | 12V | 7.8A | 24 mOhm @ 7.8A, 4.5V | 900mV @ 250µA | 33nC @ 4.5V | 2020pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 4.6A 8-TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock2,480 |
|
Logic Level Gate | 30V | 4.6A | 30 mOhm @ 4.6A, 10V | 2V @ 250µA | 9nC @ 4.5V | 861pF @ 25V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Trinamic Motion Control GmbH |
MOSFET N/P-CH 40V 8PQFN
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8.8A, 7.3A
- Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
- Power - Max: 3.57W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PQFN (5x6)
|
Package: 8-PowerTDFN |
Stock7,120 |
|
Standard | 40V | 8.8A, 7.3A | 26.5 mOhm @ 7A, 10V | 3V @ 250µA | 11.2nC @ 4.5V | 1050pF @ 15V | 3.57W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) |
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 5.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W, 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,472 |
|
Logic Level Gate | 30V | 5.3A, 7A | 22 mOhm @ 6.3A, 10V | 800mV @ 250µA (Min) | 12nC @ 5V | - | 1W, 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Vishay Siliconix |
MOSFET 2P-CH 20V 0.41A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 410mA
- Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 270mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock252,012 |
|
Logic Level Gate | 20V | 410mA | 995 mOhm @ 410mA, 4.5V | 1.5V @ 250µA | 1.8nC @ 4.5V | - | 270mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
|
|
Microsemi Corporation |
MOSFET 2N-CH 200V 175A SP4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 175A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
|
Package: SP4 |
Stock4,592 |
|
Standard | 200V | 175A | 12 mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi Corporation |
MOSFET 2N-CH 200V 175A SP6
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 175A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
|
Package: SP6 |
Stock3,920 |
|
Standard | 200V | 175A | 12 mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
|
|
NXP |
MOSFET 2N-CH 20V 11.6A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 11.6A
- Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
- Power - Max: 4.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,008 |
|
Logic Level Gate | 20V | 11.6A | 18.5 mOhm @ 5A, 4.5V | 700mV @ 1mA | 22.2nC @ 4.5V | 1450pF @ 16V | 4.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
|
|
Infineon Technologies |
MOSFET 2N-CH 8TDSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
- Power - Max: 41W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
|
Package: 8-PowerVDFN |
Stock6,432 |
|
Standard | 40V | 20A | 12.2 mOhm @ 17A, 10V | 4V @ 15µA | 18nC @ 10V | 1470pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-10 |
|
|
Microsemi Corporation |
MOSFET 3N-CH 600V 49A SP1
- FET Type: 3 N Channel (Phase Leg + Boost Chopper)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 49A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock4,752 |
|
Standard | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
IXYS |
MOSFET 6N-CH 40V 180A 17-SMD
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Gull Wing
- Supplier Device Package: ISOPLUS-DIL?
|
Package: 17-SMD, Gull Wing |
Stock6,064 |
|
Standard | 40V | 180A | 2.5 mOhm @ 100A, 10V | 4.5V @ 1mA | 110nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Gull Wing | ISOPLUS-DIL? |
|
|
Rohm Semiconductor |
MOSFET 2N-CH 45V 6A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,784 |
|
Logic Level Gate | 45V | 6A | 25 mOhm @ 6A, 10V | 2.5V @ 1mA | 21.6nC @ 5V | 1400pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Diodes Incorporated |
MOSFET N/P-CH 30V 5.5A/5.8A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,664 |
|
Logic Level Gate | 30V | 5.5A, 5.8A | 27 mOhm @ 6A, 10V | 3V @ 250µA | 13.2nC @ 10V | 641pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Diodes Incorporated |
MOSFET N/P-CH 20V SOT563
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
- Power - Max: 450mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock2,896 |
|
Standard | 20V | 1.03A, 700mA | 480 mOhm @ 200mA, 5V | 900mV @ 250µA | 0.5nC @ 4.5V | 37.1pF @ 10V | 450mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Nexperia USA Inc. |
NX138AKS/SOT363/SC-88
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,400 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Siliconix |
MOSFET N/P-CH POWERPAK8
- FET Type: N and P-Channel
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12A, 9A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
- Power - Max: 3.5W
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
|
Package: PowerPAK? SO-8 Dual |
Stock6,576 |
|
- | 20V | 12A, 9A | 28 mOhm @ 12A, 10V | 1.4V @ 250µA | 48nC @ 10V | 1310pF @ 10V | 3.5W | -55°C ~ 150°C | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
|
|
Vishay Siliconix |
MOSFET ARRAY 2N-CH 30V SC70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
|
Package: PowerPAK? SC-70-6 Dual |
Stock4,768 |
|
Standard | 30V | 4.5A (Tc) | 25 mOhm @ 5A, 10V | 2.2V @ 250µA | 4.5nC @ 4.5V | 490pF @ 15V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
|
|
Diodes Incorporated |
MOSFET N/P-CH 20V TSOT26
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock30,000 |
|
Logic Level Gate | 20V | 3.7A, 2.6A | 35 mOhm @ 4A, 4.5V | 1V @ 250µA | 17nC @ 10V | 530pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
|
|
Infineon Technologies |
MOSFET 2N-CH 40V 20A TDSON-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
|
Package: 8-PowerVDFN |
Stock45,006 |
|
Standard | 40V | 20A | 7.6 mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V 6.9A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock59,400 |
|
Logic Level Gate | 30V | 6.9A | 22 mOhm @ 6.9A, 10V | 3V @ 250µA | 40nC @ 10V | 1360pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Diodes Incorporated |
MOSFET 2N-CH 30V 10A 8SO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
- Power - Max: 1.42W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: - |
Stock44,619 |
|
- | 30V | 10A (Ta) | 21mOhm @ 8.5A, 10V | 3V @ 250µA | 5nC @ 4.5V | 478.9pF @ 16V | 1.42W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Vishay Siliconix |
MOSFET N/P-CH 40V 30A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
- Power - Max: 34W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
|
Package: - |
Stock26,688 |
|
- | 40V | 30A (Tc) | 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V | 2.5V @ 250µA | 30nC @ 10V, 85nC @ 10V | 1900pF @ 25V, 4600pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 24V 8A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 12V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-DFN (3x3)
|
Package: - |
Request a Quote |
|
- | 24V | 8A (Ta) | 8.9mOhm @ 8A, 4.5V | 1.3V @ 250µA | 20nC @ 4.5V | 1325pF @ 12V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-DFN (3x3) |
|
|
Wolfspeed, Inc. |
SIC 2N-CH 1700V 916A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 916A (Tc)
- Rds On (Max) @ Id, Vgs: 1.86mOhm @ 650A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 305mA
- Gate Charge (Qg) (Max) @ Vgs: 2988nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 97300pF @ 1200V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
Package: - |
Stock3 |
|
- | 1700V (1.7kV) | 916A (Tc) | 1.86mOhm @ 650A, 15V | 3.6V @ 305mA | 2988nC @ 15V | 97300pF @ 1200V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
|
|
Diodes Incorporated |
MOSFET 2N-CH 40V 79A POWERDI50
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
- Power - Max: 3W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
|
Package: - |
Stock1,815 |
|
- | 40V | 79A (Tc) | 5.5mOhm @ 25A, 10V | 2.3V @ 250µA | 13.9nC @ 10V | 978pF @ 20V | 3W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 (Type UXD) |
|
|
Vishay Siliconix |
MOSFET 2N-CH 40V 30A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
- Power - Max: 34W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
|
Package: - |
Stock2,190 |
|
- | 40V | 30A (Tc) | 8mOhm @ 8A, 10V | 2.2V @ 250µA | 40nC @ 10V | 2100pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
|
|
Diodes Incorporated |
MOSFET N/P-CH 20V 4.6A 6UDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
- Power - Max: 820mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
|
Package: - |
Request a Quote |
|
- | 20V | 4.6A (Ta), 3.1A (Ta) | 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V | 1V @ 250µA | 7.7nC @ 10V, 12.7nC @ 8V | 369pF @ 10V, 440pF @ 10V | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
|
|
onsemi |
MOSFET N-CH 40V LFPAK56
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |