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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH DUAL 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,928 |
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Standard | 30V | 7.1A (Ta) | 25 mOhm @ 7A, 10V | 2.5V @ 250µA | 19nC @ 10V | 1250pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2N-CH 20V 7.5A ECH8
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
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Package: 8-SMD, Flat Lead |
Stock306,408 |
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- | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 4WLCSP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-UFBGA, WLCSP
- Supplier Device Package: 4-WLCSP (1.57x1.57)
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Package: 4-UFBGA, WLCSP |
Stock3,552 |
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Logic Level Gate | - | - | - | - | 9.1nC @ 4.5V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLCSP | 4-WLCSP (1.57x1.57) |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 7A 8TSSOP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock47,280 |
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Logic Level Gate | 30V | - | 18 mOhm @ 7A, 10V | 1.5V @ 250µA | 14nC @ 4.5V | 1060pF @ 15V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET 2P-CH 30V 8A PPAK SO-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
- Power - Max: 55W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock7,296 |
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Logic Level Gate | 30V | 8A | 24 mOhm @ 9A, 10V | 2.5V @ 250µA | 55nC @ 10V | 1800pF @ 10V | 55W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Infineon Technologies |
MOSFET 2N-CH 30V 17A/32A TISON8
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A, 32A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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Package: 8-PowerTDFN |
Stock5,408 |
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Logic Level Gate, 4.5V Drive | 30V | 17A, 32A | 5 mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 4.5V | 1160pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 7A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
- Power - Max: 2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock293,808 |
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Logic Level Gate | 30V | 7A | 28 mOhm @ 7A, 10V | 2.5V @ 1mA | 25nC @ 5V | 2600pF @ 10V | 2W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI506
- FET Type: 2 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
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Package: 8-PowerTDFN |
Stock4,960 |
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Standard | - | 26A (Tc) | 48 mOhm @ 5A, 10V | 3V @ 250µA | 14.5nC @ 4.5V | 1525pF @ 30V | - | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 3.5A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock30,000 |
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Logic Level Gate | 30V | 3.5A | 90 mOhm @ 3.5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 490pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
MOSFET 2P-CH 60V 2.5A VEC8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 137 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: SOT-28FL/VEC8
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Package: 8-SMD, Flat Lead |
Stock4,032 |
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Logic Level Gate, 4V Drive | 60V | 2.5A | 137 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 11nC @ 10V | 420pF @ 20V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | SOT-28FL/VEC8 |
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ON Semiconductor |
MOSFET 2N-CH EFCP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.6W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA
- Supplier Device Package: 6-EFCP (1.9x1.46)
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Package: 6-XFBGA |
Stock7,424 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | 29nC @ 4.5V | - | 1.6W | 150°C (TJ) | Surface Mount | 6-XFBGA | 6-EFCP (1.9x1.46) |
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Texas Instruments |
MOSFET 2N-CH 25V 40A 8SON
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V
- Power - Max: 13W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-LSON (5x6)
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Package: 8-PowerLDFN |
Stock289,596 |
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Logic Level Gate | 25V | 40A | 6 mOhm @ 20A, 8V | 2.1V @ 250µA | 10.7nC @ 4.5V | 1870pF @ 12.5V | 13W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
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Skyworks Solutions Inc. |
MOSFET 8SOP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock20,280 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.28A SOT-563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 150mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock2,133,000 |
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Standard | 60V | 280mA | 7.5 Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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ON Semiconductor |
MOSFET 2N-CH 40V 7.4A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.4A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock61,620 |
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Logic Level Gate | 40V | 7.4A | 25 mOhm @ 7A, 10V | 3V @ 250µA | 17nC @ 10V | 785pF @ 20V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET N/P-CH 30V 8.5A/7A 8SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,360 |
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Logic Level Gate | 30V | 8.5A, 7A | 21 mOhm @ 7A, 10V | 2.1V @ 250µA | 16.1nC @ 10V | 767pF @ 10V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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EPC |
TRANS GAN SYM HALF BRDG 80V
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 23A
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
Package: Die |
Stock46,464 |
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GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | Surface Mount | Die | Die |
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Sanyo |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N/P-CH 20V 0.5A SOT963
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
- Power - Max: 380mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
|
Package: - |
Stock29,715 |
|
- | 20V | 500mA (Ta), 360mA (Ta) | 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.35nC @ 4.5V, 0.3nC @ 4.5V | 21.5pF @ 15V, 17pF @ 16V | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Vishay Siliconix |
MOSFET 2N-CH 60V 7A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
- Power - Max: 4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Stock32,814 |
|
- | 60V | 7A (Tc) | 40mOhm @ 4.5A, 10V | 2.5V @ 250µA | 22nC @ 10V | 865pF @ 25V | 4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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onsemi |
MOSFET 2N-CH 60V 5.1A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Power - Max: 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
Logic Level Gate | 60V | 5.1A (Tc) | 49mOhm @ 5.1A, 10V | 3V @ 250µA | 23nC @ 10V | 620pF @ 25V | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET 2N-CH 20V 6.2A 8TSSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
- Power - Max: 890mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
Package: - |
Stock7,470 |
|
- | 20V | 6.2A (Ta), 15.2A (Tc) | 24mOhm @ 6.5A, 4.5V | 950mV @ 250µA | 0.9nC @ 10V | 647pF @ 10V | 890mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Comchip Technology |
MOSFET 2N-CH 20V 13A 6CSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: CSPB2718-6
|
Package: - |
Request a Quote |
|
- | 20V | 13A (Ta) | 11.5mOhm @ 3A, 4.5V | 1.3V @ 1mA | 25.4nC @ 10V | - | 2W (Ta) | 150°C | Surface Mount | 6-SMD, No Lead | CSPB2718-6 |
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Micro Commercial Co |
MOSFET N/P-CH 20V 0.75A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
- Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V
- Power - Max: 150mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Request a Quote |
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Logic Level Gate | 20V | 750mA, 600mA | 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 0.8nC @ 4.5V, 0.86nC @ 4.5V | 33pF @ 16V, 40pF @ 16V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Goford Semiconductor |
MOSFET 100V 8A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- Power - Max: 3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock10,500 |
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- | 100V | 8A (Tc) | 130mOhm @ 2A, 10V | 3V @ 250µA | 15.5nC @ 10V | 690pF @ 25V | 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Fairchild Semiconductor |
MOSFET 2N-CH 25V 13A PWRCLIP-33
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, 3456pF @ 13V
- Power - Max: 800mW (Ta), 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: Powerclip-33
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Package: - |
Request a Quote |
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- | 25V | 13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc) | 7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V | 2.2V @ 250µA, 2.2V @ 1mA | 8nC @ 4.5V, 25nC @ 4.5V | 1075pF @ 13V, 3456pF @ 13V | 800mW (Ta), 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Powerclip-33 |
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onsemi |
MOSFET N-CH 12V 2.2MOHM WLCSP10
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Micro Commercial Co |
MOSFET N/P-CH 20V 1.2A SOT23-6L
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A, 1A
- Rds On (Max) @ Id, Vgs: 300mOhm @ 650mA, 4.5V, 850mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, 0.86nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, 40pF @ 16V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
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Package: - |
Request a Quote |
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Logic Level Gate | 20V | 1.2A, 1A | 300mOhm @ 650mA, 4.5V, 850mOhm @ 1A, 4.5V | 1.1V @ 250µA | 0.8nC @ 4.5V, 0.86nC @ 4.5V | 33pF @ 16V, 40pF @ 16V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L |