Page 201 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF7751
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock34,716
SI4942DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock105,588
GWM220-004P3-SL SAM
IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

Package: 17-SMD, Flat Leads

Stock2,336
SI1025X-T1-E3
Vishay Siliconix

MOSFET 2P-CH 60V 0.19A SOT563F

Package: SOT-563, SOT-666

Stock3,029,664
VHM40-06P1
IXYS

MOSFET 2N-CH 600V 38A ECO-PAC2

Package: ECO-PAC2

Stock7,008
ALD1103SBL
Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14SOIC

Package: 14-SOIC (0.154", 3.90mm Width)

Stock6,360
SI9926CDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,409,876
HP8KA1TB
Rohm Semiconductor

MOSFET 2N-CH 30V 14A HSOP8

Package: 8-PowerTDFN

Stock5,056
FDC6302P
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.12A SSOT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock37,920
QH8MA2TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A/3A TSMT8

Package: 8-SMD, Flat Lead

Stock7,248
DMN5010VAK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

Package: SOT-563, SOT-666

Stock36,000
APTM100H45SCTG
Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP4

Package: SP4

Stock5,776
SI5517DU-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

Package: PowerPAK? ChipFET? Dual

Stock7,704
SIA922EDJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.5A SC70-6

Package: PowerPAK? SC-70-6 Dual

Stock144,000
PJT138L_R1_00001
Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT363

Package: -

Stock13,044
DMN52D0UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

Package: -

Request a Quote
NTTBC070NP10M5L
onsemi

MOSFET N/P-CH 100V 3.5A 8WDFN

Package: -

Stock8,028
PJQ5866A_R2_00001
Panjit International Inc.

MOSFET 2N-CH 60V 7A/40A 8DFN

Package: -

Stock8,184
DMN2024UDH-7
Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8DFN

Package: -

Request a Quote
G120N03D32
Goford Semiconductor

MOSFET 2N-CH 30V 28A 8DFN

Package: -

Stock14,985

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7751	Infineon Technologies	MOSFET 2P-CH 30V 4.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock34,716	Logic Level Gate	30V	4.5A	35 mOhm @ 4.5A, 10V	2.5V @ 250µA	44nC @ 10V	1464pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4942DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock105,588	Logic Level Gate	40V	5.3A	21 mOhm @ 7.4A, 10V	3V @ 250µA	32nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
GWM220-004P3-SL SAM	IXYS	MOSFET 6N-CH 40V 180A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Flat Leads	Stock2,336	Standard	40V	180A	-	4V @ 1mA	94nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
SI1025X-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 0.19A SOT563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 190mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock3,029,664	Logic Level Gate	60V	190mA	4 Ohm @ 500mA, 10V	3V @ 250µA	1.7nC @ 15V	23pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
VHM40-06P1	IXYS	MOSFET 2N-CH 600V 38A ECO-PAC2 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	Package: ECO-PAC2	Stock7,008	Standard	600V	38A	70 mOhm @ 25A, 10V	5.5V @ 3mA	220nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC2	ECO-PAC2
ALD1103SBL	Advanced Linear Devices Inc.	MOSFET 2N/2P-CH 10.6V 14SOIC FET Type: 2 N and 2 P-Channel Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	Package: 14-SOIC (0.154", 3.90mm Width)	Stock6,360	Standard	10.6V	40mA, 16mA	75 Ohm @ 5V	1V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
SI9926CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,409,876	Logic Level Gate	20V	8A	18 mOhm @ 8.3A, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
HP8KA1TB	Rohm Semiconductor	MOSFET 2N-CH 30V 14A HSOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: 8-PowerTDFN	Stock5,056	Logic Level Gate	30V	14A	5 mOhm @ 14A, 10V	2.5V @ 10mA	24nC @ 4.5V	2550pF @ 15V	3W	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
FDC6302P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.12A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 120mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock37,920	Logic Level Gate	25V	120mA	10 Ohm @ 200mA, 4.5V	1.5V @ 250µA	0.31nC @ 4.5V	11pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
QH8MA2TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 4.5A/3A TSMT8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: 8-SMD, Flat Lead	Stock7,248	Logic Level Gate	30V	4.5A, 3A	35 mOhm @ 4.5A, 10V	2.5V @ 1mA	8.4nC @ 10V	365pF @ 10V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
DMN5010VAK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock36,000	Logic Level Gate	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
APTM100H45SCTG	Microsemi Corporation	MOSFET 4N-CH 1000V 18A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Package: SP4	Stock5,776	Standard	1000V (1kV)	18A	540 mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SI5517DU-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 8.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	Package: PowerPAK? ChipFET? Dual	Stock7,704	Logic Level Gate	20V	6A	39 mOhm @ 4.4A, 4.5V	1V @ 250µA	16nC @ 8V	520pF @ 10V	8.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
SIA922EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock144,000	Logic Level Gate	30V	4.5A	64 mOhm @ 3A, 4.5V	1.4V @ 250µA	12nC @ 10V	-	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
PJT138L_R1_00001	Panjit International Inc.	MOSFET 2N-CH 60V 0.2A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock13,044	-	60V	200mA (Ta)	4.2Ohm @ 200mA, 10V	1.5V @ 250µA	0.7nC @ 4.5V	15pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN52D0UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
NTTBC070NP10M5L	onsemi	MOSFET N/P-CH 100V 3.5A 8WDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3x3)	Package: -	Stock8,028	-	100V	3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)	70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V	3V @ 24µA, 4V @ 40µA	5.6nC @ 10V, 7.3nC @ 10V	252pF @ 50V, 256pF @ 50V	1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (3x3)
PJQ5866A_R2_00001	Panjit International Inc.	MOSFET 2N-CH 60V 7A/40A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V Power - Max: 1.7W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	Package: -	Stock8,184	-	60V	7A (Ta), 40A (Tc)	17mOhm @ 20A, 10V	2.5V @ 250µA	13.5nC @ 4.5V	1574pF @ 25V	1.7W (Ta), 56W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
DMN2024UDH-7	Diodes Incorporated	MOSFET 2N-CH 20V 5.2A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 950mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	Package: -	Request a Quote	-	20V	5.2A (Ta)	23mOhm @ 6.5A, 4.5V	1V @ 250µA	7.1nC @ 4.5V	647pF @ 10V	950mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerUDFN	U-DFN3030-8
G120N03D32	Goford Semiconductor	MOSFET 2N-CH 30V 28A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (3.15x3.05)	Package: -	Stock14,985	-	30V	28A (Tc)	12mOhm @ 10A, 10V	2.2V @ 250µA	18nC @ 10V	1089pF @ 15V	20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (3.15x3.05)
DMNH6065SSD-13	Diodes Incorporated	MOSFET 2N-CH 60V 3.8A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	60V	3.8A (Ta)	65mOhm @ 3A, 10V	3V @ 250µA	11.3nC @ 10V	446pF @ 30V	1.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVMFWD024N06CT1G	onsemi	MOSFET 2N-CH 60V 8A/24A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	60V	8A (Ta), 24A (Tc)	22.6mOhm @ 3A, 10V	4V @ 20µA	5.7nC @ 10V	333pF @ 30V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMFD5C650NLWFT1G	onsemi	MOSFET 2N-CH 60V 21A/111A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 98µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V Power - Max: 3.5W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	60V	21A (Ta), 111A (Tc)	4.2mOhm @ 20A, 10V	2.2V @ 98µA	16nC @ 4.5V	2546pF @ 25V	3.5W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
FF2MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 500A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	Package: -	Request a Quote	-	1200V (1.2kV)	500A (Tc)	2.13mOhm @ 500A, 15V	5.15V @ 224mA	1340nC @ 15V	39700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
MCQD08P06Y-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 85mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	60V	8A	85mOhm @ 4.3A, 10V	2.5V @ 250µA	4.27nC @ 4.5V	505pF @ 15V	1.9W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
TSM8588CV-RGG	Taiwan Semiconductor Corporation	-60V, -4.5A, COMPLEMENTARY P-CHA FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock30,000	-	-	-	-	-	-	-	-	-	-	-	-
PJL9807_R2_00001	Panjit International Inc.	MOSFET 2P-CH 30V 4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 15V Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	30V	4A (Ta)	52mOhm @ 3A, 10V	2.5V @ 250µA	4.8nC @ 4.5V	516pF @ 15V	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON5802BG	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 10A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	Package: -	Request a Quote	-	30V	10A (Ta)	18mOhm @ 7A, 4.5V	1.5V @ 250µA	32nC @ 10V	1050pF @ 15V	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN-EP (2x5)