Page 22 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF7754
Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock4,720
VEC2616-TL-H-Z
ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

Package: 8-SMD, Flat Lead

Stock3,376
TMC1340-SO
Trinamic Motion Control GmbH

MOSFET 2N/2P-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,200
SI4920DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock596,532
SI7980DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock105,360
SI5511DC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

Package: 8-SMD, Flat Lead

Stock3,840
SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A ES6

Package: SOT-563, SOT-666

Stock1,056,000
FDG6303N_D87Z
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock5,408
BSO207PHXUMA1
Infineon Technologies

MOSFET 2P-CH 20V 5A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,096
EFC4618R-P-TR
ON Semiconductor

MOSFET 2N-CH EFCP1818

Package: 4-XBGA, 4-FCBGA

Stock43,620
NTJD4105CT1G
ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock1,445,352
FDY3000NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.6A SC89

Package: SOT-563, SOT-666

Stock160,128
SIA778DJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V/20V SC70-6

Package: PowerPAK? SC-70-6 Dual

Stock120,012
IPG20N06S415AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock5,680
QH8KA1TCR
Rohm Semiconductor

30V NCH+NCH POWER MOSFET

Package: 8-SMD, Flat Lead

Stock2,688
TT8K2TR
Rohm Semiconductor

MOSFET 2N-CH 30V 2.5A TSST8

Package: 8-SMD, Flat Lead

Stock23,250
FDMQ8203
Fairchild/ON Semiconductor

MOSFET 2N/2P-CH 100V/80V 12-MLP

Package: 12-WDFN Exposed Pad

Stock21,918
FS70UMJ-06F-REN
Renesas Electronics Corporation

MOSFET N-CH 60V 70A

Package: -

Request a Quote
DMC3061SVT-13
Diodes Incorporated

MOSFET N/P-CH 30V 3.4A TSOT23-6

Package: -

Request a Quote
FF11MR12W2M1HPB11BPSA1
Infineon Technologies

MOSFET 1200V

Package: -

Stock54

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7754	Infineon Technologies	MOSFET 2P-CH 12V 5.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock4,720	Logic Level Gate	12V	5.5A	25 mOhm @ 5.4A, 4.5V	900mV @ 250µA	22nC @ 4.5V	1984pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
VEC2616-TL-H-Z	ON Semiconductor	MOSFET N/P-CH 60V 3A/2.5A VEC8 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	Package: 8-SMD, Flat Lead	Stock3,376	Logic Level Gate, 4V Drive	60V	3A, 2.5A	80 mOhm @ 1.5A, 10V	-	10nC @ 10V	505pF @ 20V	1W	-	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
TMC1340-SO	Trinamic Motion Control GmbH	MOSFET 2N/2P-CH 30V 8SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.1A Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V Power - Max: 1.38W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,200	Standard	30V	5.5A, 4.1A	33 mOhm @ 5A, 10V	3V @ 250µA	10nC @ 4.5V	960pF @ 25V	1.38W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4920DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock596,532	Logic Level Gate	30V	-	25 mOhm @ 6.9A, 10V	1V @ 250µA (Min)	23nC @ 5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7980DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8A PPAK SO-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V Power - Max: 19.8W, 21.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock105,360	Standard	20V	8A	22 mOhm @ 5A, 10V	2.5V @ 250µA	27nC @ 10V	1010pF @ 10V	19.8W, 21.9W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI5511DC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Power - Max: 3.1W, 2.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	Package: 8-SMD, Flat Lead	Stock3,840	Logic Level Gate	30V	4A, 3.6A	55 mOhm @ 4.8A, 4.5V	2V @ 250µA	7.1nC @ 5V	435pF @ 15V	3.1W, 2.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SSM6P15FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 0.1A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Package: SOT-563, SOT-666	Stock1,056,000	Logic Level Gate	30V	100mA	12 Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
FDG6303N_D87Z	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock5,408	Logic Level Gate	25V	500mA	450 mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
BSO207PHXUMA1	Infineon Technologies	MOSFET 2P-CH 20V 5A 8DSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,096	Logic Level Gate	20V	5A	45 mOhm @ 5.7A, 4.5V	1.2V @ 44µA	16nC @ 4.5V	1650pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
EFC4618R-P-TR	ON Semiconductor	MOSFET 2N-CH EFCP1818 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XBGA, 4-FCBGA Supplier Device Package: EFCP1313-4CC-037	Package: 4-XBGA, 4-FCBGA	Stock43,620	Logic Level Gate, 2.5V Drive	-	-	-	-	25.4nC @ 4.5V	-	1.6W	150°C (TJ)	Surface Mount	4-XBGA, 4-FCBGA	EFCP1313-4CC-037
NTJD4105CT1G	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock1,445,352	Logic Level Gate	20V, 8V	630mA, 775mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
FDY3000NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 0.6A SC89 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock160,128	Logic Level Gate	20V	600mA	700 mOhm @ 600mA, 4.5V	1.3V @ 250µA	1.1nC @ 4.5V	60pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SIA778DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V/20V SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V Power - Max: 6.5W, 5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock120,012	Logic Level Gate	12V, 20V	4.5A, 1.5A	29 mOhm @ 5A, 4.5V	1V @ 250µA	15nC @ 8V	500pF @ 6V	6.5W, 5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
IPG20N06S415AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	Package: 8-PowerVDFN	Stock5,680	Standard	60V	20A	15.5 mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2260pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
QH8KA1TCR	Rohm Semiconductor	30V NCH+NCH POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 125pf @ 15V Power - Max: 2.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: 8-SMD, Flat Lead	Stock2,688	-	30V	4.5A	73 mOhm @ 4.5A, 10V	2.5V @ 1mA	3nC @ 10V	125pf @ 15V	2.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
TT8K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 2.5A TSST8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	Package: 8-SMD, Flat Lead	Stock23,250	Logic Level Gate	30V	2.5A	90 mOhm @ 2.5A, 4.5V	1.5V @ 1mA	3.2nC @ 4.5V	180pF @ 10V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
FDMQ8203	Fairchild/ON Semiconductor	MOSFET 2N/2P-CH 100V/80V 12-MLP FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V, 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-WDFN Exposed Pad Supplier Device Package: 12-MLP (5x4.5)	Package: 12-WDFN Exposed Pad	Stock21,918	Logic Level Gate	100V, 80V	3.4A, 2.6A	110 mOhm @ 3A, 10V	4V @ 250µA	5nC @ 10V	210pF @ 50V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	12-WDFN Exposed Pad	12-MLP (5x4.5)
FS70UMJ-06F-REN	Renesas Electronics Corporation	MOSFET N-CH 60V 70A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC3061SVT-13	Diodes Incorporated	MOSFET N/P-CH 30V 3.4A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	Package: -	Request a Quote	-	30V	3.4A (Ta), 2.7A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.2V @ 250µA	6.6nC @ 10V, 6.8nC @ 10V	278pF @ 15V, 287pF @ 15V	880mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
FF11MR12W2M1HPB11BPSA1	Infineon Technologies	MOSFET 1200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock54	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	-
AOE6936	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 55A/85A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 2270pF @ 15V Power - Max: 24W, 39W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	Package: -	Stock8,757	-	30V	55A (Tc), 85A (Tc)	5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V	2.2V @ 250µA, 2.1V @ 250µA	15nC @ 4.5V, 25nC @ 4.5V	1150pF @ 15V, 2270pF @ 15V	24W, 39W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
DMT3020UFDB-13	Diodes Incorporated	MOSFET 2N-CH 30V 6.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V Power - Max: 860mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: -	Request a Quote	-	30V	6.5A (Ta)	21mOhm @ 6A, 10V	1.7V @ 250µA	8.8nC @ 10V	383pF @ 15V	860mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SH8K39GZETB	Rohm Semiconductor	MOSFET 2N-CH 60V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	60V	8A (Ta)	21mOhm @ 8A, 10V	2.7V @ 200µA	25nC @ 10V	1240pF @ 30V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
RFD14LN05SM	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
G05NP06S2	Goford Semiconductor	MOSFET N/P-CH 60V 5A/3.1A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc), 3.1A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1336pF @ 30V, 1454pF @ 30V Power - Max: 2.5W (Tc), 1.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock22,470	-	60V	5A (Tc), 3.1A (Tc)	36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V	2V @ 250µA, 2.2V @ 250µA	22nC @ 10V, 37nC @ 10V	1336pF @ 30V, 1454pF @ 30V	2.5W (Tc), 1.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF640ACP001	Fairchild Semiconductor	MOSFET N-CH 200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN2300UFL4Q-7	Diodes Incorporated	MOSFET 2N-CH 20V 2.11A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V Power - Max: 530mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: X2-DFN1310-6	Package: -	Request a Quote	-	20V	2.11A (Ta)	195mOhm @ 300mA, 4.5V	950mV @ 250µA	3.2nC @ 4.5V	135.2pF @ 0V	530mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN	X2-DFN1310-6
HP4936DY	Fairchild Semiconductor	MOSFET 2N-CH 30V 5.8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	30V	5.8A (Ta)	37mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	625pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC