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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 6A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,744 |
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Logic Level Gate | 30V | 6A | 35 mOhm @ 6A, 10V | 2.4V @ 250µA | 16nC @ 10V | 760pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 8V 4A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock60,720 |
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Logic Level Gate | 8V | 4A | 70 mOhm @ 3.3A, 4.5V | 1V @ 250µA | 14nC @ 8V | 420pF @ 4V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 2A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock16,356 |
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Logic Level Gate | 30V | 2A | 235 mOhm @ 2A, 10V | 2.5V @ 1mA | 2.4nC @ 5V | 190pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock3,504 |
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Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
MOSFET 2P-CH 30V 2.34A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.34A
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
- Power - Max: 730mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,192 |
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Logic Level Gate | 30V | 2.34A | 85 mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | 730mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET 2NCH 450V 500MA 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
- Power - Max: 1.64W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,168 |
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Standard | 450V | 500mA (Ta) | 4 Ohm @ 400mA, 10V | 4.5V @ 1mA | 6.9nC @ 10V | 256pF @ 25V | 1.64W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET 2N-CH 20V 23A EFCP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-CSP (1.77x3.54)
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Package: 6-SMD, No Lead |
Stock4,816 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | 27nC @ 4.5V | - | 2.5W | 150°C (TJ) | Surface Mount | 6-SMD, No Lead | 6-CSP (1.77x3.54) |
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Panasonic Electronic Components |
MOSFET 2N-CH 20V 7A WMINI8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: WMini8-F1
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Package: 8-SMD, Flat Lead |
Stock574,416 |
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Standard | 20V | 7A | 21 mOhm @ 2A, 4.5V | 1.3V @ 1mA | - | 1450pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | WMini8-F1 |
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Central Semiconductor Corp |
MOSFET 2P-CH 30V 5.3A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,440 |
|
Standard | 30V | 5.3A | 72 mOhm @ 2.7A, 10V | 3V @ 250µA | 7nC @ 5V | 590pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 10A 6DFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x5)
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Package: 6-SMD, Flat Lead Exposed Pad |
Stock851,832 |
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Logic Level Gate | 20V | 10A | 9.5 mOhm @ 10A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 1510pF @ 10V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, Flat Lead Exposed Pad | 6-DFN-EP (2x5) |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,168 |
|
Logic Level Gate | 20V | 7.5A | 13 mOhm @ 7.5A, 10V | 3V @ 250µA | 24nC @ 10V | 1130pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 20V 14.1A 14-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14.1A, 20A
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Power - Max: 3W, 5.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock359,964 |
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Logic Level Gate | 20V | 14.1A, 20A | 9.4 mOhm @ 11.5A, 10V | 3V @ 250µA | 32nC @ 10V | 1300pF @ 10V | 3W, 5.4W | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Rohm Semiconductor |
MOSFET 2N-CH 60V 0.2A SOT-457
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
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Package: SC-74, SOT-457 |
Stock331,920 |
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Logic Level Gate | 60V | 200mA | 2.4 Ohm @ 200mA, 10V | 2.5V @ 1mA | 4.4nC @ 10V | 15pF @ 10V | 300mW | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | SMT6 |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.305A SOT-563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 305mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 250mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock344,736 |
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Logic Level Gate | 60V | 305mA | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 250mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 24A 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
- Power - Max: 23W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
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Package: PowerPAK? 1212-8 Dual |
Stock2,791,392 |
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Standard | 30V | 24A | 25 mOhm @ 8A, 10V | 3V @ 250µA | 17nC @ 10V | 700pF @ 15V | 23W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.5A/0.33A ES6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
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Package: SOT-563, SOT-666 |
Stock35,052 |
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Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Infineon Technologies |
MOSFET 2N-CH 60V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock610,152 |
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Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 0.49A 6TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 490mA
- Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
- Power - Max: 410mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock141,600 |
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Logic Level Gate | 60V | 490mA | 920 mOhm @ 300mA, 10V | 2.5V @ 250µA | 1.05nC @ 10V | 23pF @ 30V | 410mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Diodes Incorporated |
MOSFET N/P-CH 60V/50V SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V, 50V
- Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,129,772 |
|
Logic Level Gate | 60V, 50V | 115mA, 130mA | 7.5 Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 200mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 0.22A SSOT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock667,008 |
|
Logic Level Gate | 25V | 220mA | 4 Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.7nC @ 4.5V | 9.5pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Micro Commercial Co |
MOSFET N/P-CH 30V 7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.22nC @ 10V, 28.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V, 1497pF @ 15V
- Power - Max: 1.9W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: - |
Stock16,794 |
|
- | 30V | 7A | 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V | 2.2V @ 250µA, 2.5V @ 250µA | 12.22nC @ 10V, 28.5nC @ 10V | 526pF @ 15V, 1497pF @ 15V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Microchip Technology |
SIC 4N-CH 700V 124A SP3F
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
- Power - Max: 365W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
|
Package: - |
Request a Quote |
|
- | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F |
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Good-Ark Semiconductor |
MOSFET 2N-CH 40V 8A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
- Power - Max: 2W (Ta)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock28,200 |
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- | 40V | 8A (Ta) | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 21.6nC @ 10V | 1450pF @ 25V | 2W (Ta) | -50°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Micro Commercial Co |
MOSFET 2N-CH 40V 25A DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: DFN3333-D
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Package: - |
Stock15,180 |
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- | 40V | 25A | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 15nC @ 10V | 750pF @ 20V | 3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | DFN3333-D |
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Micro Commercial Co |
MOSFET 2N-CH 20V 0.75A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 750mA
- Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock113,871 |
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- | 20V | 750mA | 380mOhm @ 650mA, 4.5V | 1.1V @ 250µA | 20nC @ 4.5V | 120pF @ 16V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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SemiQ |
SIC 1200V 20M MOSFET HALF-BRIDGE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 241nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 800V
- Power - Max: 385W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock60 |
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- | 1200V (1.2kV) | 102A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 241nC @ 20V | 6500pF @ 800V | 385W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Wolfspeed, Inc. |
SIC 1700V 310A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 310A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 310A | - | - | - | - | - | - | Chassis Mount | Module | - |
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Vishay Siliconix |
MOSFET 2N-CH 30V 15.7A 8PWR33
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
- Power - Max: 3.7W (Ta), 16.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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Package: - |
Stock36,255 |
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- | 30V | 15.7A (Ta), 33.4A (Tc) | 9.4mOhm @ 10A, 10V | 2.4V @ 250µA | 12.2nC @ 10V | 580pF @ 15V | 3.7W (Ta), 16.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |