Page 19 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

SI4565ADY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 6.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,520
APTM120H57FT3G
Microsemi Corporation

MOSFET 4N-CH 1200V 17A SP3

Package: SP3

Stock6,080
AOP610
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

Package: 8-DIP (0.300", 7.62mm)

Stock471,744
MMDF2C03HDR2
ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,800
APTM100TA35FPG
Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6-P

Package: SP6

Stock5,824
MTM763250LBF
Panasonic Electronic Components

MOSFET N/P-CH 20V 1.7A/1A 6-SMD

Package: 6-SMD, Flat Leads

Stock2,128
EM6K33T2R
Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

Package: SOT-563, SOT-666

Stock7,024
DMTH4007SPDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V POWERDI506

Package: 8-PowerTDFN

Stock5,952
FDG6301N_F085
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.22A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock140,082
NTMFD4901NFT1G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

Package: 8-PowerTDFN

Stock22,332
SI1902DL-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.66A SC-70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock533,148
SI4925BDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,009,608
AO4882
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock217,260
SH8MB5TB1
Rohm Semiconductor

MOSFET N/P-CH 40V 8.5A 8SOP

Package: -

Stock18,546
MC7252KDW-TP
Micro Commercial Co

MOSFET N/P-CH 60V 0.34A SOT363

Package: -

Stock212,004
GSFK0501E
Good-Ark Semiconductor

MOSFET 2P-CH 50V 0.18A SOT363

Package: -

Stock17,850
SQJB68EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 100V 11A PPAK SO8

Package: -

Stock53,844
SI6963DQ
Fairchild Semiconductor

MOSFET 2P-CH 20V 3.8A 8TSSOP

Package: -

Request a Quote
TSM085NB03DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 12A/51A 8PDFNU

Package: -

Stock15,000
MSCSM70TLM10C3AG
Microchip Technology

SIC 4N-CH 700V 241A MODULE

Package: -

Stock45

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4565ADY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 6.6A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,520	Standard	40V	6.6A, 5.6A	39 mOhm @ 5A, 10V	2.2V @ 250µA	22nC @ 10V	625pF @ 20V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM120H57FT3G	Microsemi Corporation	MOSFET 4N-CH 1200V 17A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock6,080	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AOP610	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8DIP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Package: 8-DIP (0.300", 7.62mm)	Stock471,744	Logic Level Gate	30V	-	24 mOhm @ 7.7A, 10V	3V @ 250µA	15nC @ 10V	630pF @ 15V	2.3W	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
MMDF2C03HDR2	ON Semiconductor	MOSFET N/P-CH 30V 4.1A/3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,800	Logic Level Gate	30V	4.1A, 3A	70 mOhm @ 3A, 10V	3V @ 250µA	16nC @ 10V	630pF @ 24V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
APTM100TA35FPG	Microsemi Corporation	MOSFET 6N-CH 1000V 22A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	Package: SP6	Stock5,824	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
MTM763250LBF	Panasonic Electronic Components	MOSFET N/P-CH 20V 1.7A/1A 6-SMD FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A, 1A Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power - Max: 700mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: WSMini6-F1-B	Package: 6-SMD, Flat Leads	Stock2,128	Logic Level Gate	20V	1.7A, 1A	120 mOhm @ 1A, 4V	1.3V @ 1mA	-	280pF @ 10V	700mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	WSMini6-F1-B
EM6K33T2R	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: SOT-563, SOT-666	Stock7,024	Logic Level Gate, 1.2V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
DMTH4007SPDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V POWERDI506 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.2A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Power - Max: 2.6W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	Package: 8-PowerTDFN	Stock5,952	Standard	40V	14.2A	8.6 mOhm @ 17A, 10V	4V @ 250µA	41.9nC @ 10V	2026pF @ 30V	2.6W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
FDG6301N_F085	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.22A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock140,082	Logic Level Gate	25V	220mA	4 Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
NTMFD4901NFT1G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 1.1W, 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	Package: 8-PowerTDFN	Stock22,332	Logic Level Gate	30V	10.3A, 17.9A	6.5 mOhm @ 10A, 10V	2.2V @ 250µA	9.7nC @ 4.5V	1150pF @ 15V	1.1W, 1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
SI1902DL-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.66A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock533,148	Logic Level Gate	20V	660mA	385 mOhm @ 660mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI4925BDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 5.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,009,608	Logic Level Gate	30V	5.3A	25 mOhm @ 7.1A, 10V	3V @ 250µA	50nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4882	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 40V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock217,260	Logic Level Gate	40V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	12nC @ 10V	415pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SH8MB5TB1	Rohm Semiconductor	MOSFET N/P-CH 40V 8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 20V, 51nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V, 2870pF @ 20V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock18,546	-	40V	8.5A (Ta)	19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V	2.5V @ 1mA	10.6nC @ 20V, 51nC @ 20V	530pF @ 20V, 2870pF @ 20V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MC7252KDW-TP	Micro Commercial Co	MOSFET N/P-CH 60V 0.34A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 340mA, 180mA Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA, 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF, 30pF @ 10V, 5V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock212,004	-	60V, 50V	340mA, 180mA	5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V	2.5V @ 1mA, 2V @ 250µA	-	40pF, 30pF @ 10V, 5V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
GSFK0501E	Good-Ark Semiconductor	MOSFET 2P-CH 50V 0.18A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 530pC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25.2pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock17,850	-	50V	180mA (Ta)	4Ohm @ 150mA, 10V	3V @ 250µA	530pC @ 10V	25.2pF @ 25V	300mW (Ta)	-50°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SQJB68EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 100V 11A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock53,844	-	100V	11A (Tc)	92mOhm @ 4A, 10V	2.5V @ 250µA	8nC @ 10V	280pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SI6963DQ	Fairchild Semiconductor	MOSFET 2P-CH 20V 3.8A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 10V Power - Max: 600mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: -	Request a Quote	-	20V	3.8A (Ta)	43mOhm @ 3.8A, 4.5V	1.5V @ 250µA	16nC @ 4.5V	1015pF @ 10V	600mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
TSM085NB03DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 30V 12A/51A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Package: -	Stock15,000	Logic Level Gate	30V	12A (Ta), 51A (Tc)	8.5mOhm @ 12A, 10V	2.5V @ 250µA	20nC @ 10V	1091pF @ 15V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)
MSCSM70TLM10C3AG	Microchip Technology	SIC 4N-CH 700V 241A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: Module	Package: -	Stock45	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA (Typ)	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	Module	Module
FF8MR12W2M1B11BOMA1	Infineon Technologies	MOSFET 2N-CH 1200V AG-EASY2BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A (Tj) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2BM-2	Package: -	Request a Quote	-	1200V (1.2kV)	150A (Tj)	7.5mOhm @ 150A, 15V (Typ)	5.55V @ 60mA	372nC @ 15V	11000pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY2BM-2
FF6MR12W2M1PB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 200A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	200A (Tj)	5.63mOhm @ 200A, 15V	5.55V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
DMT10H072LDV-7	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	Package: -	Request a Quote	-	100V	12A (Tc)	66mOhm @ 4.5A, 10V	3V @ 250µA	4.5nC @ 10V	228pF @ 50V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
G06NP06S2	Goford Semiconductor	MOSFET N/P-CH 60V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V Power - Max: 2W (Tc), 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOP Supplier Device Package: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock35,880	-	60V	6A (Tc)	35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V	2.5V @ 250µA, 3.5V @ 250µA	22nC @ 10V, 25nC @ 10V	1350pF @ 30V, 2610pF @ 30V	2W (Tc), 2.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
MSCSM120HM083AG	Microchip Technology	SIC 4N-CH 1200V 251A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Power - Max: 1.042kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9000pF @ 1000V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
NXH010P120MNF1PNG	onsemi	SIC 2N-CH 1200V 114A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Power - Max: 250W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock150	-	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	4707pF @ 800V	250W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
BSZ0908NDXTMA2	Infineon Technologies	MOSFET 2N-CH 30V 4.8A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V Power - Max: 700mW (Ta), 860mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	Package: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	4.8A (Ta), 7.6A (Ta)	18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V	2V @ 250µA	3nC @ 4.5V, 6.4nC @ 4.5V	340pF @ 15V, 730pF @ 15V	700mW (Ta), 860mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-WISON-8
UT6JA3TCR	Rohm Semiconductor	MOSFET 2P-CH 20V 5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	Package: -	Stock8,475	-	20V	5A (Ta)	59mOhm @ 5A, 4.5V	1.5V @ 1mA	6.5nC @ 4.5V	460pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8