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Infineon Technologies |
MOSFET 2N-CH 30V 6.2A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.2A
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock63,732 |
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Logic Level Gate | 30V | 6.2A | 38 mOhm @ 5A, 4.5V | 1V @ 250µA | 10.5nC @ 5V | 780pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Renesas Electronics America |
MOSFET 2P-CH 20V 3A 6HUSON
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V
- Power - Max: 2.3W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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Package: 6-WFDFN Exposed Pad |
Stock5,232 |
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Logic Level Gate, 1.8V Drive | 20V | 3A | 79 mOhm @ 1.5A, 4.5V | - | 5.1nC @ 4.5V | 473pF @ 10V | 2.3W | 150°C (TJ) | Surface Mount | 6-WFDFN Exposed Pad | 6-HUSON (2x2) |
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Vishay Siliconix |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,856 |
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Logic Level Gate | 30V | - | 35 mOhm @ 6.5A, 10V | 1V @ 250µA (Min) | 35nC @ 10V | - | 2.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 30V 3.6A 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock85,908 |
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Logic Level Gate | 30V | 3.6A | 31 mOhm @ 4.7A, 10V | 3V @ 250µA | 20nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Vishay Siliconix |
MOSFET 2P-CH 12V 4.8A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.8A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock456,828 |
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Logic Level Gate | 12V | 4.8A | 35 mOhm @ 6.4A, 4.5V | 1.4V @ 250µA | 20nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET 2N-CH 20V 4.7A 8TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
- Power - Max: 940mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock6,256 |
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Logic Level Gate | 20V | 4.7A | 32 mOhm @ 6.9A, 4.5V | 1.2V @ 250µA | 22nC @ 4.5V | 1400pF @ 16V | 940mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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STMicroelectronics |
MOSFET N/P-CH 100V 3A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,360 |
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Logic Level Gate | 100V | 3A | 145 mOhm @ 1.5A, 10V | 2V @ 250µA | 20nC @ 10V | 460pF @ 25V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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IXYS |
MOSFET 2N-CH 70V 165A TO-240AA
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 70V
- Current - Continuous Drain (Id) @ 25°C: 165A
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 82.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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Package: TO-240AA |
Stock3,216 |
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Standard | 70V | 165A | 7 mOhm @ 82.5A, 10V | 4V @ 8mA | 480nC @ 10V | 8800pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | TO-240AA | TO-240AA |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP
- FET Type: 4 N-Channel, Matched Pair
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: 80mA
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 20mV @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock5,008 |
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Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | - | - | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 9A/7A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A, 7A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,128 |
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Logic Level Gate | 30V | 9A, 7A | 18 mOhm @ 9A, 10V | 2.5V @ 1mA | 21nC @ 5V | 1190pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET 2P-CH 20V 0.43A SOT-363
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 430mA
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
- Power - Max: 250mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock912,780 |
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Logic Level Gate | 20V | 430mA | 900 mOhm @ 430mA, 4.5V | 1V @ 250µA | - | 175pF @ 16V | 250mW | -65°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 6-TSOP
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock11,386,968 |
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Logic Level Gate | 30V | 3.4A, 2.3A | 60 mOhm @ 3.4A, 10V | 1.5V @ 250µA | 12nC @ 10V | 285pF @ 15V | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Nexperia USA Inc. |
MOSFET 2N-CH 40V 30A LFPAK56D
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
- Power - Max: 38W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: SOT-1205, 8-LFPAK56 |
Stock7,312 |
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Logic Level Gate | 40V | 30A | 16 mOhm @ 10A, 10V | 2.1V @ 1mA | 14.5nC @ 10V | 1061pF @ 25V | 38W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 60V 0.115A SC70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,247,348 |
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Logic Level Gate | 60V | 115mA | 7.5 Ohm @ 50mA, 5V | 2V @ 250µA | - | 50pF @ 25V | 200mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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STMicroelectronics |
MOSFET 2N-CH 30V 8A/9A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 9A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,096,416 |
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Logic Level Gate | 30V | 8A, 9A | 22 mOhm @ 4A, 10V | 1V @ 250µA | 10nC @ 4.5V | 857pF @ 25V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
MOSFET N/P-CH 30V POWERFLAT
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A, 30A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V
- Power - Max: 60W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFlat? (5x6)
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Package: 8-PowerVDFN |
Stock5,008 |
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Logic Level Gate | 30V | 40A, 30A | 21 mOhm @ 4A, 10V | 1V @ 250µA (Min) | 4.6nC @ 4.5V | 475pF @ 24V | 60W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat? (5x6) |
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Rohm Semiconductor |
20V PCH+PCH MIDDLE POWER MOSFET,
- FET Type: 2 P-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock23,028 |
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- | 30V | 5A | 38 mOhm @ 5A, 4.5V | 1.2V @ 1mA | 10.2nC @ 4.5V | 720pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
- Power - Max: 1.98W, 4.16W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,490,928 |
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Standard | 30V | 8A, 15.2A | 17 mOhm @ 8A, 10V | 2.5V @ 1mA | 44nC @ 10V | 1535pF @ 15V | 1.98W, 4.16W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 30V 30A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
- Power - Max: 56W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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Package: - |
Stock17,205 |
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- | 30V | 30A (Tc) | 17mOhm @ 7.5A, 10V | 2.5V @ 250µA | 50nC @ 10V | 1680pF @ 10V | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Diodes Incorporated |
MOSFET 2P-CH 30V 0.62A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock30,000 |
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- | 30V | 620mA (Ta) | 900mOhm @ 420mA, 10V | 2.6V @ 250µA | 0.8nC @ 10V | 19pF @ 15V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Rohm Semiconductor |
MOSFET 2P-CH 20V 3A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerUDFN
- Supplier Device Package: DFN2020-8D
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Package: - |
Stock8,922 |
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- | 20V | 3A (Ta) | 85mOhm @ 3A, 4.5V | 1V @ 1mA | 8.5nC @ 4.5V | 2000pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-PowerUDFN | DFN2020-8D |
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Microchip Technology |
SIC 2N-CH 1700V 280A SP6C LI
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V
- Vgs(th) (Max) @ Id: 4V @ 108mA
- Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V
- Power - Max: 1780W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C LI
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Package: - |
Request a Quote |
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- | 1700V (1.7kV) | 280A (Tc) | 11.7mOhm @ 300A, 20V | 4V @ 108mA | 1128nC @ 20V | 22000pF @ 1000V | 1780W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | SP6C LI |
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Infineon Technologies |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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onsemi |
PCH+PCH 4V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Goford Semiconductor |
MOSFET 2P-CH 60V 3.2A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
- Power - Max: 2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock11,874 |
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- | 60V | 3.2A (Tc) | 170mOhm @ 1A, 10V | 2.5V @ 250µA | 11.3nC @ 10V | 594pF @ 30V | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Taiwan Semiconductor Corporation |
MOSFET N/P-CH 20V 5.5A/10A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
- Power - Max: 1.89W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (2x2)
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Package: - |
Stock35,670 |
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- | 20V | 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc) | 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V | 800mV @ 250µA | 7.5nC @ 4.5V, 9.4nC @ 4.5V | 534pF @ 10V, 909pF @ 10V | 1.89W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-DFN (2x2) |
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onsemi |
APM16-CDA SF3 650V 51MOHM ALN Y
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
- Power - Max: 463W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-SSIP Exposed Pad, Formed Leads
- Supplier Device Package: APMCA-A16
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Package: - |
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- | 650V | 64A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 12-SSIP Exposed Pad, Formed Leads | APMCA-A16 |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 500mA
- Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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- | 30V | 500mA | 750mOhm @ 300mA, 10V | 1.5V @ 250µA | 1.28nC @ 10V | 28pF @ 15V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |