Page 51 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF7325TR
Infineon Technologies

MOSFET 2P-CH 12V 7.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock48,000
SIB914DK-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 8V 1.5A PPAK SC75-6

Package: PowerPAK? SC-75-6L Dual

Stock3,328
SI7940DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 12V 7.6A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock5,488
SI7946DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 150V 2.1A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock36,000
BSO211PHXUMA1
Infineon Technologies

MOSFET 2P-CH 20V 4A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,528
APTSM120AM08CT6AG
Microsemi Corporation

POWER MODULE - SIC

Package: SP6

Stock5,024
APTM10TAM09FPG
Microsemi Corporation

MOSFET 6N-CH 100V 139A SP6-P

Package: SP6

Stock6,400
APTC60AM83B1G
Microsemi Corporation

MOSFET 3N-CH 600V 36A SP1

Package: SP1

Stock7,776
ALD210808APCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

Package: 16-DIP (0.300", 7.62mm)

Stock7,392
SI3948DV-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock616,800
PHKD6N02LT,518
Nexperia USA Inc.

MOSFET 2N-CH 20V 10.9A SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,984
PHC21025,118
Nexperia USA Inc.

MOSFET N/P-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock60,000
FDZ1905PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 6-WLCSP

Package: 6-UFBGA, WLCSP

Stock6,560
SQJQ904E-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

Package: PowerPAK? 8 x 8 Dual

Stock20,748
EFC6601R-TR
ON Semiconductor

MOSFET 2N-CH EFCP

Package: 6-XFBGA

Stock42,462
DMC67D8UFDB-13
Diodes Incorporated

MOSFET 41V-60V U-DFN2020-6

Package: -

Request a Quote
MCH6617-TL-E
onsemi

PCH+PCH 2.5V DRIVE SERIES

Package: -

Request a Quote
HAT2043R-EL-E
Renesas Electronics Corporation

MOSFET 2N-CH 30V 8A 8SOP

Package: -

Request a Quote
SP8M4HZGTB
Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

Package: -

Stock5,937
SIX3134KA-T8PQ2
Micro Commercial Co

MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7325TR	Infineon Technologies	MOSFET 2P-CH 12V 7.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock48,000	Logic Level Gate	12V	7.8A	24 mOhm @ 7.8A, 4.5V	900mV @ 250µA	33nC @ 4.5V	2020pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIB914DK-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 8V 1.5A PPAK SC75-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	Package: PowerPAK? SC-75-6L Dual	Stock3,328	Standard	8V	1.5A	113 mOhm @ 2.5A, 4.5V	800mV @ 250µA	2.6nC @ 5V	125pF @ 4V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
SI7940DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 7.6A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock5,488	Logic Level Gate	12V	7.6A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI7946DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 150V 2.1A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock36,000	Logic Level Gate	150V	2.1A	150 mOhm @ 3.3A, 10V	4V @ 250µA	20nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
BSO211PHXUMA1	Infineon Technologies	MOSFET 2P-CH 20V 4A 8DSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,528	Logic Level Gate	20V	4A	67 mOhm @ 4.6A, 4.5V	1.2V @ 25µA	10nC @ 4.5V	1095pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
APTSM120AM08CT6AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2300W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Package: SP6	Stock5,024	Silicon Carbide (SiC)	1200V (1.2kV)	370A (Tc)	10 mOhm @ 200A, 20V	3V @ 10mA	1360nC @ 20V	-	2300W	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
APTM10TAM09FPG	Microsemi Corporation	MOSFET 6N-CH 100V 139A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	Package: SP6	Stock6,400	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTC60AM83B1G	Microsemi Corporation	MOSFET 3N-CH 600V 36A SP1 FET Type: 3 N Channel (Phase Leg + Boost Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 83 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock7,776	Super Junction	600V	36A	83 mOhm @ 24.5A, 10V	5V @ 3mA	250nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
ALD210808APCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	Package: 16-DIP (0.300", 7.62mm)	Stock7,392	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SI3948DV-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock616,800	Logic Level Gate	30V	-	105 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.2nC @ 5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
PHKD6N02LT,518	Nexperia USA Inc.	MOSFET 2N-CH 20V 10.9A SOT96-1 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.9A Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power - Max: 4.17W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,984	Logic Level Gate	20V	10.9A	20 mOhm @ 3A, 5V	1.5V @ 250µA	15.3nC @ 5V	950pF @ 10V	4.17W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PHC21025,118	Nexperia USA Inc.	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock60,000	Logic Level Gate	30V	3.5A, 2.3A	100 mOhm @ 2.2A, 10V	2.8V @ 1mA	30nC @ 10V	250pF @ 20V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDZ1905PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 6-WLCSP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WLCSP	Package: 6-UFBGA, WLCSP	Stock6,560	Logic Level Gate	-	-	126 mOhm @ 1A, 4.5V	1V @ 250µA	-	-	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, WLCSP	6-WLCSP
SQJQ904E-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V PWRPAK8X8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 8 x 8 Dual Supplier Device Package: PowerPAK? 8 x 8 Dual	Package: PowerPAK? 8 x 8 Dual	Stock20,748	Standard	40V	100A (Tc)	3.4 mOhm @ 20A, 10V	3.5V @ 250µA	75nC @ 10V	5900pF @ 20V	75W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual
EFC6601R-TR	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-EFCP (2.7x1.81)	Package: 6-XFBGA	Stock42,462	Logic Level Gate, 2.5V Drive	-	-	-	-	48nC @ 4.5V	-	2W	150°C (TJ)	Surface Mount	6-XFBGA	6-EFCP (2.7x1.81)
DMC67D8UFDB-13	Diodes Incorporated	MOSFET 41V-60V U-DFN2020-6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCH6617-TL-E	onsemi	PCH+PCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
HAT2043R-EL-E	Renesas Electronics Corporation	MOSFET 2N-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 10V Power - Max: 3W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	Logic Level Gate, 4V Drive	30V	8A (Ta)	22mOhm @ 4A, 10V	2.5V @ 1mA	32nC @ 10V	1170pF @ 10V	3W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8M4HZGTB	Rohm Semiconductor	MOSFET N/P-CH 30V 9A/7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock5,937	-	30V	9A (Ta), 7A (Ta)	18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V	2.5V @ 1mA	15nC @ 5V, 25nC @ 5V	1190pF @ 10V, 2600pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SIX3134KA-T8PQ2	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V Power - Max: 180mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	20V	750mA	300mOhm @ 500mA, 4.5V	0.95V @ 250µA	0.8nC @ 4.5V	33pF @ 16V	180mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FS55MR12W1M1HB11NPSA1	Infineon Technologies	SIC 6N-CH 1200V 15A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 15A (Tj) Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 18V Vgs(th) (Max) @ Id: 5.15V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	Package: -	Stock63	-	1200V (1.2kV)	15A (Tj)	79mOhm @ 15A, 18V	5.15V @ 6mA	45nC @ 18V	1350pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY1B
DMC31D5UDA-7B	Diodes Incorporated	MOSFET N/P-CH 30V 0.4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	Package: -	Stock29,160	-	30V	400mA (Ta)	1.5Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
SP8M51HZGTB	Rohm Semiconductor	MOSFET N/P-CH 100V 3A/2.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock3,189	-	100V	3A (Ta), 2.5A (Ta)	170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V	2.5V @ 1mA	8.5nC @ 5V, 12.5nC @ 5V	610pF @ 25V, 1550pF @ 25V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJS6809_S1_00001	Panjit International Inc.	MOSFET 2P-CH 30V 2.6A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 15V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Package: -	Stock36,843	-	30V	2.6A (Ta)	115mOhm @ 2.6A, 10V	2.1V @ 250µA	9.8nC @ 10V	396pF @ 15V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
DMP2900UVQ-13	Diodes Incorporated	MOSFET 2P-CH 20V 0.85A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock29,490	-	20V	850mA (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.7nC @ 4.5V	49pF @ 16V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMTH45M5SPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V Power - Max: 3.3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Stock270	-	40V	79A (Tc)	5.5mOhm @ 25A, 10V	3.5V @ 250µA	13.2nC @ 10V	1083pF @ 20V	3.3W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
SI1553CDL-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 20V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: -	Request a Quote	-	20V	700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)	390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V	1.5V @ 250µA	1.8nC @ 10V, 3nC @ 10V	38pF @ 10V, 43pF @ 10V	290mW (Ta), 340mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
TSM3911DCX6	Taiwan Semiconductor Corporation	MOSFET 2P-CH 20V 2.2A SOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V Power - Max: 1.15W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: -	Request a Quote	-	20V	2.2A (Ta)	140mOhm @ 2.2A, 4.5V	0.95V @ 250µA	15.23nC @ 4.5V	882.51pF @ 6V	1.15W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26