Page 50 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF7338TRPBF
Infineon Technologies

MOSFET N/P-CH 12V 6.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock956,268
SI1539DL-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock172,176
HUF76407DK8T
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V SOP-8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,328
UPA2690T1R-E2-AX
Renesas Electronics America

MOSFET N/P-CH 20V 4A/3A 6SON

Package: 6-WFDFN Exposed Pad

Stock2,800
TSM6968SDCA RVG
TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock3,504
TSM250N02DCQ RFG
TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

Package: 6-VDFN Exposed Pad

Stock3,536
STL66DN3LLH5
STMicroelectronics

MOSFET 2N-CH 30V 78.5A PWRFLAT56

Package: 8-PowerVDFN

Stock2,528
DMC6040SSD-13
Diodes Incorporated

MOSFET N/P-CH 60V 5.1A/3.1A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock690,000
ALD110908APAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

Package: 8-DIP (0.300", 7.62mm)

Stock6,660
TPD3215M
Transphorm

CASCODE GAN HB 600V 70A MODULE

Package: Module

Stock5,616
AUIRF7309QTR
Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,608
IRF7503TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 2.4A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock91,512
UT6MA3TCR
Rohm Semiconductor

20V NCH+PCH MIDDLE POWER MOSFET

Package: 6-UDFN Exposed Pad

Stock5,184
CSD75208W1015T
Texas Instruments

MOSFET 2P-CH 20V 1.6A 6WLP

Package: 6-UFBGA, DSBGA

Stock12,030
SLA5085
Sanken

MOSFET 5N-CH 60V 10A 12-SIP

Package: 12-SIP, Exposed Tab

Stock8,436
SI4204DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 19.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000
FDMC0228
Fairchild Semiconductor

MOSFET N-CH

Package: -

Request a Quote
UPA1873GR-9JG-E1-A
Renesas Electronics Corporation

MOSFET 2N-CH 20V 6A 8TSSOP

Package: -

Request a Quote
DMP4025LSDQ-13
Diodes Incorporated

MOSFET 2P-CH 40V 5.8A 8SO

Package: -

Stock7,500
UT6MB5TCR
Rohm Semiconductor

MOSFET 40V 5A/3.5A HUML2020L8

Package: -

Stock8,970

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7338TRPBF	Infineon Technologies	MOSFET N/P-CH 12V 6.3A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock956,268	Logic Level Gate	12V	6.3A, 3A	34 mOhm @ 6A, 4.5V	1.5V @ 250µA	8.6nC @ 4.5V	640pF @ 9V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1539DL-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock172,176	Logic Level Gate	30V	540mA, 420mA	480 mOhm @ 590mA, 10V	2.6V @ 250µA	1.4nC @ 10V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
HUF76407DK8T	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V SOP-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,328	Logic Level Gate	60V	-	90 mOhm @ 3.8A, 10V	3V @ 250µA	11.2nC @ 10V	330pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UPA2690T1R-E2-AX	Renesas Electronics America	MOSFET N/P-CH 20V 4A/3A 6SON FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 42 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	Package: 6-WFDFN Exposed Pad	Stock2,800	Logic Level Gate, 2.5V Drive	20V	4A, 3A	42 mOhm @ 2A, 4.5V	-	4.5nC @ 10V	330pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
TSM6968SDCA RVG	TSC America Inc.	MOSFET, DUAL, N-CHANNEL, TRENCH, FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock3,504	Standard	20V	6.5A (Ta)	22 mOhm @ 6.5A, 4.5V	1V @ 250µA	15nC @ 4.5V	950pF @ 10V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
TSM250N02DCQ RFG	TSC America Inc.	MOSFET, DUAL, N-CHANNEL, TRENCH, FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V Power - Max: 620mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-TDFN (2x2)	Package: 6-VDFN Exposed Pad	Stock3,536	Standard	20V	5.8A (Tc)	25 mOhm @ 4A, 4.5V	800mV @ 250µA	7.7nC @ 4.5V	775pF @ 10V	620mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-TDFN (2x2)
STL66DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 78.5A PWRFLAT56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 78.5A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 72W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	Package: 8-PowerVDFN	Stock2,528	Logic Level Gate	30V	78.5A	6.5 mOhm @ 10A, 10V	3V @ 250µA	12nC @ 4.5V	1500pF @ 25V	72W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
DMC6040SSD-13	Diodes Incorporated	MOSFET N/P-CH 60V 5.1A/3.1A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Power - Max: 1.24W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock690,000	Logic Level Gate	60V	5.1A, 3.1A	40 mOhm @ 8A, 10V	3V @ 250µA	20.8nC @ 10V	1130pF @ 15V	1.24W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD110908APAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Package: 8-DIP (0.300", 7.62mm)	Stock6,660	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	810mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
TPD3215M	Transphorm	CASCODE GAN HB 600V 70A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V Power - Max: 470W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: Module	Package: Module	Stock5,616	GaNFET (Gallium Nitride)	600V	70A (Tc)	34 mOhm @ 30A, 8V	-	28nC @ 8V	2260pF @ 100V	470W	-40°C ~ 150°C (TJ)	Through Hole	Module	Module
AUIRF7309QTR	Infineon Technologies	MOSFET N/P-CH 30V 4A/3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,608	Logic Level Gate	30V	4A, 3A	50 mOhm @ 2.4A, 10V	3V @ 250µA	25nC @ 4.5V	520pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7503TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 2.4A MICRO8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock91,512	Logic Level Gate	30V	2.4A	135 mOhm @ 1.7A, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
UT6MA3TCR	Rohm Semiconductor	20V NCH+PCH MIDDLE POWER MOSFET FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: HUML2020L8	Package: 6-UDFN Exposed Pad	Stock5,184	-	20V	5A, 5.5A	59 mOhm @ 5A, 4.5V	1.5V @ 1mA	6.5nC @ 4.5V	460pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	HUML2020L8
CSD75208W1015T	Texas Instruments	MOSFET 2P-CH 20V 1.6A 6WLP FET Type: 2 P-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 68 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Supplier Device Package: 6-DSBGA	Package: 6-UFBGA, DSBGA	Stock12,030	Logic Level Gate	20V	1.6A	68 mOhm @ 1A, 4.5V	1.1V @ 250µA	2.5nC @ 4.5V	410pF @ 10V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, DSBGA	6-DSBGA
SLA5085	Sanken	MOSFET 5N-CH 60V 10A 12-SIP FET Type: 5 N-Channel, Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	Package: 12-SIP, Exposed Tab	Stock8,436	Logic Level Gate	60V	10A	220 mOhm @ 3A, 4V	2V @ 250µA	-	320pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
SI4204DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 19.8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 19.8A Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V Power - Max: 3.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	Standard	20V	19.8A	4.6 mOhm @ 10A, 10V	2.4V @ 250µA	45nC @ 10V	2110pF @ 10V	3.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC0228	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UPA1873GR-9JG-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 20V 6A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: -	Request a Quote	Logic Level Gate	20V	6A	23mOhm @ 3A, 4.5V	1.5V @ 1mA	9nC @ 4V	705pF @ 10V	2W	-	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMP4025LSDQ-13	Diodes Incorporated	MOSFET 2P-CH 40V 5.8A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Stock7,500	-	40V	5.8A (Ta)	25mOhm @ 3A, 10V	1.8V @ 250µA	33.7nC @ 10V	1640pF @ 20V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UT6MB5TCR	Rohm Semiconductor	MOSFET 40V 5A/3.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	Package: -	Stock8,970	-	40V	5A (Ta), 3.5A (Tc)	48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V	2.5V @ 1mA	-	-	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
DMC2053UVT-13	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Stock53,334	-	20V	4.6A (Ta), 3.2A (Ta)	35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V, 5.9nC @ 4.5V	369pF @ 10V, 440pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMT47M2LDV-13	Diodes Incorporated	MOSFET 2N-CH 40V 11.9A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Power - Max: 2.34W (Ta), 14.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	Package: -	Request a Quote	-	40V	11.9A (Ta), 30.2A (Tc)	10.8mOhm @ 20A, 10V	2.3V @ 250µA	14nC @ 10V	891pF @ 20V	2.34W (Ta), 14.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
FDPF9N50NZ-FS	Fairchild Semiconductor	MOSFET N-CH 500V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SCH2819-TL-H	onsemi	NCH+SBD 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DI038N04PQ2-AQ	Diotec Semiconductor	MOSFET POWERQFN 5X6-DUAL N+N 45V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: -	Request a Quote	-	45V	38A (Tc)	12mOhm @ 10A, 10V	2.5V @ 250µA	14nC @ 10V	830pF @ 30V	31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SSF2145CH6	Good-Ark Semiconductor	MOSFET 20V 4.8A/2.9A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: -	Stock18,000	-	20V	4.8A (Tc), 2.9A (Tc)	55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V	1V @ 250µA	-	420pF @ 10V	1.7W	-55°C ~ 150°C	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
TPS2013APWR	Texas Instruments	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN3012LFG-13	Diodes Incorporated	MOSFET 2N-CH 30V 20A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	Package: -	Request a Quote	-	30V	20A (Tc)	12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V	2.1V @ 250µA, 1.15V @ 250µA	6.1nC @ 4.5V, 12.6nC @ 4.5V	850pF @ 15V, 1480pF @ 15V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)