Page 91 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

BSL207NL6327HTSA1
Infineon Technologies

MOSFET 2N-CH 20V 2.1A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,728
IPG15N06S3L-45
Infineon Technologies

MOSFET 2N-CH 55V 15A TDSON-8

Package: 8-PowerVDFN

Stock3,920
AON7826
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 9A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock5,616
SI4965DY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,400
APTM120A80FT1G
Microsemi Corporation

MOSFET 2N-CH 1200V 14A SP1

Package: SP1

Stock2,048
FMM300-0055P
IXYS

MOSFET 2N-CH 55V 300A I4-PAC-5

Package: i4-Pac?-5

Stock3,280
APTC60DDAM24T3G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3

Package: SP3

Stock4,560
DMN2022UNS-7
Diodes Incorporated

MOSFET 2NCH 20V 10.7A POWERDI

Package: 8-PowerVDFN

Stock2,896
DMG1016VQ-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT563

Package: SOT-563, SOT-666

Stock5,344
DMN3055LFDB-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

Package: 6-UDFN Exposed Pad

Stock7,872
CSD88599Q5DCT
Texas Instruments

MOSFET ARRAY 2N-CH 60V 22VSON

Package: 22-PowerTFDFN

Stock5,456
FDME1024NZT
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3.8A 6-MICROFET

Package: 6-UFDFN Exposed Pad

Stock5,856
DMN2028UFDH-7
Diodes Incorporated

MOSFET 2N-CH 20V 6.8A POWERDI

Package: 8-PowerWDFN

Stock5,456
PMCXB900UE
Nexperia USA Inc.

MOSFET N/P-CH 20V 0.6A/0.5A 6DFN

Package: 6-XFDFN Exposed Pad

Stock140,814
ALD114835SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

Stock25,332
FDPC8013S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/26A 3.3MM

Package: 8-PowerWDFN

Stock28,254
NX6020CAKSX
Nexperia USA Inc.

MOSFET N/P-CH 60V 0.17A 6TSSOP

Package: -

Stock56,064
MSCSM120DUM31TBL1NG
Microchip Technology

SIC 2N-CH 1200V 79A

Package: -

Request a Quote
MSCSM70TLM44C3AG
Microchip Technology

SIC 4N-CH 700V 58A SP3F

Package: -

Request a Quote
SSM6P15FU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A US6

Package: -

Stock97,317

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL207NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.1A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,728	Logic Level Gate	20V	2.1A	70 mOhm @ 2.1A, 4.5V	1.2V @ 11µA	2.1nC @ 4.5V	419pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
IPG15N06S3L-45	Infineon Technologies	MOSFET 2N-CH 55V 15A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Power - Max: 21W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock3,920	Logic Level Gate	55V	15A	45 mOhm @ 10A, 10V	2.2V @ 10µA	20nC @ 10V	1420pF @ 25V	21W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
AON7826	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 9A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 23 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	Package: 8-PowerSMD, Flat Leads	Stock5,616	Logic Level Gate	20V	9A	23 mOhm @ 9A, 10V	1.1V @ 250µA	15nC @ 10V	630pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
SI4965DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 8V 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,400	Logic Level Gate	8V	-	21 mOhm @ 8A, 4.5V	450mV @ 250µA (Min)	55nC @ 4.5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM120A80FT1G	Microsemi Corporation	MOSFET 2N-CH 1200V 14A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 960 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock2,048	Standard	1200V (1.2kV)	14A	960 mOhm @ 12A, 10V	5V @ 2.5mA	260nC @ 10V	6696pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
FMM300-0055P	IXYS	MOSFET 2N-CH 55V 300A I4-PAC-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 300A Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5	Stock3,280	Standard	55V	300A	3.6 mOhm @ 150A, 10V	4V @ 2mA	172nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
APTC60DDAM24T3G	Microsemi Corporation	MOSFET 2N-CH 600V 95A SP3 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock4,560	Super Junction	600V	95A	24 mOhm @ 47.5A, 10V	3.9V @ 5mA	300nC @ 10V	14400pF @ 25V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
DMN2022UNS-7	Diodes Incorporated	MOSFET 2NCH 20V 10.7A POWERDI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	Package: 8-PowerVDFN	Stock2,896	Standard	20V	10.7A	10.8 mOhm @ 4A, 4.5V	1V @ 250µA	20.3nC @ 4.5V	1870pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
DMG1016VQ-7	Diodes Incorporated	MOSFET N/P-CH 20V SOT563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Power - Max: 530mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock5,344	Logic Level Gate	20V	870mA, 640mA	400 mOhm @ 600mA, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 16V	530mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3055LFDB-7	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock7,872	Standard	-	5A (Ta)	40 mOhm @ 3A, 4.5V	1.5V @ 250µA	5.3nC @ 4.5V	458pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
CSD88599Q5DCT	Texas Instruments	MOSFET ARRAY 2N-CH 60V 22VSON FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	Package: 22-PowerTFDFN	Stock5,456	Standard	60V	-	2.1 mOhm @ 30A, 10V	2.5V @ 250µA	27nC @ 4.5V	4840pF @ 30V	12W	-55°C ~ 150°C (TJ)	Surface Mount	22-PowerTFDFN	22-VSON-CLIP (5x6)
FDME1024NZT	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 3.8A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-MicroFET (1.6x1.6)	Package: 6-UFDFN Exposed Pad	Stock5,856	Logic Level Gate	20V	3.8A	66 mOhm @ 3.4A, 4.5V	1V @ 250µA	4.2nC @ 4.5V	300pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-MicroFET (1.6x1.6)
DMN2028UFDH-7	Diodes Incorporated	MOSFET 2N-CH 20V 6.8A POWERDI FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: PowerDI3030-8	Package: 8-PowerWDFN	Stock5,456	Logic Level Gate	20V	6.8A	20 mOhm @ 4A, 10V	1V @ 250µA	8.5nC @ 4.5V	151pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	PowerDI3030-8
PMCXB900UE	Nexperia USA Inc.	MOSFET N/P-CH 20V 0.6A/0.5A 6DFN FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Power - Max: 265mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: 6-DFN (1.1x1)	Package: 6-XFDFN Exposed Pad	Stock140,814	Logic Level Gate	20V	600mA, 500mA	620 mOhm @ 600mA, 4.5V	950mV @ 250µA	0.7nC @ 4.5V	21.3pF @ 10V	265mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	6-DFN (1.1x1)
ALD114835SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 540 Ohm @ 0V Vgs(th) (Max) @ Id: 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.154", 3.90mm Width)	Stock25,332	Depletion Mode	10.6V	12mA, 3mA	540 Ohm @ 0V	3.45V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
FDPC8013S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/26A 3.3MM FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V Power - Max: 800mW, 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	Package: 8-PowerWDFN	Stock28,254	Logic Level Gate	30V	13A, 26A	6.4 mOhm @ 13A, 10V	3V @ 250µA	13nC @ 10V	827pF @ 15V	800mW, 900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Powerclip-33
NX6020CAKSX	Nexperia USA Inc.	MOSFET N/P-CH 60V 0.17A 6TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V, 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V, 36pF @ 25V Power - Max: 330mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: -	Stock56,064	-	60V, 50V	170mA (Ta)	4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.43nC @ 4.5V, 0.35nC @ 5V	17pF @ 10V, 36pF @ 25V	330mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
MSCSM120DUM31TBL1NG	Microchip Technology	SIC 2N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM44C3AG	Microchip Technology	SIC 4N-CH 700V 58A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V Power - Max: 176W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Request a Quote	-	700V	58A (Tc)	44mOhm @ 30A, 20V	2.7V @ 2mA	99nC @ 20V	2010pF @ 700V	176W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
SSM6P15FU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Stock97,317	-	30V	100mA	12Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	200mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SI7223DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	Package: -	Stock24,579	-	30V	6A (Tc)	26.4mOhm @ 8A, 10V	2.5V @ 250µA	40nC @ 10V	1425pF @ 15V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
STA508A	Sanken Electric USA Inc.	MOSFET 4N-CH 120V 6A 10SIP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 4W (Ta), 20W (Tc) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: 10-SIP Supplier Device Package: 10-SIP	Package: -	Request a Quote	-	120V	6A (Ta)	200mOhm @ 4A, 10V	2V @ 250µA	-	400pF @ 10V	4W (Ta), 20W (Tc)	150°C	Through Hole	10-SIP	10-SIP
DMN2710UDWQ-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.8A SOT363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Power - Max: 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	20V	800mA (Ta)	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V	42pF @ 16V	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SIZ270DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 7.1A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	Package: -	Stock34,020	-	100V	7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)	37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V	2.4V @ 250µA	27nC @ 10V	860pF @ 50V, 845pF @ 50V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
AO6602G	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 3.5A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.05nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.15W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	Package: -	Request a Quote	-	30V	3.5A (Ta), 2.7A (Ta)	50mOhm @ 3.5A, 10V	2.5V @ 250µA	4.05nC @ 10V	210pF @ 15V	1.15W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
UPA1763G-E2-A	Renesas Electronics Corporation	MOSFET 4.5A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	4.5A	-	-	-	-	-	-	-	-	-
AONL32328	Alpha & Omega Semiconductor Inc.	MOSFET 2N/2P-CH 30V 8A/7A 12DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Power - Max: 2.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-DFN-EP (4x3)	Package: -	Stock32,670	-	30V	8A (Ta), 7A (Ta)	21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V	2.4V @ 250µA, 2.6V @ 250µA	15nC @ 10V, 24nC @ 10V	395pF @ 15V, 730pF @ 15V	2.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-DFN-EP (4x3)
DMP68D1LVQ-13	Diodes Incorporated	BSS FAMILY SOT563 T&R 10K FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 238mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	60V	238mA (Ta)	8Ohm @ 100mA, 5V	2.1V @ 250µA	0.6nC @ 5V	42pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563