Page 92 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AO4914L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

Package: 8-SOIC

Stock36,000
SI9936BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock582,900
FW906-TL-E
ON Semiconductor

MOSFET N/P-CH 30V 8A/6A 8SOP

Package: 8-SOIC (0.173", 4.40mm Width)

Stock5,904
ECH8659-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

Package: 8-SMD, Flat Lead

Stock25,476
UP04878G0L
Panasonic Electronic Components

MOSFET 2N-CH 50V .1A SSMINI-6

Package: SOT-563, SOT-666

Stock3,654,144
SI8904EDB-T2-E1
Vishay Siliconix

MOSFET 2N-CH 30V 3.8A 6-MFP

Package: 6-MICRO FOOT?CSP

Stock4,624
IPG20N06S4L14ATMA2
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock6,944
APTSM120AM55CT1AG
Microsemi Corporation

POWER MODULE - SIC

Package: SP1

Stock2,544
GWM100-0085X1-SMD SAM
IXYS

MOSFET 6N-CH 85V 103A ISOPLUS

Package: 17-SMD, Gull Wing

Stock2,672
GWM100-01X1-SLSAM
IXYS

MOSFET 6N-CH 100V 90A ISOPLUS

Package: 17-SMD, Flat Leads

Stock3,200
FMP36-015P
IXYS

MOSFET N/P-CH 150V 36A/22A I4PAC

Package: i4-Pac?-5

Stock4,208
SI4936BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock10,188
AON6810
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 25A 8-DFN

Package: 8-SMD, Flat Lead Exposed Pad

Stock3,792
DMN2028UFU-13
Diodes Incorporated

MOSFET 2N-CH 20V 7.9A UDFN2020-6

Package: 6-UFDFN Exposed Pad

Stock6,640
BUK9K89-100E,115
Nexperia USA Inc.

MOSFET 2N-CH 100V 12.5A LFPAK56D

Package: SOT-1205, 8-LFPAK56

Stock7,456
CSD87355Q5D
Texas Instruments

MOSFET 2N-CH 30V 8LSON

Package: 8-PowerLDFN

Stock4,928
NTUD3170NZT5G
ON Semiconductor

MOSFET 2N-CH 20V 0.22A SOT-963

Package: SOT-963

Stock703,560
DMT6017LDV-13
Diodes Incorporated

MOSFET 2N-CH 25.3A POWERDI3333

Package: -

Request a Quote
DMTH6015LDVWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

Package: -

Request a Quote
TQM150NB04DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 9A/39A 8PDFNU

Package: -

Stock5,043

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4914L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	Package: 8-SOIC	Stock36,000	Standard	30V	8A	20.5 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	865pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
SI9936BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock582,900	Logic Level Gate	30V	4.5A	35 mOhm @ 6A, 10V	3V @ 250µA	13nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FW906-TL-E	ON Semiconductor	MOSFET N/P-CH 30V 8A/6A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 6A Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.173", 4.40mm Width)	Stock5,904	Logic Level Gate	30V	8A, 6A	24 mOhm @ 8A, 10V	-	12nC @ 10V	690pF @ 10V	2.5W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
ECH8659-TL-H	ON Semiconductor	MOSFET 2N-CH 30V 7A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock25,476	Logic Level Gate	30V	7A	24 mOhm @ 3.5A, 10V	-	11.8nC @ 10V	710pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
UP04878G0L	Panasonic Electronic Components	MOSFET 2N-CH 50V .1A SSMINI-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 125mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F2	Package: SOT-563, SOT-666	Stock3,654,144	Logic Level Gate	50V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	125mW	125°C (TJ)	Surface Mount	SOT-563, SOT-666	SSMini6-F2
SI8904EDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 30V 3.8A 6-MFP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-MICRO FOOT?CSP Supplier Device Package: 6-Micro Foot?	Package: 6-MICRO FOOT?CSP	Stock4,624	Logic Level Gate	30V	3.8A	-	1.6V @ 250µA	-	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-MICRO FOOT?CSP	6-Micro Foot?
IPG20N06S4L14ATMA2	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock6,944	Logic Level Gate	60V	20A	13.7 mOhm @ 17A, 10V	2.2V @ 20µA	39nC @ 10V	2890pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
APTSM120AM55CT1AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V Power - Max: 470W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock2,544	Silicon Carbide (SiC)	1200V (1.2kV)	74A (Tc)	50 mOhm @ 40A, 20V	3V @ 2mA	272nC @ 20V	5120pF @ 1000V	470W	-40°C ~ 175°C (TJ)	Chassis Mount	SP1	SP1
GWM100-0085X1-SMD SAM	IXYS	MOSFET 6N-CH 85V 103A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 103A Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Gull Wing	Stock2,672	Standard	85V	103A	6.2 mOhm @ 75A, 10V	4V @ 250µA	114nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
GWM100-01X1-SLSAM	IXYS	MOSFET 6N-CH 100V 90A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Flat Leads	Stock3,200	Standard	100V	90A	8.5 mOhm @ 80A, 10V	4.5V @ 250µA	90nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
FMP36-015P	IXYS	MOSFET N/P-CH 150V 36A/22A I4PAC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A, 22A Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5	Stock4,208	Standard	150V	36A, 22A	40 mOhm @ 31A, 10V	5.5V @ 250µA	70nC @ 10V	2250pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
SI4936BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock10,188	Logic Level Gate	30V	6.9A	35 mOhm @ 5.9A, 10V	3V @ 250µA	15nC @ 10V	530pF @ 15V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 25A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V Power - Max: 4.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-DFN-EP (5.2x5.55)	Package: 8-SMD, Flat Lead Exposed Pad	Stock3,792	Logic Level Gate	30V	25A	4.4 mOhm @ 20A, 10V	2.2V @ 250µA	34nC @ 10V	1720pF @ 15V	4.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead Exposed Pad	8-DFN-EP (5.2x5.55)
DMN2028UFU-13	Diodes Incorporated	MOSFET 2N-CH 20V 7.9A UDFN2020-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	Package: 6-UFDFN Exposed Pad	Stock6,640	Standard	20V	7.5A	20.2 mOhm @ 4.5A, 4.5V	1V @ 250µA	18.4nC @ 8V	887pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
BUK9K89-100E,115	Nexperia USA Inc.	MOSFET 2N-CH 100V 12.5A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Rds On (Max) @ Id, Vgs: 85 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Power - Max: 38W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: SOT-1205, 8-LFPAK56	Stock7,456	Logic Level Gate	100V	12.5A	85 mOhm @ 5A, 10V	2.1V @ 1mA	16.8nC @ 10V	1108pF @ 25V	38W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
CSD87355Q5D	Texas Instruments	MOSFET 2N-CH 30V 8LSON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	Package: 8-PowerLDFN	Stock4,928	Standard	30V	-	-	1.9V @ 250µA	13.7nC @ 4.5V	1860pF @ 15V	12W	-55°C ~ 150°C (TJ)	-	8-PowerLDFN	8-LSON (5x6)
NTUD3170NZT5G	ON Semiconductor	MOSFET 2N-CH 20V 0.22A SOT-963 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: SOT-963	Stock703,560	Logic Level Gate	20V	220mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12.5pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMT6017LDV-13	Diodes Incorporated	MOSFET 2N-CH 25.3A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	Package: -	Request a Quote	-	-	25.3A (Tc)	22mOhm @ 6A, 10V	2.3V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMTH6015LDVWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Power - Max: 1.46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	Package: -	Request a Quote	-	60V	9.2A (Ta), 24.5A (Tc)	20.5mOhm @ 10A, 10V	2.5V @ 250µA	14.3nC @ 10V	825pF @ 30V	1.46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
TQM150NB04DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 9A/39A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Power - Max: 2.4W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Package: -	Stock5,043	-	40V	9A (Ta), 39A (Tc)	15mOhm @ 9A, 10V	4V @ 250µA	18nC @ 10V	1135pF @ 20V	2.4W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	8-PDFNU (5x6)
DMN62D2UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	60V	455mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AOSD62666E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 9.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock43,119	Logic Level Gate	60V	9.5A (Ta)	14.5mOhm @ 9.5A, 10V	2.2V @ 250µA	10nC @ 4.5V	755pF @ 30V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDG6301N-F085	onsemi	MOSFET 2N-CH 25V 0.22A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88 (SC-70-6)	Package: -	Request a Quote	Logic Level Gate	25V	220mA	4Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88 (SC-70-6)
QH8KB6TCR	Rohm Semiconductor	MOSFET 2N-CH 40V 8A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: -	Stock17,850	-	40V	8A (Ta)	17.7mOhm @ 8A, 10V	2.5V @ 1mA	10.6nC @ 10V	530pF @ 20V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
TPIC1533DW	Texas Instruments	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120HM16CT3AG	Microchip Technology	SIC 4N-CH 1200V 173A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
DMN2030UCA4-7	Diodes Incorporated	MOSFET 2N-CH 20V 6.3A 4DSN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 523pF @ 10V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, DSBGA Supplier Device Package: X4-DSN1111-4	Package: -	Request a Quote	-	20V	6.3A (Ta)	32mOhm @ 1.7A, 4.5V	1.4V @ 160µA	5.6nC @ 10V	523pF @ 10V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, DSBGA	X4-DSN1111-4
IPB13N03LBG	Infineon Technologies	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-