Page 1021 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3711STRRPBF
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock45,036
IRLR7811WPBF
Infineon Technologies

MOSFET N-CH 30V 64A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock401,916
BSS131E6327
Infineon Technologies

MOSFET N-CH 240V .11A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock16,572
PSMN7R6-60XSQ
NXP

MOSFET N-CH 60V TO220AB

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,000
SI4418DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 2.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,720
IRFS11N50A
Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,668
IRFR320TR
Vishay Siliconix

MOSFET N-CH 400V 3.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock75,660
IPC302N25N3X1SA1
Infineon Technologies

MOSFET N-CH 250V BARE DIE

Package: Die

Stock3,920
IPB50R199CPATMA1
Infineon Technologies

MOSFET N-CH 550V 17A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,112
IPD60R460CEAUMA1
Infineon Technologies

CONSUMER

Package: -

Stock6,336
IXFN120N25
IXYS

MOSFET N-CH 250V 120A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,760
NTMS4916NR2G
ON Semiconductor

MOSFET N-CH 30V 11.4A SO8FL

Package: 8-SOIC (0.154", 3.90mm Width)

Stock405,648
SI1441EDH-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock612,624
APT56M50L
Microsemi Corporation

MOSFET N-CH 500V 56A TO-264

Package: TO-264-3, TO-264AA

Stock7,984
FQPF11P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 8.6A TO-220F

Package: TO-220-3 Full Pack

Stock367,536
IPL65R130C7AUMA1
Infineon Technologies

MOSFET N-CH 650V 15A 4VSON

Package: 4-PowerTSFN

Stock5,408
STQ2HNK60ZR-AP
STMicroelectronics

MOSFET N-CH 600V 0.5A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7,584
MIC94050YM4-TR
Microchip Technology

MOSFET P-CH 6V 1.8A SOT-143

Package: TO-253-4, TO-253AA

Stock7,008
IRF8714PBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock18,384
IQE046N08LM5CGATMA1
Infineon Technologies

TRENCH 40<-<100V

Package: -

Stock14,670

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3711STRRPBF	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock45,036	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 10V	3V @ 250µA	44nC @ 4.5V	2980pF @ 10V	±20V	-	3.1W (Ta), 120W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR7811WPBF	Infineon Technologies	MOSFET N-CH 30V 64A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock401,916	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	2.5V @ 250µA	31nC @ 4.5V	2260pF @ 15V	±12V	-	71W (Tc)	10.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS131E6327	Infineon Technologies	MOSFET N-CH 240V .11A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock16,572	MOSFET (Metal Oxide)	240V	110mA (Ta)	4.5V, 10V	1.8V @ 56µA	3.1nC @ 10V	77pF @ 25V	±20V	-	360mW (Ta)	14 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
PSMN7R6-60XSQ	NXP	MOSFET N-CH 60V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,000	MOSFET (Metal Oxide)	60V	51.5A (Tc)	10V	4.6V @ 1mA	38.7nC @ 10V	2651pF @ 30V	±20V	-	46W (Tc)	7.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack, Isolated Tab
SI4418DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 2.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,720	MOSFET (Metal Oxide)	200V	2.3A (Ta)	6V, 10V	4V @ 250µA	30nC @ 10V	-	±20V	-	1.5W (Ta)	130 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFS11N50A	Vishay Siliconix	MOSFET N-CH 500V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,668	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4V @ 250µA	52nC @ 10V	1423pF @ 25V	±30V	-	170W (Tc)	520 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR320TR	Vishay Siliconix	MOSFET N-CH 400V 3.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock75,660	MOSFET (Metal Oxide)	400V	3.1A (Tc)	10V	4V @ 250µA	20nC @ 10V	350pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.8 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPC302N25N3X1SA1	Infineon Technologies	MOSFET N-CH 250V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	Package: Die	Stock3,920	MOSFET (Metal Oxide)	250V	1A (Tj)	10V	4V @ 270µA	-	-	-	-	-	100 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IPB50R199CPATMA1	Infineon Technologies	MOSFET N-CH 550V 17A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,112	MOSFET (Metal Oxide)	550V	17A (Tc)	10V	3.5V @ 660µA	45nC @ 10V	1800pF @ 100V	±20V	-	139W (Tc)	199 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60R460CEAUMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,336	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFN120N25	IXYS	MOSFET N-CH 250V 120A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,760	MOSFET (Metal Oxide)	250V	120A	-	-	-	-	-	-	-	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NTMS4916NR2G	ON Semiconductor	MOSFET N-CH 30V 11.4A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1376pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock405,648	MOSFET (Metal Oxide)	30V	7.8A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	1376pF @ 25V	±20V	-	890mW (Ta)	9 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI1441EDH-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4A SOT-363 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock612,624	MOSFET (Metal Oxide)	20V	4A (Tc)	1.8V, 4.5V	1V @ 250µA	33nC @ 8V	-	±10V	-	1.6W (Ta), 2.8W (Tc)	41 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-363	6-TSSOP, SC-88, SOT-363
APT56M50L	Microsemi Corporation	MOSFET N-CH 500V 56A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,984	MOSFET (Metal Oxide)	500V	56A (Tc)	10V	5V @ 2.5mA	220nC @ 10V	8800pF @ 25V	±30V	-	780W (Tc)	100 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
FQPF11P06	Fairchild/ON Semiconductor	MOSFET P-CH 60V 8.6A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock367,536	MOSFET (Metal Oxide)	60V	8.6A (Tc)	10V	4V @ 250µA	17nC @ 10V	550pF @ 25V	±25V	-	30W (Tc)	175 mOhm @ 4.3A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IPL65R130C7AUMA1	Infineon Technologies	MOSFET N-CH 650V 15A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock5,408	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 440µA	35nC @ 10V	1670pF @ 400V	±20V	-	102W (Tc)	130 mOhm @ 4.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
STQ2HNK60ZR-AP	STMicroelectronics	MOSFET N-CH 600V 0.5A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7,584	MOSFET (Metal Oxide)	600V	500mA (Tc)	10V	4.5V @ 50µA	15nC @ 10V	280pF @ 25V	±30V	-	3W (Tc)	4.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
MIC94050YM4-TR	Microchip Technology	MOSFET P-CH 6V 1.8A SOT-143 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock7,008	MOSFET (Metal Oxide)	6V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	600pF @ 5.5V	6V	-	568mW (Ta)	160 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
IRF8714PBF	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock18,384	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1020pF @ 15V	±20V	-	2.5W (Ta)	8.7 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IQE046N08LM5CGATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 47µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-3 Package / Case: 9-PowerTDFN	Package: -	Stock14,670	MOSFET (Metal Oxide)	80 V	15.6A (Ta), 99A (Tc)	4.5V, 10V	2.3V @ 47µA	38 nC @ 10 V	3250 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	4.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-3	9-PowerTDFN
IRF9542	Harris Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	15A (Tc)	10V	4V @ 250µA	90 nC @ 10 V	1100 pF @ 25 V	±20V	-	150W (Tc)	300mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFB4110PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4V @ 250µA	210 nC @ 10 V	9620 pF @ 50 V	±20V	-	370W (Tc)	4.5mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PJMF210N65EC_T0_00601	Panjit International Inc.	650V/ 390MOHM / 10A/ EASY TO DRI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock5,937	MOSFET (Metal Oxide)	650 V	19A (Tc)	10V	4V @ 250µA	34 nC @ 10 V	1412 pF @ 400 V	±30V	-	32W (Tc)	210mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
IXFH1826	IXYS	MOSFET N-CH 18A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIRA18ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 30.6A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 14.7W (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock51,216	MOSFET (Metal Oxide)	30 V	30.6A (Tc)	4.5V, 10V	2.4V @ 250µA	21.5 nC @ 10 V	1000 pF @ 15 V	+20V, -16V	-	14.7W (Tc)	8.7mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
DMTH10H025LK3Q-13	Diodes Incorporated	MOSFET N-CH 100V 51.7A TO252 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 51.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock21,795	MOSFET (Metal Oxide)	100 V	51.7A (Tc)	4.5V, 10V	3V @ 250µA	21 nC @ 10 V	1477 pF @ 50 V	±20V	-	3.1W (Ta)	22mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSZ0904NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 18A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: -	Stock44,958	MOSFET (Metal Oxide)	30 V	18A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	11 nC @ 4.5 V	1463 pF @ 15 V	±20V	Schottky Diode (Body)	2.1W (Ta), 37W (Tc)	4mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
SI2333A-TP	Micro Commercial Co	Interface FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 5.6A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	15 V	5.6A	2.5V, 4.5V	1V @ 250µA	21 nC @ 4.5 V	740 pF @ 6 V	±8V	-	1.1W	40mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3