Page 1024 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD08P06PGBTMA1
Infineon Technologies

MOSFET P-CH 60V 8.83A 3TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,036
IPB80N06S3L-06
Infineon Technologies

MOSFET N-CH 55V 80A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,056
IRL3715ZPBF
Infineon Technologies

MOSFET N-CH 20V 50A TO-220AB

Package: TO-220-3

Stock171,840
IXFC24N50Q
IXYS

MOSFET N-CH ISOPLUS220

Package: ISOPLUS220?

Stock3,600
SIE836DF-T1-E3
Vishay Siliconix

MOSFET N-CH 200V 18.3A POLARPAK

Package: 10-PolarPAK? (SH)

Stock6,800
IRL520
Vishay Siliconix

MOSFET N-CH 100V 9.2A TO-220AB

Package: TO-220-3

Stock438,000
IRF737LC
Vishay Siliconix

MOSFET N-CH 300V 6.1A TO-220AB

Package: TO-220-3

Stock222,300
IXTP2N60P
IXYS

MOSFET N-CH 600V 2A TO-220

Package: TO-220-3

Stock60,000
NVMFS4C03NWFT3G
ON Semiconductor

MOSFET N-CH 30V 31.4A SO8FL

Package: 8-PowerTDFN

Stock4,320
NTMFS4C35NT3G
ON Semiconductor

MOSFET N-CH 30V 80A SO8FL

Package: 8-PowerTDFN

Stock3,536
NTNS3A67PZT5G
ON Semiconductor

MOSFET P-CH 20V SOT883

Package: SC-101, SOT-883

Stock4,784
AON7408
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 10A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock645,636
PMPB23XNEZ
Nexperia USA Inc.

PMPB23XNE/SOT1220/REEL 7" Q1/T

Package: 6-UDFN Exposed Pad

Stock5,856
PSMN5R6-100PS,127
Nexperia USA Inc.

MOSFET N-CH 100V 100A TO220AB

Package: TO-220-3

Stock7,360
IXFN55N50F
IXYS

MOSFET N-CH 500V 55A SOT227B

Package: SOT-227-4, miniBLOC

Stock7,648
STU6NF10
STMicroelectronics

MOSFET N-CH 100V 6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock96,000
SI7430DP-T1-E3
Vishay Siliconix

MOSFET N-CH 150V 26A PPAK SO-8

Package: PowerPAK? SO-8

Stock85,296
IRFIBC40GPBF
Vishay Siliconix

MOSFET N-CH 600V 3.5A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock16,704
DMP2038USS-13
Diodes Incorporated

MOSFET P-CH 20V 6.5A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock22,350
SIHP11N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 8A TO220AB

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD08P06PGBTMA1	Infineon Technologies	MOSFET P-CH 60V 8.83A 3TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6.2V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 6.2V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,036	MOSFET (Metal Oxide)	60V	8.83A (Ta)	6.2V	4V @ 250µA	13nC @ 10V	420pF @ 25V	±20V	-	42W (Tc)	300 mOhm @ 10A, 6.2V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB80N06S3L-06	Infineon Technologies	MOSFET N-CH 55V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9417pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,056	MOSFET (Metal Oxide)	55V	80A (Tc)	5V, 10V	2.2V @ 80µA	196nC @ 10V	9417pF @ 25V	±16V	-	136W (Tc)	5.6 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3715ZPBF	Infineon Technologies	MOSFET N-CH 20V 50A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock171,840	MOSFET (Metal Oxide)	20V	50A (Tc)	4.5V, 10V	2.55V @ 250µA	11nC @ 4.5V	870pF @ 10V	±20V	-	45W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFC24N50Q	IXYS	MOSFET N-CH ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock3,600	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 4mA	135nC @ 10V	4200pF @ 25V	±20V	-	230W (Tc)	230 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
SIE836DF-T1-E3	Vishay Siliconix	MOSFET N-CH 200V 18.3A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (SH) Package / Case: 10-PolarPAK? (SH)	Package: 10-PolarPAK? (SH)	Stock6,800	MOSFET (Metal Oxide)	200V	18.3A (Tc)	10V	4.5V @ 250µA	41nC @ 10V	1200pF @ 100V	±30V	-	5.2W (Ta), 104W (Tc)	130 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (SH)	10-PolarPAK? (SH)
IRL520	Vishay Siliconix	MOSFET N-CH 100V 9.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock438,000	MOSFET (Metal Oxide)	100V	9.2A (Tc)	4V, 5V	2V @ 250µA	12nC @ 5V	490pF @ 25V	±10V	-	60W (Tc)	270 mOhm @ 5.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF737LC	Vishay Siliconix	MOSFET N-CH 300V 6.1A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock222,300	MOSFET (Metal Oxide)	300V	6.1A (Tc)	10V	4V @ 250µA	17nC @ 10V	430pF @ 25V	±30V	-	74W (Tc)	750 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP2N60P	IXYS	MOSFET N-CH 600V 2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,000	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	5V @ 250µA	7nC @ 10V	240pF @ 25V	±30V	-	55W (Tc)	5.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS4C03NWFT3G	ON Semiconductor	MOSFET N-CH 30V 31.4A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.71W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,320	MOSFET (Metal Oxide)	30V	31.4A (Ta), 143A (Tc)	4.5V, 10V	2.2V @ 250µA	45.2nC @ 10V	3071pF @ 15V	±20V	-	3.71W (Ta), 77W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C35NT3G	ON Semiconductor	MOSFET N-CH 30V 80A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 780mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,536	MOSFET (Metal Oxide)	30V	12.4A (Ta)	4.5V, 10V	2.2V @ 250µA	15nC @ 4.5V	2300pF @ 15V	±20V	-	780mW (Ta), 33W (Tc)	3.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTNS3A67PZT5G	ON Semiconductor	MOSFET P-CH 20V SOT883 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock4,784	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-883 (XDFN3) (1x0.6)	SC-101, SOT-883
AON7408	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 10A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock645,636	MOSFET (Metal Oxide)	30V	10A (Ta), 18A (Tc)	4.5V, 10V	2.6V @ 250µA	8.6nC @ 4.5V	448pF @ 15V	±20V	-	3.1W (Ta), 11W (Tc)	20 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
PMPB23XNEZ	Nexperia USA Inc.	PMPB23XNE/SOT1220/REEL 7" Q1/T FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,856	MOSFET (Metal Oxide)	20V	7A (Ta)	1.8V, 4.5V	900mV @ 250µA	17nC @ 10V	1136pF @ 10V	±12V	-	1.7W (Ta)	22 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
PSMN5R6-100PS,127	Nexperia USA Inc.	MOSFET N-CH 100V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8061pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,360	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 1mA	141nC @ 10V	8061pF @ 50V	±20V	-	306W (Tc)	5.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFN55N50F	IXYS	MOSFET N-CH 500V 55A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,648	MOSFET (Metal Oxide)	500V	55A (Tc)	10V	5.5V @ 8mA	195nC @ 10V	6700pF @ 25V	±20V	-	600W (Tc)	85 mOhm @ 27.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
STU6NF10	STMicroelectronics	MOSFET N-CH 100V 6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 3A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock96,000	MOSFET (Metal Oxide)	100V	6A (Tc)	10V	4V @ 250µA	14nC @ 10V	280pF @ 25V	±20V	-	30W (Tc)	250 mOhm @ 3A, 10V	-65°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SI7430DP-T1-E3	Vishay Siliconix	MOSFET N-CH 150V 26A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock85,296	MOSFET (Metal Oxide)	150V	26A (Tc)	8V, 10V	4.5V @ 250µA	43nC @ 10V	1735pF @ 50V	±20V	-	5.2W (Ta), 64W (Tc)	45 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRFIBC40GPBF	Vishay Siliconix	MOSFET N-CH 600V 3.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock16,704	MOSFET (Metal Oxide)	600V	3.5A (Tc)	10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	±20V	-	40W (Tc)	1.2 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
DMP2038USS-13	Diodes Incorporated	MOSFET P-CH 20V 6.5A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1496pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock22,350	MOSFET (Metal Oxide)	20V	6.5A (Ta)	2.5V, 4.5V	1.1V @ 250µA	14.4nC @ 4.5V	1496pF @ 15V	±8V	-	2.5W (Ta)	38 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIHP11N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 8A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	4V @ 250µA	42 nC @ 10 V	804 pF @ 100 V	±30V	-	78W (Tc)	450mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFH8330TR2PBF	Infineon Technologies	MOSFET N-CH 30V 14A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	17A (Ta), 56A (Tc)	-	2.35V @ 25µA	20 nC @ 10 V	1450 pF @ 25 V	-	-	-	6.6mOhm @ 20A, 10V	-	Surface Mount	PQFN (5x6)	8-PowerTDFN
G500P03IE	Goford Semiconductor	MOSFET P-CH ESD 30V 4.6A SOT-23 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: -	Package: -	Stock9,000	MOSFET (Metal Oxide)	-	4.6A (Tc)	2.5V, 4.5V, 10V	1.3V @ 250µA	13 nC @ 10 V	680 pF @ 15 V	±12V	-	-	55mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	-
SCT3022KLHRC11	Rohm Semiconductor	SICFET N-CH 1200V 95A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 427W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock4,020	SiCFET (Silicon Carbide)	1200 V	95A (Tc)	18V	5.6V @ 18.2mA	178 nC @ 18 V	2879 pF @ 800 V	+22V, -4V	-	427W	28.6mOhm @ 36A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SIHG22N60AEL-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock141	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	4V @ 250µA	82 nC @ 10 V	1757 pF @ 100 V	±30V	-	208W (Tc)	180mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SI1442DH-T1-BE3	Vishay Siliconix	MOSFET N-CH 12V 4A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	4A (Ta)	-	1V @ 250µA	33 nC @ 8 V	1010 pF @ 6 V	±8V	-	1.56W (Ta)	20mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
BUK6Y61-60PX	Nexperia USA Inc.	MOSFET P-CH 60V 25A LFPAK56 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock12,582	MOSFET (Metal Oxide)	60 V	25A (Ta)	4.5V, 10V	3V @ 250µA	30 nC @ 10 V	1060 pF @ 30 V	±20V	-	66W (Ta)	61mOhm @ 4.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
DMP3036SFV-13	Diodes Incorporated	MOSFET P-CH 30V 30A POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock8,871	MOSFET (Metal Oxide)	30 V	30A (Ta)	5V, 10V	2.5V @ 250µA	16.5 nC @ 10 V	1931 pF @ 15 V	±25V	-	2.3W (Ta)	20mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
DMTH43M8LFGQ-7	Diodes Incorporated	MOSFET N-CH 40V PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock5,343	MOSFET (Metal Oxide)	40 V	24A (Ta), 100A (Tc)	5V, 10V	2.5V @ 250µA	40.1 nC @ 10 V	2798 pF @ 20 V	±20V	-	2.62W (Ta), 65.2W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN