Page 1022 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLC4030EB
Infineon Technologies

MOSFET N-CH 100V DIE ON WAFER

Package: -

Stock3,936
AUIRL3705ZS
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,760
IRFSL3107PBF
Infineon Technologies

MOSFET N-CH 75V 195A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,760
IRFZ46ZS
Infineon Technologies

MOSFET N-CH 55V 51A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,536
3N164
Vishay Siliconix

MOSFET P-CH 30V 50MA TO-206AF

Package: TO-206AF, TO-72-4 Metal Can

Stock2,624
TK4A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.5A TO220SIS

Package: TO-220-3 Full Pack

Stock7,680
ATP207-TL-H
ON Semiconductor

MOSFET N-CH 40V 65A ATPAK

Package: ATPAK (2 leads+tab)

Stock2,064
FQU10N20TU_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,680
2SJ058200L
Panasonic Electronic Components

MOSFET P-CH 200V 2A U-G2

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,736
SIHG30N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 29A TO247AC

Package: TO-247-3

Stock4,800
VP2206N3-G-P003
Microchip Technology

MOSFET P-CH 60V 640MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2,624
STB14N80K5
STMicroelectronics

MOSFET N-CH 800V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,944
IRL3705ZSTRLPBF
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock9,852
IPP042N03LGXKSA1
Infineon Technologies

MOSFET N-CH 30V 70A TO-220-3

Package: TO-220-3

Stock15,894
FCD900N60Z
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.5A TO-252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,072
NTR4170NT1G
ON Semiconductor

MOSFET N-CH 30V 3.2A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock57,048
SCT2080KEC
Rohm Semiconductor

MOSFET N-CH 1200V 40A TO-247

Package: TO-247-3

Stock26,964
TPH3208LD
Transphorm

GAN FET 650V 20A PQFN88

Package: 4-PowerDFN

Stock19,224
STP46NF30
STMicroelectronics

MOSFET N CH 300V 42A TO-220

Package: TO-220-3

Stock5,072
BBS3002-DL-1E
ON Semiconductor

MOSFET P-CH 60V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,668

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLC4030EB	Infineon Technologies	MOSFET N-CH 100V DIE ON WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,936	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRL3705ZS	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,760	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 5V	2880pF @ 25V	±16V	-	130W (Tc)	8 mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFSL3107PBF	Infineon Technologies	MOSFET N-CH 75V 195A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,760	MOSFET (Metal Oxide)	75V	195A (Tc)	10V	4V @ 250µA	240nC @ 10V	9370pF @ 50V	±20V	-	370W (Tc)	3 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ46ZS	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,536	MOSFET (Metal Oxide)	55V	51A (Tc)	10V	4V @ 250µA	46nC @ 10V	1460pF @ 25V	±20V	-	82W (Tc)	13.6 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3N164	Vishay Siliconix	MOSFET P-CH 30V 50MA TO-206AF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375mW (Ta) Rds On (Max) @ Id, Vgs: 300 Ohm @ 100µA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	Package: TO-206AF, TO-72-4 Metal Can	Stock2,624	MOSFET (Metal Oxide)	30V	50mA (Ta)	20V	5V @ 10µA	-	3.5pF @ 15V	±30V	-	375mW (Ta)	300 Ohm @ 100µA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
TK4A60DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.5A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,680	MOSFET (Metal Oxide)	600V	3.5A (Ta)	10V	4.4V @ 1mA	11nC @ 10V	490pF @ 25V	±30V	-	-	2.2 Ohm @ 1.8A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
ATP207-TL-H	ON Semiconductor	MOSFET N-CH 40V 65A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 33A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock2,064	MOSFET (Metal Oxide)	40V	65A (Ta)	4.5V, 10V	-	54nC @ 10V	2710pF @ 20V	±20V	-	50W (Tc)	9.1 mOhm @ 33A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
FQU10N20TU_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,680	MOSFET (Metal Oxide)	200V	7.6A (Tc)	10V	5V @ 250µA	18nC @ 10V	670pF @ 25V	±30V	-	2.5W (Ta), 51W (Tc)	360 mOhm @ 3.8A, 10V	-	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
2SJ058200L	Panasonic Electronic Components	MOSFET P-CH 200V 2A U-G2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 10W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-G2 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,736	MOSFET (Metal Oxide)	200V	2A (Tc)	10V	4V @ 1mA	-	400pF @ 20V	±20V	-	1W (Ta), 10W (Tc)	2 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	U-G2	TO-252-3, DPak (2 Leads + Tab), SC-63
SIHG30N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock4,800	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	4V @ 250µA	130nC @ 10V	2600pF @ 100V	±30V	-	250W (Tc)	125 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
VP2206N3-G-P003	Microchip Technology	MOSFET P-CH 60V 640MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 640mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2,624	MOSFET (Metal Oxide)	60V	640mA (Tj)	5V, 10V	3.5V @ 10mA	-	450pF @ 25V	±20V	-	740mW (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STB14N80K5	STMicroelectronics	MOSFET N-CH 800V 12A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 445 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,944	MOSFET (Metal Oxide)	800V	12A (Tc)	10V	5V @ 100µA	22nC @ 10V	620pF @ 100V	±30V	-	130W (Tc)	445 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3705ZSTRLPBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,852	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 5V	2880pF @ 25V	±16V	-	130W (Tc)	8 mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP042N03LGXKSA1	Infineon Technologies	MOSFET N-CH 30V 70A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock15,894	MOSFET (Metal Oxide)	30V	70A (Tc)	4.5V, 10V	2.2V @ 250µA	38nC @ 10V	3900pF @ 15V	±20V	-	79W (Tc)	4.2 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
FCD900N60Z	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.5A TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,072	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	3.5V @ 250µA	17nC @ 10V	720pF @ 25V	±20V	-	52W (Tc)	900 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NTR4170NT1G	ON Semiconductor	MOSFET N-CH 30V 3.2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock57,048	MOSFET (Metal Oxide)	30V	-	2.5V, 10V	1.4V @ 250µA	4.76nC @ 4.5V	432pF @ 15V	±12V	-	480mW (Ta)	55 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SCT2080KEC	Rohm Semiconductor	MOSFET N-CH 1200V 40A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock26,964	SiCFET (Silicon Carbide)	1200V	40A (Tc)	18V	4V @ 4.4mA	106nC @ 18V	2080pF @ 800V	+22V, -6V	-	262W (Tc)	117 mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247	TO-247-3
TPH3208LD	Transphorm	GAN FET 650V 20A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 4-PowerDFN	Package: 4-PowerDFN	Stock19,224	GaNFET (Gallium Nitride)	650V	20A (Tc)	8V	2.6V @ 300µA	14nC @ 8V	760pF @ 400V	±18V	-	96W (Tc)	130 mOhm @ 13A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (8x8)	4-PowerDFN
STP46NF30	STMicroelectronics	MOSFET N CH 300V 42A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,072	MOSFET (Metal Oxide)	300V	42A (Tc)	10V	4V @ 250µA	90nC @ 10V	3200pF @ 25V	±20V	-	300W (Tc)	75 mOhm @ 17A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
BBS3002-DL-1E	ON Semiconductor	MOSFET P-CH 60V 100A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,668	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	280nC @ 10V	13200pF @ 20V	±20V	-	90W (Tc)	5.8 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GAN039-650NTBZ	Nexperia USA Inc.	650 V, 33 MOHM GALLIUM NITRIDE ( FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CCPAK1212i Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	58.5A (Ta)	10V	4.6V @ 1mA	26 nC @ 10 V	1980 pF @ 400 V	±20V	-	250W (Ta)	39mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	CCPAK1212i	12-BESOP (0.370", 9.40mm Width), Exposed Pad
SI3401A-13P	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.2A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4.2A	2.5V, 10V	1.3V @ 250µA	-	1050 pF @ 15 V	±12V	-	1.3W	60mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RJK0351DPA-03-J0B	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN2R5-40YLDX	Nexperia USA Inc.	MOSFET N-CH 40V 160A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.05V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5583 pF @ 20 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 147W (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock13,140	MOSFET (Metal Oxide)	40 V	160A (Ta)	4.5V, 10V	2.05V @ 1mA	78 nC @ 10 V	5583 pF @ 20 V	±20V	Schottky Diode (Body)	147W (Ta)	2.6mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SQS401EN-T1_BE3	Vishay Siliconix	MOSFET P-CH 40V 16A PPAK1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock322,746	MOSFET (Metal Oxide)	40 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	21.2 nC @ 4.5 V	1875 pF @ 20 V	±20V	-	62.5W (Tc)	29mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SCTWA90N65G2V	STMicroelectronics	SILICON CARBIDE POWER MOSFET 650 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 119A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 565W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: -	Stock24	SiCFET (Silicon Carbide)	650 V	119A (Tc)	18V	5V @ 1mA	157 nC @ 18 V	3380 pF @ 400 V	+22V, -10V	-	565W (Tc)	24mOhm @ 50A, 18V	-55°C ~ 200°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
IPA50R140CPXKSA1	Infineon Technologies	MOSFET N-CH 500V 23A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 930µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	23A (Tc)	10V	3.5V @ 930µA	64 nC @ 10 V	2540 pF @ 100 V	±20V	-	34W (Tc)	140mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
AOT66518L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 30A/120A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock2,511	MOSFET (Metal Oxide)	150 V	30A (Ta), 120A (Tc)	8V, 10V	3.7V @ 250µA	115 nC @ 10 V	6460 pF @ 75 V	±20V	-	10W (Ta), 375W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3