Page 1023 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF5804TRPBF
Infineon Technologies

MOSFET P-CH 40V 2.5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,041,144
IPB03N03LB
Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,560
IRF1010NSTRR
Infineon Technologies

MOSFET N-CH 55V 85A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,656
AON6372
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V DFN

Package: -

Stock2,912
2SK1339-E
Renesas Electronics America

MOSFET N-CH 900V 3A TO-3P

Package: TO-3P-3, SC-65-3

Stock21,252
BSS123W-7
Diodes Incorporated

MOSFET N-CH 100V 170MA SC70-3

Package: SC-70, SOT-323

Stock3,504
IRF644
Vishay Siliconix

MOSFET N-CH 250V 14A TO-220AB

Package: TO-220-3

Stock12,888
IPD65R400CEAUMA1
Infineon Technologies

MOSFET N-CH 650V TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,408
SIE802DF-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 60A 10-POLARPAK

Package: 10-PolarPAK? (L)

Stock16,716
RRH100P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 10A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock14,784
NVTFS4C13NWFTWG
ON Semiconductor

MOSFET N-CH 30V 40A U8FL

Package: 8-PowerWDFN

Stock3,552
STFW6N120K3
STMicroelectronics

MOSFET N-CH 1200V 3.8A TO-3PF

Package: TO-3P-3 Full Pack

Stock2,672
NDS351N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 1.1A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock540,252
PSMN2R0-30PL,127
Nexperia USA Inc.

MOSFET N-CH 30V 100A TO220AB

Package: TO-220-3

Stock31,524
CSD25481F4
Texas Instruments

MOSFET P-CH 20V 2.5A 3PICOSTAR

Package: 3-XFDFN

Stock21,822
HUF76432S3ST
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
SI0205-TP
Micro Commercial Co

N-CHANNEL MOSFET,SOT-523

Package: -

Stock17,358
SQJQ131EL-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 30 V (D-S)

Package: -

Stock10,548
UPA1820GR-9JG-E1-A
Renesas Electronics Corporation

MOSFET N-CH 20V 12A 8TSSOP

Package: -

Request a Quote
SSFQ4903
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -10A, -40V

Package: -

Stock26,895

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF5804TRPBF	Infineon Technologies	MOSFET P-CH 40V 2.5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 198 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,041,144	MOSFET (Metal Oxide)	40V	2.5A (Ta)	4.5V, 10V	3V @ 250µA	8.5nC @ 10V	680pF @ 25V	±20V	-	2W (Ta)	198 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6 Thin, TSOT-23-6
IPB03N03LB	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7624pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,560	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 100µA	59nC @ 5V	7624pF @ 15V	±20V	-	150W (Tc)	2.8 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1010NSTRR	Infineon Technologies	MOSFET N-CH 55V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,656	MOSFET (Metal Oxide)	55V	85A (Tc)	10V	4V @ 250µA	120nC @ 10V	3210pF @ 25V	±20V	-	180W (Tc)	11 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AON6372	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,912	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1339-E	Renesas Electronics America	MOSFET N-CH 900V 3A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock21,252	MOSFET (Metal Oxide)	900V	3A (Ta)	10V	-	-	425pF @ 10V	±30V	-	80W (Tc)	7 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
BSS123W-7	Diodes Incorporated	MOSFET N-CH 100V 170MA SC70-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,504	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	60pF @ 25V	±20V	-	200mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
IRF644	Vishay Siliconix	MOSFET N-CH 250V 14A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,888	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	68nC @ 10V	1300pF @ 25V	±20V	-	125W (Tc)	280 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD65R400CEAUMA1	Infineon Technologies	MOSFET N-CH 650V TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 118W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,408	MOSFET (Metal Oxide)	650V	15.1A (Tc)	10V	3.5V @ 320µA	39nC @ 10V	710pF @ 100V	±20V	Super Junction	118W (Tc)	400 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SIE802DF-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 23.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock16,716	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	2.7V @ 250µA	160nC @ 10V	7000pF @ 15V	±20V	-	5.2W (Ta), 125W (Tc)	1.9 mOhm @ 23.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
RRH100P03TB1	Rohm Semiconductor	MOSFET P-CH 30V 10A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock14,784	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	39nC @ 5V	3600pF @ 10V	±20V	-	650mW (Ta)	12.6 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
NVTFS4C13NWFTWG	ON Semiconductor	MOSFET N-CH 30V 40A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,552	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.1V @ 250µA	15.2nC @ 10V	770pF @ 15V	±20V	-	3W (Ta), 26W (Tc)	9.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
STFW6N120K3	STMicroelectronics	MOSFET N-CH 1200V 3.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock2,672	MOSFET (Metal Oxide)	1200V	6A (Tc)	10V	5V @ 100µA	34nC @ 10V	1050pF @ 100V	±30V	-	63W (Tc)	2.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
NDS351N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 1.1A SSOT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock540,252	MOSFET (Metal Oxide)	30V	1.1A (Ta)	4.5V, 10V	2V @ 250µA	3.5nC @ 5V	140pF @ 10V	±20V	-	500mW (Ta)	160 mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
PSMN2R0-30PL,127	Nexperia USA Inc.	MOSFET N-CH 30V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock31,524	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.15V @ 1mA	117nC @ 10V	6810pF @ 12V	±20V	-	211W (Tc)	2.1 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
CSD25481F4	Texas Instruments	MOSFET P-CH 20V 2.5A 3PICOSTAR FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.913nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 189pF @ 10V Vgs (Max): -12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 88 mOhm @ 500mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock21,822	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 4.5V	1.2V @ 250µA	0.913nC @ 4.5V	189pF @ 10V	-12V	-	500mW (Ta)	88 mOhm @ 500mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
HUF76432S3ST	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	59A (Tc)	4.5V, 10V	3V @ 250µA	53 nC @ 10 V	1765 pF @ 25 V	±16V	-	130W (Tc)	17mOhm @ 59A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI0205-TP	Micro Commercial Co	N-CHANNEL MOSFET,SOT-523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 200mA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock17,358	MOSFET (Metal Oxide)	50 V	200mA	2.5V, 4.5V	800mV @ 250µA	-	24 pF @ 10 V	±8V	-	830mW	4Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
SQJQ131EL-T1_GE3	Vishay Siliconix	AUTOMOTIVE P-CHANNEL 30 V (D-S) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Stock10,548	MOSFET (Metal Oxide)	30 V	280A (Tc)	4.5V, 10V	2.5V @ 250µA	731 nC @ 10 V	33050 pF @ 15 V	±20V	-	600W (Tc)	1.4mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
UPA1820GR-9JG-E1-A	Renesas Electronics Corporation	MOSFET N-CH 20V 12A 8TSSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.6mOhm @ 6A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	12A (Ta)	-	1.5V @ 1mA	27 nC @ 4 V	2020 pF @ 10 V	-	-	-	8.6mOhm @ 6A, 4.5V	-	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
SSFQ4903	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -10A, -40V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock26,895	MOSFET (Metal Oxide)	40 V	10A (Tc)	4.5V, 10V	2.5V @ 250µA	40 nC @ 4.5 V	4000 pF @ 25 V	±20V	-	4.2W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
DMN65D7LFR4-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V X2-DFN1010 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 40mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1010-4 (Type B) Package / Case: 4-XDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	260mA (Ta)	4.5V, 10V	2.5V @ 250µA	1.04 nC @ 10 V	41 pF @ 30 V	±20V	-	600mW (Ta)	5Ohm @ 40mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1010-4 (Type B)	4-XDFN Exposed Pad
AOB66620L	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	23A (Ta), 57A (Tc)	8V, 10V	3.6V @ 250µA	25 nC @ 10 V	1070 pF @ 30 V	±20V	-	8.3W (Ta), 50W (Tc)	8.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTMFS5C673NT1G	onsemi	MOSFET N-CH 60V 14A/50A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock2,427	MOSFET (Metal Oxide)	60 V	14A (Ta), 50A (Tc)	10V	4V @ 35µA	9.6 nC @ 10 V	680 pF @ 30 V	±20V	-	3.6W (Ta), 46W (Tc)	10.7mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
G3R75MT12J-TR	GeneSiC Semiconductor	1200V 75M TO-263-7 G3R SIC MOSFE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 2.7V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1545 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 196W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock17,904	SiC (Silicon Carbide Junction Transistor)	1200 V	38A (Tc)	15V, 18V	2.7V @ 10mA	47 nC @ 15 V	1545 pF @ 800 V	+22V, -10V	-	196W (Tc)	85mOhm @ 20A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SQD30N05-20L_T4GE3	Vishay Siliconix	MOSFET N-CH 55V 30A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	18 nC @ 5 V	1175 pF @ 25 V	±20V	-	50W (Tc)	20mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJW5N06A-AU_R2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.72W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	5A (Ta)	4.5V, 10V	2.5V @ 250µA	9.3 nC @ 10 V	509 pF @ 15 V	±20V	-	3.72W (Ta)	75mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPB60R125CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 18A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,685	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4.5V @ 390µA	36 nC @ 10 V	1503 pF @ 400 V	±20V	-	92W (Tc)	125mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP3018SSS-13	Diodes Incorporated	MOSFET P-CH 30V 10.5/25A 8SO T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock13,476	MOSFET (Metal Oxide)	30 V	10.5A (Ta), 25A (Tc)	4.5V, 10V	3V @ 250µA	57 nC @ 10 V	2714 pF @ 15 V	±25V	-	1.2W (Ta)	12mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)