Page 1034 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6665TR1PBF
Infineon Technologies

MOSFET N-CH 100V 4.2A DIRECTFET

Package: DirectFET? Isometric SH

Stock13,344
STP3NB100
STMicroelectronics

MOSFET N-CH 1KV 3A TO-220

Package: TO-220-3

Stock74,712
SPD06N60C3ATMA1
Infineon Technologies

MOSFET N-CH 600V 6.2A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,424
IRL530NSTRRPBF
Infineon Technologies

MOSFET N-CH 100V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,440
SISC097N24DX1SA1
Infineon Technologies

TRANSISTOR P-CH BARE DIE

Package: -

Stock2,624
APT12057B2FLLG
Microsemi Corporation

MOSFET N-CH 1200V 22A T-MAX

Package: TO-247-3 Variant

Stock4,176
NVTFS5116PLWFTAG
ON Semiconductor

MOSFET P-CH 60V 14A U8FL

Package: 8-PowerWDFN

Stock6,024
IPB65R225C7ATMA1
Infineon Technologies

MOSFET N-CH 650V 11A TO-263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,896
NTMFS4845NT1G
ON Semiconductor

MOSFET N-CH 30V 13.7A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock22,728
IXFN120N20
IXYS

MOSFET N-CH 200V 120A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,624
TN2106N3-G
Microchip Technology

MOSFET N-CH 60V 300MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock18,828
IRLR2905TRLPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock34,800
STW3N170
STMicroelectronics

N-CHANNEL 1700 V, 7 OHM TYP., 2.

Package: TO-247-3

Stock9,840
STF10NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO-220FP

Package: TO-220-3 Full Pack

Stock110,964
IRFP240PBF
Vishay Siliconix

MOSFET N-CH 200V 20A TO-247AC

Package: TO-247-3

Stock56,496
AO3442
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 1A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock318,624
BSS314PEH6327XTSA1-ML
MOSLEADER

P -30V SOT-23

Package: -

Request a Quote
RSF015N06FRATL
Rohm Semiconductor

MOSFET N-CH 60V 1.5A TUMT3

Package: -

Stock21,588
FDS9435A-NBAD008
onsemi

-30V P-CHANNEL POWERTRENCH MOSFE

Package: -

Request a Quote
IRF9543
Harris Corporation

P-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6665TR1PBF	Infineon Technologies	MOSFET N-CH 100V 4.2A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SH Package / Case: DirectFET? Isometric SH	Package: DirectFET? Isometric SH	Stock13,344	MOSFET (Metal Oxide)	100V	4.2A (Ta), 19A (Tc)	10V	5V @ 250µA	13nC @ 10V	530pF @ 25V	±20V	-	2.2W (Ta), 42W (Tc)	62 mOhm @ 5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SH	DirectFET? Isometric SH
STP3NB100	STMicroelectronics	MOSFET N-CH 1KV 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock74,712	MOSFET (Metal Oxide)	1000V	3A (Tc)	10V	4V @ 250µA	30nC @ 10V	700pF @ 25V	±30V	-	100W (Tc)	6 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPD06N60C3ATMA1	Infineon Technologies	MOSFET N-CH 600V 6.2A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-1 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,424	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	3.9V @ 260µA	31nC @ 10V	620pF @ 25V	±20V	-	74W (Tc)	750 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-1	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL530NSTRRPBF	Infineon Technologies	MOSFET N-CH 100V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,440	MOSFET (Metal Oxide)	100V	17A (Tc)	4V, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	±20V	-	3.8W (Ta), 79W (Tc)	100 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SISC097N24DX1SA1	Infineon Technologies	TRANSISTOR P-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,624	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT12057B2FLLG	Microsemi Corporation	MOSFET N-CH 1200V 22A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock4,176	MOSFET (Metal Oxide)	1200V	22A (Tc)	10V	5V @ 2.5mA	185nC @ 10V	5155pF @ 25V	±30V	-	690W (Tc)	570 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
NVTFS5116PLWFTAG	ON Semiconductor	MOSFET P-CH 60V 14A U8FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,024	MOSFET (Metal Oxide)	60V	6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1258pF @ 25V	±20V	-	3.2W (Ta), 21W (Tc)	52 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IPB65R225C7ATMA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 225 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,896	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	4V @ 240µA	20nC @ 10V	996pF @ 400V	±20V	-	63W (Tc)	225 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4845NT1G	ON Semiconductor	MOSFET N-CH 30V 13.7A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock22,728	MOSFET (Metal Oxide)	30V	13.7A (Ta), 115A (Tc)	4.5V, 10V	2.5V @ 250µA	62nC @ 11.5V	3720pF @ 12V	±16V	-	890mW (Ta), 62.5W (Tc)	2.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IXFN120N20	IXYS	MOSFET N-CH 200V 120A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,624	MOSFET (Metal Oxide)	200V	120A	10V	4V @ 8mA	360nC @ 10V	9100pF @ 25V	±20V	-	600W (Tc)	17 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
TN2106N3-G	Microchip Technology	MOSFET N-CH 60V 300MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 740mW (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock18,828	MOSFET (Metal Oxide)	60V	300mA (Tj)	4.5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	740mW (Tc)	2.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRLR2905TRLPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock34,800	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STW3N170	STMicroelectronics	N-CHANNEL 1700 V, 7 OHM TYP., 2. FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160mW Rds On (Max) @ Id, Vgs: 13 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,840	MOSFET (Metal Oxide)	1700V	2.6A (Tc)	10V	5V @ 250µA	44nC @ 10V	1100pF @ 100V	±30V	-	160mW	13 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STF10NM60N	STMicroelectronics	MOSFET N-CH 600V 10A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock110,964	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	19nC @ 10V	540pF @ 50V	±25V	-	25W (Tc)	550 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRFP240PBF	Vishay Siliconix	MOSFET N-CH 200V 20A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock56,496	MOSFET (Metal Oxide)	200V	20A (Tc)	10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	±20V	-	150W (Tc)	180 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
AO3442	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 1A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 630 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock318,624	MOSFET (Metal Oxide)	100V	1A (Ta)	4.5V, 10V	2.9V @ 250µA	6nC @ 10V	100pF @ 50V	±20V	-	1.4W (Ta)	630 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
BSS314PEH6327XTSA1-ML	MOSLEADER	P -30V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RSF015N06FRATL	Rohm Semiconductor	MOSFET N-CH 60V 1.5A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: -	Stock21,588	MOSFET (Metal Oxide)	60 V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	2 nC @ 5 V	110 pF @ 10 V	±20V	-	800mW (Ta)	290mOhm @ 1.5A, 10V	150°C	Surface Mount	TUMT3	3-SMD, Flat Leads
FDS9435A-NBAD008	onsemi	-30V P-CHANNEL POWERTRENCH MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.3A (Ta)	4.5V, 10V	3V @ 250µA	14 nC @ 10 V	528 pF @ 15 V	±25V	-	1W (Ta)	50mOhm @ 5.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRF9543	Harris Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	15A (Tc)	10V	4V @ 250µA	90 nC @ 10 V	1100 pF @ 25 V	±20V	-	150W (Tc)	300mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
TK2K2A60F-S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	3.5A (Ta)	10V	4V @ 350µA	13 nC @ 10 V	450 pF @ 300 V	±30V	-	30W (Tc)	2.2Ohm @ 1.8A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK7R0E08QM-S1X	Toshiba Semiconductor and Storage	UMOS10 TO-220AB 80V 7MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock360	MOSFET (Metal Oxide)	80 V	64A (Tc)	6V, 10V	3.5V @ 500µA	39 nC @ 10 V	2700 pF @ 40 V	±20V	-	87W (Tc)	7mOhm @ 32A, 10V	175°C	Through Hole	TO-220	TO-220-3
DMN3025LFV-7	Diodes Incorporated	MOSFET N-CH 30V 25A POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	30 V	25A (Tc)	4.5V, 10V	2V @ 250µA	9.8 nC @ 10 V	500 pF @ 15 V	±20V	-	900mW (Ta)	18mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
SIHG11N80E-GE3	Vishay Siliconix	MOSFET N-CH 800V 12A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	12A (Tc)	10V	4V @ 250µA	88 nC @ 10 V	1670 pF @ 100 V	±30V	-	179W (Tc)	440mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPW60R280E6FKSA1	Infineon Technologies	MOSFET N-CH 600V 13.8A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	3.5V @ 430µA	43 nC @ 10 V	950 pF @ 100 V	±20V	-	104W (Tc)	280mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
C3M0030090K	Wolfspeed, Inc.	SICFET N-CH 900V 73A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 600 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock6,570	SiCFET (Silicon Carbide)	900 V	73A (Tc)	15V	3.5V @ 11mA	74 nC @ 15 V	1503 pF @ 600 V	+15V, -4V	-	240W (Tc)	39mOhm @ 35A, 15V	-40°C ~ 150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
ZSPM9000AI1R	onsemi	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB12N60ET5-GE3	Vishay Siliconix	MOSFET N-CH 600V 12A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4V @ 250µA	58 nC @ 10 V	937 pF @ 100 V	±30V	-	147W (Tc)	380mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB