Page 1068 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFC4127ED
Infineon Technologies

MOSFET N-CH WAFER

Package: -

Stock3,264
PMF63UN,115
NXP

MOSFET N-CH 20V 1.8A SOT323

Package: SC-70, SOT-323

Stock141,600
AO4728
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock199,044
MCH6320-TL-E
ON Semiconductor

MOSFET P-CH 12V 3.5A MCPH6

Package: 6-SMD, Flat Leads

Stock6,064
SFP9640
Fairchild/ON Semiconductor

MOSFET P-CH 200V 11A TO-220

Package: TO-220-3

Stock18,000
SI8415DB-T1-E1
Vishay Siliconix

MOSFET P-CH 12V 5.3A 2X2 4-MFP

Package: 4-XFBGA, CSPBGA

Stock207,672
NTD78N03
ON Semiconductor

MOSFET N-CH 25V 11.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,448
NTD18N06LG
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,876
IRFR9024TRL
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,072
IRFBF30L
Vishay Siliconix

MOSFET N-CH 900V 3.6A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,640
IRFIBE30G
Vishay Siliconix

MOSFET N-CH 800V 2.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock99,852
NTR4501NST1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,288
IXFJ80N25X3
IXYS

MOSFET N-CH 250V 44A ISO TO247

Package: TO-247-3

Stock6,000
DN3135K1-G
Microchip Technology

MOSFET N-CH 350V 72MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock98,196
SI5471DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 6A 1206-8

Package: 8-SMD, Flat Lead

Stock20,628
PJD25N04V-AU_L2_002A1
Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

Package: -

Request a Quote
XP6NA3R5IT
YAGEO XSEMI

MOSFET N-CH 60V 72A TO220CFM

Package: -

Stock3,000
SCT3105KRC14
Rohm Semiconductor

SICFET N-CH 1200V 24A TO247-4L

Package: -

Stock306
MFQ1916-EVL
Venkel

MOSFET Single,DFN1006-3,20V,950m

Package: -

Request a Quote
TP65H480G4JSGB-TR
Transphorm

GANFET N-CH 650V 3.6A QFN5X6

Package: -

Stock11,784

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC4127ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,264	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMF63UN,115	NXP	MOSFET N-CH 20V 1.8A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 275mW (Ta), 1.785W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 1.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock141,600	MOSFET (Metal Oxide)	20V	1.8A (Ta)	1.8V, 4.5V	1V @ 250µA	3.3nC @ 4.5V	185pF @ 10V	±8V	-	275mW (Ta), 1.785W (Tc)	74 mOhm @ 1.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
AO4728	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4463pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock199,044	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	2.2V @ 250µA	72nC @ 10V	4463pF @ 15V	±20V	Schottky Diode (Body)	3.1W (Ta)	4.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
MCH6320-TL-E	ON Semiconductor	MOSFET P-CH 12V 3.5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock6,064	MOSFET (Metal Oxide)	12V	3.5A (Ta)	1.8V, 4.5V	1.4V @ 1mA	5.6nC @ 4.5V	405pF @ 6V	±10V	-	1.5W (Ta)	70 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-MCPH	6-SMD, Flat Leads
SFP9640	Fairchild/ON Semiconductor	MOSFET P-CH 200V 11A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 123W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock18,000	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	59nC @ 10V	1585pF @ 25V	±30V	-	123W (Tc)	500 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SI8415DB-T1-E1	Vishay Siliconix	MOSFET P-CH 12V 5.3A 2X2 4-MFP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.47W (Ta) Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock207,672	MOSFET (Metal Oxide)	12V	5.3A (Ta)	1.8V, 4.5V	1V @ 250µA	30nC @ 4.5V	-	±8V	-	1.47W (Ta)	37 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
NTD78N03	ON Semiconductor	MOSFET N-CH 25V 11.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,448	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06LG	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,876	MOSFET (Metal Oxide)	60V	18A (Ta)	5V	2V @ 250µA	22nC @ 5V	675pF @ 25V	±15V	-	2.1W (Ta), 55W (Tj)	65 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024TRL	Vishay Siliconix	MOSFET P-CH 60V 8.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,072	MOSFET (Metal Oxide)	60V	8.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	280 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFBF30L	Vishay Siliconix	MOSFET N-CH 900V 3.6A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,640	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	±20V	-	-	3.7 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFIBE30G	Vishay Siliconix	MOSFET N-CH 800V 2.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock99,852	MOSFET (Metal Oxide)	800V	2.1A (Tc)	10V	4V @ 250µA	78nC @ 10V	1300pF @ 25V	±20V	-	35W (Tc)	3 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
NTR4501NST1G	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,288	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFJ80N25X3	IXYS	MOSFET N-CH 250V 44A ISO TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFJ) Package / Case: TO-247-3	Package: TO-247-3	Stock6,000	MOSFET (Metal Oxide)	250V	44A (Tc)	10V	4.5V @ 1.5mA	83nC @ 10V	5430pF @ 25V	±20V	-	104W (Tc)	18 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFJ)	TO-247-3
DN3135K1-G	Microchip Technology	MOSFET N-CH 350V 72MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 72mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 35 Ohm @ 150mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock98,196	MOSFET (Metal Oxide)	350V	72mA (Tj)	0V	-	-	120pF @ 25V	±20V	Depletion Mode	360mW (Ta)	35 Ohm @ 150mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI5471DC-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 6A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2945pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock20,628	MOSFET (Metal Oxide)	20V	6A (Tc)	1.8V, 4.5V	1.1V @ 250µA	96nC @ 10V	2945pF @ 10V	±12V	-	2.5W (Ta), 6.3W (Tc)	20 mOhm @ 9.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
PJD25N04V-AU_L2_002A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 681 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	12A (Ta), 42A (Tc)	7V, 10V	3.5V @ 50µA	9.5 nC @ 10 V	681 pF @ 25 V	±20V	-	3W (Ta), 36W (Tc)	11.3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
XP6NA3R5IT	YAGEO XSEMI	MOSFET N-CH 60V 72A TO220CFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.92W (Ta), 32.9W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220CFM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	60 V	72A (Tc)	10V	4V @ 250µA	125 nC @ 10 V	5440 pF @ 50 V	±20V	-	1.92W (Ta), 32.9W (Tc)	3.5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220CFM	TO-220-3 Full Pack
SCT3105KRC14	Rohm Semiconductor	SICFET N-CH 1200V 24A TO247-4L FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock306	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	5.6V @ 3.81mA	51 nC @ 18 V	574 pF @ 800 V	+22V, -4V	-	134W	137mOhm @ 7.6A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
MFQ1916-EVL	Venkel	MOSFET Single,DFN1006-3,20V,950m FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: -	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	950mA (Ta)	1.2V, 4.5V	-	1.1 nC @ 4.5 V	46 pF @ 10 V	±8V	-	500mW (Ta)	300mOhm @ 500mA, 4.5V	-55°C ~ 150°C	Surface Mount	DFN1006-3	-
TP65H480G4JSGB-TR	Transphorm	GANFET N-CH 650V 3.6A QFN5X6 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 2.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 13.2W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock11,784	GaNFET (Gallium Nitride)	650 V	3.6A (Tc)	6V	2.8V @ 500µA	5 nC @ 10 V	414 pF @ 400 V	±10V	-	13.2W (Tc)	560mOhm @ 3A, 6V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IPBE65R115CFD7AATMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-11 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,424	MOSFET (Metal Oxide)	650 V	21A (Tc)	10V	4.5V @ 490µA	41 nC @ 10 V	1950 pF @ 400 V	±20V	-	114W (Tc)	115mOhm @ 9.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-7-11	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AUIRFR8403TRLARMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-901\|DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	3.9V @ 100µA	99 nC @ 10 V	3171 pF @ 25 V	±20V	-	99W (Tc)	3.1mOhm @ 76A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-901\|DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJ457EP-T2_GE3	Vishay Siliconix	P-CHANNEL 60-V (D-S) 175C MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock26,055	MOSFET (Metal Oxide)	60 V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	100 nC @ 10 V	3400 pF @ 25 V	±20V	-	68W (Tc)	25mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
MCAC60N150Y-TP	Micro Commercial Co	MCAC60N150Y-TP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	60A (Tc)	10V	4V @ 250µA	27 nC @ 10 V	2275 pF @ 75 V	±20V	-	125W	19mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
HUF75925P3	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 275mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	4V @ 250µA	78 nC @ 20 V	1030 pF @ 25 V	±20V	-	100W (Tc)	275mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPP018N10N5XKSA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 205A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock210	MOSFET (Metal Oxide)	100 V	205A (Tc)	6V, 10V	3.8V @ 270µA	210 nC @ 10 V	16000 pF @ 50 V	±20V	-	3.8W (Ta), 375W (Tc)	1.83mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
TSM220NB06CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 8A/35A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1454 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock29,022	MOSFET (Metal Oxide)	60 V	8A (Ta), 35A (Tc)	10V	4V @ 250µA	23 nC @ 10 V	1454 pF @ 30 V	±20V	-	3.1W (Ta), 68W (Tc)	22mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
IGO60R042D1AUMA2	Infineon Technologies	GAN HV FET Type: - Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-85 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	Package: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-DSO-20-85	20-PowerSOIC (0.433", 11.00mm Width)