Page 1072 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF1902GPBF
Infineon Technologies

MOSFET N-CH 20V 4.2A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,616
IXTH21N50Q
IXYS

MOSFET N-CH TO-247

Package: TO-247-3

Stock7,216
AO7403_001
Alpha & Omega Semiconductor Inc.

MOSFET P-CH SC70-3

Package: SC-70, SOT-323

Stock4,032
AOD496A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 11A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,184
NP60N04MUG-S18-AY
Renesas Electronics America

MOSFET N-CH 40V 60A TO-220

Package: TO-220-3

Stock6,000
NTMFS4825NFET3G
ON Semiconductor

MOSFET N-CH 30V 171A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,192
BUK9608-55,118
NXP

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,856
IRLW610ATM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.3A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,864
STP60NE06L-16
STMicroelectronics

MOSFET N-CH 60V 60A TO-220

Package: TO-220-3

Stock900,012
IXTH64N10L2
IXYS

MOSFET N-CH 100V 64A TO-247

Package: TO-247-3

Stock3,168
NVMFS6B14NLT3G
ON Semiconductor

MOSFET N-CH 100V 11A 5DFN

Package: 8-PowerTDFN, 5 Leads

Stock6,560
NVMFS6B85NLWFT1G
ON Semiconductor

MOSFET N-CH 100V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,768
SFT1345-H
ON Semiconductor

MOSFET P-CH 100V 11A TP

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,504
BUK9E08-55B,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,704
STB10NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock58,176
FCPF4300N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 1.6A TO220-3

Package: TO-220-3 Full Pack

Stock18,948
TPN13008NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 40A 8TSON

Package: 8-PowerVDFN

Stock51,828
SIHG15N80AEF-GE3
Vishay Siliconix

EF SERIES POWER MOSFET WITH FAST

Package: -

Stock1,419
NVHL040N65S3F
onsemi

MOSFET N-CH 650V 65A TO247-3

Package: -

Stock750
RJK0230DPA-WS-J5A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF1902GPBF	Infineon Technologies	MOSFET N-CH 20V 4.2A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,616	MOSFET (Metal Oxide)	20V	4.2A (Ta)	-	700mV @ 250µA	7.5nC @ 4.5V	310pF @ 15V	-	-	-	85 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXTH21N50Q	IXYS	MOSFET N-CH TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,216	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 250µA	190nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	250 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXTH)	TO-247-3
AO7403_001	Alpha & Omega Semiconductor Inc.	MOSFET P-CH SC70-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 470 mOhm @ 700mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock4,032	MOSFET (Metal Oxide)	20V	700mA (Ta)	1.8V, 4.5V	900mV @ 250µA	1.44nC @ 4.5V	114pF @ 10V	±8V	-	350mW (Ta)	470 mOhm @ 700mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70 (SOT323)	SC-70, SOT-323
AOD496A	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 11A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,184	MOSFET (Metal Oxide)	30V	11A (Ta), 57A (Tc)	4.5V, 10V	2.2V @ 250µA	18nC @ 10V	770pF @ 15V	±20V	-	2.3W (Ta), 50W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NP60N04MUG-S18-AY	Renesas Electronics America	MOSFET N-CH 40V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,000	MOSFET (Metal Oxide)	40V	60A (Tc)	10V	4V @ 250µA	60nC @ 10V	3200pF @ 25V	±20V	-	1.8W (Ta), 88W (Tc)	6.3 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-220	TO-220-3
NTMFS4825NFET3G	ON Semiconductor	MOSFET N-CH 30V 171A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta), 96.2W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,192	MOSFET (Metal Oxide)	30V	17A (Ta), 171A (Tc)	4.5V, 10V	2.5V @ 1mA	40.2nC @ 4.5V	5660pF @ 15V	±20V	-	950mW (Ta), 96.2W (Tc)	2 mOhm @ 22A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
BUK9608-55,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,856	MOSFET (Metal Oxide)	55V	75A (Tc)	5V	2V @ 1mA	-	6900pF @ 25V	±10V	-	187W (Tc)	8 mOhm @ 25A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLW610ATM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.3A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.65A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,864	MOSFET (Metal Oxide)	200V	3.3A (Tc)	5V	2V @ 250µA	9nC @ 5V	240pF @ 25V	±20V	-	3.1W (Ta), 33W (Tc)	1.5 Ohm @ 1.65A, 5V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP60NE06L-16	STMicroelectronics	MOSFET N-CH 60V 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock900,012	MOSFET (Metal Oxide)	60V	60A (Tc)	5V, 10V	2.5V @ 250µA	70nC @ 5V	4150pF @ 25V	±15V	-	150W (Tc)	14 mOhm @ 30A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTH64N10L2	IXYS	MOSFET N-CH 100V 64A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,168	MOSFET (Metal Oxide)	100V	64A (Tc)	10V	4.5V @ 250µA	100nC @ 10V	3620pF @ 25V	±20V	-	357W (Tc)	32 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
NVMFS6B14NLT3G	ON Semiconductor	MOSFET N-CH 100V 11A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,560	MOSFET (Metal Oxide)	100V	11A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 4.5V	1680pF @ 25V	±16V	-	3.8W (Ta), 94W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS6B85NLWFT1G	ON Semiconductor	MOSFET N-CH 100V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,768	MOSFET (Metal Oxide)	100V	5.6A (Ta), 19A (Tc)	4.5V, 10V	2.4V @ 250µA	7.9nC @ 10V	480pF @ 25V	±16V	-	3.5W (Ta), 42W (Tc)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SFT1345-H	ON Semiconductor	MOSFET P-CH 100V 11A TP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 275 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,504	MOSFET (Metal Oxide)	100V	11A (Ta)	4V, 10V	-	21nC @ 10V	1020pF @ 20V	±20V	-	1W (Ta), 35W (Tc)	275 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TP	TO-251-3 Short Leads, IPak, TO-251AA
BUK9E08-55B,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 203W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,704	MOSFET (Metal Oxide)	55V	75A (Tc)	5V, 10V	2V @ 1mA	45nC @ 5V	5280pF @ 25V	±15V	-	203W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STB10NK60ZT4	STMicroelectronics	MOSFET N-CH 600V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock58,176	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	70nC @ 10V	1370pF @ 25V	±30V	-	115W (Tc)	750 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCPF4300N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 1.6A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,948	MOSFET (Metal Oxide)	800V	1.6A (Tc)	10V	4.5V @ 160µA	8.8nC @ 10V	355pF @ 100V	±20V	-	19.2W (Tc)	4.3 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
TPN13008NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 40A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock51,828	MOSFET (Metal Oxide)	80V	18A (Tc)	10V	4V @ 200µA	18nC @ 10V	1600pF @ 40V	±20V	-	700mW (Ta), 42W (Tc)	13.3 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
SIHG15N80AEF-GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock1,419	MOSFET (Metal Oxide)	800 V	13A (Tc)	10V	4V @ 250µA	54 nC @ 10 V	1128 pF @ 100 V	±30V	-	156W (Tc)	350mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
NVHL040N65S3F	onsemi	MOSFET N-CH 650V 65A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock750	MOSFET (Metal Oxide)	650 V	65A (Tc)	10V	5V @ 2.1mA	153 nC @ 10 V	5875 pF @ 400 V	±30V	-	446W (Tc)	40mOhm @ 32.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
RJK0230DPA-WS-J5A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQ2303ES-T1_BE3	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock28,008	MOSFET (Metal Oxide)	30 V	2.5A (Tc)	4.5V, 10V	2.5V @ 250µA	6.8 nC @ 10 V	210 pF @ 25 V	±20V	-	1.9W (Tc)	170mOhm @ 1.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMN3732UQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	1A (Ta)	1.8V, 4.5V	0.95V @ 250µA	0.9 nC @ 4.5 V	40.8 pF @ 25 V	±8V	-	420mW (Ta)	460mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRF831	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	450 V	4.5A (Tc)	10V	4V @ 250µA	32 nC @ 10 V	600 pF @ 25 V	±20V	-	75W (Tc)	1.5Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N7002E-7-G	Diodes Incorporated	MOSFET N-CH 60V SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTY02N120P-TRL	IXYS	MOSFET N-CH 1200V 200MA TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	4V @ 100µA	4.7 nC @ 10 V	104 pF @ 25 V	±20V	-	33W (Tc)	75Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCQ4407C-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Tj) Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A	4.5V, 10V	2V @ 250µA	36 nC @ 10 V	1735 pF @ 15 V	±20V	-	2W (Tj)	13mOhm @ 12A, 10V	-55°C ~ 150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SQ4005EY-T1_BE3	Vishay Siliconix	MOSFET P-CHANNEL 12V 15A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock4,350	MOSFET (Metal Oxide)	12 V	15A (Tc)	2.5V, 4.5V	1V @ 250µA	38 nC @ 4.5 V	3600 pF @ 6 V	±8V	-	6W (Tc)	22mOhm @ 13.5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMFS002N10MCLT1G	onsemi	PTNG 100V LL SO8FL HE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 175A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 351µA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 189W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock153	MOSFET (Metal Oxide)	100 V	22A (Ta), 175A (Tc)	4.5V, 10V	3V @ 351µA	97 nC @ 10 V	7200 pF @ 50 V	±20V	-	3W (Ta), 189W (Tc)	2.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads