Page 1069 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6722STR1PBF
Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

Package: DirectFET? Isometric ST

Stock2,000
IRFU3706-701PBF
Infineon Technologies

MOSFET N-CH 20V 75A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,664
IRLR7807ZTR
Infineon Technologies

MOSFET N-CH 30V 43A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock34,920
NDT01N60T1G
ON Semiconductor

MOSFET N-CH 600V 0.4A SOT223

Package: TO-261-4, TO-261AA

Stock13,020
BS170G
ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock24,288
FQP6N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 5.5A TO-220

Package: TO-220-3

Stock199,464
ZXMN3A02X8TA
Diodes Incorporated

MOSFET N-CH 30V 5.3A 8-MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock15,420
IPL65R210CFDAUMA1
Infineon Technologies

MOSFET N-CH 4VSON

Package: 4-PowerTSFN

Stock2,448
IPL65R310E6AUMA1
Infineon Technologies

MOSFET N-CH 4VSON

Package: 4-PowerTSFN

Stock2,128
IXTT8P50
IXYS

MOSFET P-CH 500V 8A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,656
NTMFS6B05NT1G
ON Semiconductor

MOSFET N-CH 100V 16A SO8FL

Package: 8-PowerTDFN

Stock7,376
IXTP08N100P
IXYS

MOSFET N-CH 1000V 800MA TO-220

Package: TO-220-3

Stock2,400
IRF530STRRPBF
Vishay Siliconix

MOSFET N-CH 100V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock72,024
NVGS4111PT1G
ON Semiconductor

MOSFET P-CH 30V 3.7A 6TSOP

Package: SOT-23-6

Stock4,640
STP45NF3LL
STMicroelectronics

MOSFET N-CH 30V 45A TO-220

Package: TO-220-3

Stock510,852
RQ6E035ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT

Package: SOT-23-6 Thin, TSOT-23-6

Stock36,360
FQU5N50CTU_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4A

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock38,502
DMN30H4D0LFDE-7
Diodes Incorporated

MOSFET N-CH 300V .55A 6UDFN

Package: 6-UDFN Exposed Pad

Stock144,000
IPB65R150CFDATMA1
Infineon Technologies

MOSFET N-CH 650V 22.4A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,974
IRF6616TRPBF
Infineon Technologies

MOSFET N-CH 40V 19A DIRECTFET

Package: DirectFET? Isometric MX

Stock15,792

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6722STR1PBF	Infineon Technologies	MOSFET N-CH 30V 13A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock2,000	MOSFET (Metal Oxide)	30V	13A (Ta), 58A (Tc)	4.5V, 10V	2.4V @ 50µA	17nC @ 4.5V	1320pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	7.3 mOhm @ 13A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRFU3706-701PBF	Infineon Technologies	MOSFET N-CH 20V 75A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,664	MOSFET (Metal Oxide)	20V	75A (Tc)	2.8V, 10V	2V @ 250µA	35nC @ 4.5V	2410pF @ 10V	±12V	-	88W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRLR7807ZTR	Infineon Technologies	MOSFET N-CH 30V 43A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock34,920	MOSFET (Metal Oxide)	30V	43A (Tc)	4.5V, 10V	2.25V @ 250µA	11nC @ 4.5V	780pF @ 15V	±20V	-	40W (Tc)	13.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NDT01N60T1G	ON Semiconductor	MOSFET N-CH 600V 0.4A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock13,020	MOSFET (Metal Oxide)	600V	400mA (Tc)	10V	3.7V @ 50µA	7.2nC @ 10V	160pF @ 25V	±30V	-	2.5W (Tc)	8.5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
BS170G	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock24,288	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FQP6N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock199,464	MOSFET (Metal Oxide)	250V	5.5A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	300pF @ 25V	±30V	-	63W (Tc)	1 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
ZXMN3A02X8TA	Diodes Incorporated	MOSFET N-CH 30V 5.3A 8-MSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock15,420	MOSFET (Metal Oxide)	30V	5.3A (Ta)	4.5V, 10V	1V @ 250µA	26.8nC @ 10V	1400pF @ 25V	±20V	-	1.1W (Ta)	25 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IPL65R210CFDAUMA1	Infineon Technologies	MOSFET N-CH 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 7.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock2,448	MOSFET (Metal Oxide)	650V	16.6A (Tc)	10V	4.5V @ 700µA	68nC @ 10V	1850pF @ 100V	±20V	-	151W (Tc)	210 mOhm @ 7.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IPL65R310E6AUMA1	Infineon Technologies	MOSFET N-CH 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock2,128	MOSFET (Metal Oxide)	650V	13.1A (Tc)	10V	3.5V @ 400µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	310 mOhm @ 4.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	Thin-Pak (8x8)	4-PowerTSFN
IXTT8P50	IXYS	MOSFET P-CH 500V 8A TO-268 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,656	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	5V @ 250µA	130nC @ 10V	3400pF @ 25V	±20V	-	180W (Tc)	1.2 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NTMFS6B05NT1G	ON Semiconductor	MOSFET N-CH 100V 16A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,376	MOSFET (Metal Oxide)	100V	16A (Ta), 104A (Tc)	6V, 10V	4V @ 250µA	44nC @ 10V	3100pF @ 50V	±20V	-	3.3W (Ta), 138W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IXTP08N100P	IXYS	MOSFET N-CH 1000V 800MA TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,400	MOSFET (Metal Oxide)	1000V	800mA (Tc)	10V	4V @ 50µA	11.3nC @ 10V	240pF @ 25V	±20V	-	42W (Tc)	20 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF530STRRPBF	Vishay Siliconix	MOSFET N-CH 100V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock72,024	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	26nC @ 10V	670pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	160 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVGS4111PT1G	ON Semiconductor	MOSFET P-CH 30V 3.7A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock4,640	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	3V @ 250µA	32nC @ 10V	750pF @ 15V	±20V	-	630mW (Ta)	60 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
STP45NF3LL	STMicroelectronics	MOSFET N-CH 30V 45A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 22.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock510,852	MOSFET (Metal Oxide)	30V	45A (Tc)	4.5V, 10V	1V @ 250µA	17nC @ 5V	800pF @ 25V	±16V	-	70W (Tc)	18 mOhm @ 22.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
RQ6E035ATTCR	Rohm Semiconductor	MOSFET P-CH 30V 3.5A TSMT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock36,360	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4.5V, 10V	2.5V @ 1mA	10nC @ 10V	475pF @ 15V	±20V	-	1.25W (Ta)	50 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
FQU5N50CTU_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock38,502	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	4V @ 250µA	24nC @ 10V	625pF @ 25V	±30V	-	2.5W (Ta), 48W (Tc)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
DMN30H4D0LFDE-7	Diodes Incorporated	MOSFET N-CH 300V .55A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock144,000	MOSFET (Metal Oxide)	300V	550mA (Ta)	2.7V, 10V	2.8V @ 250µA	7.6nC @ 10V	187.3pF @ 25V	±20V	-	630mW (Ta)	4 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
IPB65R150CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 22.4A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,974	MOSFET (Metal Oxide)	650V	22.4A (Tc)	10V	4.5V @ 900µA	86nC @ 10V	2340pF @ 100V	±20V	-	195.3W (Tc)	150 mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6616TRPBF	Infineon Technologies	MOSFET N-CH 40V 19A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock15,792	MOSFET (Metal Oxide)	40V	19A (Ta), 106A (Tc)	4.5V, 10V	2.25V @ 250µA	44nC @ 4.5V	3765pF @ 20V	±20V	-	2.8W (Ta), 89W (Tc)	5 mOhm @ 19A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
FDMC5614P	Fairchild/ON Semiconductor	MOSFET P-CH 60V 5.7A POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 13.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock104,856	MOSFET (Metal Oxide)	60V	5.7A (Ta), 13.5A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	1055pF @ 30V	±20V	-	2.1W (Ta), 42W (Tc)	100 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3), Power33	8-PowerWDFN
DMTH10H009LPSQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	15A (Ta), 91A (Tc)	4.5V, 10V	2.5V @ 250µA	40.2 nC @ 10 V	2309 pF @ 50 V	±20V	-	1.5W (Ta), 100W (Tc)	8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
CMS07P10V8-HF	Comchip Technology	MOSFET P-CH 100V 2.2A/7A PRPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PR-PAK (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	2.2A (Ta), 7A (Tc)	-	4V @ 250µA	16 nC @ 10 V	680 pF @ 15 V	±20V	-	2.5W (Ta), 25W (Tc)	260mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PR-PAK (3x3)	8-PowerVDFN
AOTF360A70L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 12A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29.5W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Stock37,506	MOSFET (Metal Oxide)	700 V	12A (Tj)	10V	4V @ 250µA	22.5 nC @ 10 V	1360 pF @ 100 V	±20V	-	29.5W (Tc)	360mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
ISC0702NLSATMA1	Infineon Technologies	MOSFET N-CH 60V 23A/135A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 38µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock25,152	MOSFET (Metal Oxide)	60 V	23A (Ta), 135A (Tc)	4.5V, 10V	2.3V @ 38µA	56 nC @ 10 V	3500 pF @ 30 V	±20V	-	3W (Ta), 100W (Tc)	2.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
TSM9434CS	Taiwan Semiconductor Corporation	-20V, -6.4A, SINGLE P-CHANNEL PO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.4A (Tc)	2.5V, 4.5V	1V @ 250µA	19 nC @ 4.5 V	1020 pF @ 10 V	±8V	-	2.5W (Ta)	40mOhm @ 6.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SI2318CDS-T1-BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock7,914	MOSFET (Metal Oxide)	40 V	4.3A (Ta), 5.6A (Tc)	4.5V, 10V	2.5V @ 250µA	9 nC @ 10 V	340 pF @ 20 V	±20V	-	1.25W (Ta), 2.1W (Tc)	42mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FCPF380N60-F152	Fairchild Semiconductor	600V, N-CHANNEL, MOSFET, TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10.2A (Tc)	10V	3.5V @ 250µA	40 nC @ 10 V	1665 pF @ 25 V	±20V	-	31W (Tc)	380mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack