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Infineon Technologies |
MOSFET N-CH 25V 29A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Package: DirectFET? Isometric MX |
Stock7,472 |
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MOSFET (Metal Oxide) | 25V | 29A (Ta), 166A (Tc) | 4.5V, 10V | 2.4V @ 100µA | 44nC @ 4.5V | 3890pF @ 13V | ±20V | - | 2.8W (Ta), 89W (Tc) | 2.1 mOhm @ 29A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock10,488 |
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MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | ±16V | - | 1W (Ta) | 45 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 35A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock266,220 |
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MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 68W (Tc) | 31 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 44A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,952 |
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MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1300pF @ 25V | ±20V | - | 107W (Tc) | 27 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 10A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,560 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5V @ 250µA | 35nC @ 10V | 1346pF @ 100V | ±30V | - | 43W (Tc) | 700 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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Package: 8-SOIC (0.173", 4.40mm Width) |
Stock7,248 |
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MOSFET (Metal Oxide) | 40V | 7.5A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 11nC @ 10V | 650pF @ 10V | ±20V | - | 1W (Ta) | 27 mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 10220pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,392 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 95nC @ 5V | 10220pF @ 25V | ±15V | - | 300W (Tc) | 3.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,904 |
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MOSFET (Metal Oxide) | 40V | 700mA (Tj) | 5V, 10V | 1.6V @ 1mA | - | 190pF @ 20V | ±20V | - | 740mW (Ta) | 750 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Nexperia USA Inc. |
MOSFET P-CH 30V 300MA 3DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-DFN1006B (0.6x1)
- Package / Case: 3-XFDFN
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Package: 3-XFDFN |
Stock5,856 |
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MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 0.72nC @ 4.5V | 46pF @ 15V | ±8V | - | 360mW (Ta), 2.7W (Tc) | 4.1 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006B (0.6x1) | 3-XFDFN |
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Vishay Siliconix |
MOSFET N-CH 200V 35.4A SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 31.9 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock3,744 |
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MOSFET (Metal Oxide) | 200V | 35.4A (Tc) | 7.5V, 10V | 4V @ 250µA | 38nC @ 10V | 1380pF @ 100V | ±20V | - | 104W (Tc) | 31.9 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±30V
- FET Feature: Current Sensing
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,536 |
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MOSFET (Metal Oxide) | 900V | 6A | 10V | 5V @ 100µA | - | - | ±30V | Current Sensing | - | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 11A 8-HUML
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUML2020L8 (2x2)
- Package / Case: 8-PowerUDFN
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Package: 8-PowerUDFN |
Stock3,472 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2V @ 250µA | 24nC @ 10V | 1200pF @ 15V | ±20V | - | 2W (Ta) | 11.1 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 6-HUML2020L8 (2x2) | 8-PowerUDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 6.5A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock22,422 |
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MOSFET (Metal Oxide) | 100V | 6.5A (Ta), 26A (Tc) | 7V, 10V | 4V @ 250µA | 34nC @ 10V | 2200pF @ 50V | ±25V | - | 2W (Ta), 35W (Tc) | 25 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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IXYS |
MOSFET N-CH 600V 70A TO247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXKH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock14,712 |
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MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 3.5V @ 3mA | 190nC @ 10V | 6800pF @ 100V | ±20V | Super Junction | - | 45 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock46,596 |
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MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4V @ 250µA | 81nC @ 10V | 1910pF @ 25V | ±30V | - | 250W (Tc) | 450 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 44.5A/120A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 44.5A (Ta), 120A (Tc) | 8V, 10V | 3.5V @ 250µA | 110 nC @ 10 V | 5300 pF @ 30 V | ±20V | - | 8.3W (Ta), 260W (Tc) | 2.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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onsemi |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V TSOT26 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 4.1A (Ta) | 4.5V, 10V | 3V @ 250µA | 21 nC @ 10 V | 1190 pF @ 30 V | ±20V | - | 900mW (Ta) | 48mOhm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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MOSLEADER |
P -20V -4.6A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Panasonic Electronic Components |
MOSFET P-CH 12V 2.6A ULGA004
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 2A, 4.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: ULGA004-W-1010-RA01
- Package / Case: 4-XFLGA, CSP
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Package: - |
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MOSFET (Metal Oxide) | 12 V | 2.6A (Ta) | 1.5V, 4.5V | 1V @ 2mA | 10.7 nC @ 4.5 V | 814 pF @ 10 V | ±8V | - | 370mW (Ta) | 51mOhm @ 2A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | ULGA004-W-1010-RA01 | 4-XFLGA, CSP |
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onsemi |
MOSFET N-CH 40V 67A/433A 8DFNW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.9W (Ta), 205W (Tc)
- Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 67A (Ta), 433A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 205 nC @ 10 V | 12238 pF @ 25 V | ±20V | - | 4.9W (Ta), 205W (Tc) | 0.63mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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Infineon Technologies |
SIC_DISCRETE
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 109W (Tc)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-11
- Package / Case: TO-247-4
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Package: - |
Stock150 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 17A (Tc) | 18V, 20V | 5.1V @ 1.5mA | 14 nC @ 20 V | 350 pF @ 800 V | +23V, -5V | - | 109W (Tc) | 200mOhm @ 5A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
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Qorvo |
MOSFET N-CH 650V 31A TO247-3
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock36,543 |
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- | 650 V | 31A (Tc) | 12V | 6V @ 10mA | 51 nC @ 15 V | 1500 pF @ 100 V | ±25V | - | 190W (Tc) | 100mOhm @ 20A, 12V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Renesas Electronics Corporation |
TRANSISTOR
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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- | - | 20A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 500V 13A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | 773 pF @ 100 V | ±20V | - | 92W (Tc) | 280mOhm @ 4.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Microchip Technology |
RH MOSFET 150V U3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U3 (SMD-0.5)
- Package / Case: 3-SMD, No Lead
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 19A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | 2140 pF @ 25 V | ±20V | - | 75W (Tc) | 88mOhm @ 12A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | U3 (SMD-0.5) | 3-SMD, No Lead |
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Littelfuse Inc. |
SICFET N-CH 1200V 39A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | 20V | 4V @ 10mA | 95 nC @ 20 V | 1825 pF @ 800 V | +22V, -6V | - | 179W (Tc) | 100mOhm @ 20A, 20V | -55°C ~ 150°C | Through Hole | TO-247AD | TO-247-3 |
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