Page 1071 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7769L2TR1PBF
Infineon Technologies

MOSFET N-CH 100V 375A DIRECTFET

Package: DirectFET? Isometric L8

Stock7,184
SPB07N60S5ATMA1
Infineon Technologies

MOSFET N-CH 600V 7.3A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,128
SI4858DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock672,888
SI7483ADP-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 14A PPAK SO-8

Package: PowerPAK? SO-8

Stock14,784
MMBF2202PT1G
ON Semiconductor

MOSFET P-CH 20V 0.3A SOT323

Package: SC-70, SOT-323

Stock3,167,004
BUK7506-55B,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock3,216
IXFR30N60P
IXYS

MOSFET N-CH 600V 15A ISOPLUS247

Package: ISOPLUS247?

Stock3,600
NVMFS5C604NLT1G
ON Semiconductor

MOSFET N-CH 60V 40A SO8FL

Package: 8-PowerTDFN

Stock3,808
MIC94030BM4 TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

Package: TO-253-4, TO-253AA

Stock80,100
AON6756
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 47A DFN5X6

Package: 8-PowerSMD, Flat Leads

Stock2,064
BSP297H6327XTSA1
Infineon Technologies

MOSFET N-CH 200V 660MA SOT-223

Package: TO-261-4, TO-261AA

Stock4,272
IXFN60N60
IXYS

MOSFET N-CH 600V 60A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,204
NX7002BKMYL
Nexperia USA Inc.

MOSFET N-CH 60V SGL XQFN3

Package: SC-101, SOT-883

Stock5,680
FDMC8878_F126
Fairchild/ON Semiconductor

MOSFET N-CH 30V PWR33

Package: 8-PowerWDFN

Stock3,760
TK11P65W,RQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 11.1A DPAK-0S

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock238,692
SQS460EN-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 8A

Package: PowerPAK? 1212-8

Stock29,394
DMP3010LK3Q-13
Diodes Incorporated

MOSFET P-CH 30V 17A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock44,448
SSM3J378R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

Package: -

Stock42,024
UPA2717GR-E1-AT
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

Package: -

Request a Quote
2SK669
Sanyo

N-CHANNEL MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7769L2TR1PBF	Infineon Technologies	MOSFET N-CH 100V 375A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock7,184	MOSFET (Metal Oxide)	100V	375A (Tc)	10V	4V @ 250µA	300nC @ 10V	11560pF @ 25V	±20V	-	3.3W (Ta), 125W (Tc)	3.5 mOhm @ 74A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
SPB07N60S5ATMA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,128	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	5.5V @ 350µA	35nC @ 10V	970pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4858DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 5.25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock672,888	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	1V @ 250µA (Min)	40nC @ 4.5V	-	±20V	-	1.6W (Ta)	5.25 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7483ADP-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 14A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock14,784	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	3V @ 250µA	180nC @ 10V	-	±20V	-	1.9W (Ta)	5.7 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
MMBF2202PT1G	ON Semiconductor	MOSFET P-CH 20V 0.3A SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,167,004	MOSFET (Metal Oxide)	20V	300mA (Ta)	4.5V, 10V	2.4V @ 250µA	2.7nC @ 10V	50pF @ 5V	±20V	-	150mW (Ta)	2.2 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
BUK7506-55B,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,216	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	64nC @ 10V	5100pF @ 25V	±20V	-	254W (Tc)	6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFR30N60P	IXYS	MOSFET N-CH 600V 15A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,600	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	5V @ 4mA	85nC @ 10V	3820pF @ 25V	±30V	-	166W (Tc)	250 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
NVMFS5C604NLT1G	ON Semiconductor	MOSFET N-CH 60V 40A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,808	MOSFET (Metal Oxide)	60V	40A (Ta), 287A (Tc)	4.5V, 10V	2V @ 250µA	120nC @ 10V	8900pF @ 25V	±20V	-	3.9W (Ta), 200W (Tc)	1.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
MIC94030BM4 TR	Microchip Technology	MOSFET P-CH 16V 1A SOT-143 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V Vgs (Max): 16V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock80,100	MOSFET (Metal Oxide)	16V	1A (Ta)	2.7V, 10V	1.4V @ 250µA	-	100pF @ 12V	16V	-	568mW (Ta)	450 mOhm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
AON6756	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 47A DFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2796pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 7.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock2,064	MOSFET (Metal Oxide)	30V	47A (Ta), 36A (Tc)	4.5V, 10V	2.4V @ 250µA	64nC @ 10V	2796pF @ 15V	±20V	Schottky Diode (Body)	7.3W (Ta), 83W (Tc)	2.4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
BSP297H6327XTSA1	Infineon Technologies	MOSFET N-CH 200V 660MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 357pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,272	MOSFET (Metal Oxide)	200V	660mA (Ta)	4.5V, 10V	1.8V @ 400µA	16.1nC @ 10V	357pF @ 25V	±20V	-	1.8W (Ta)	1.8 Ohm @ 660mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IXFN60N60	IXYS	MOSFET N-CH 600V 60A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,204	MOSFET (Metal Oxide)	600V	60A	10V	4.5V @ 8mA	380nC @ 10V	15000pF @ 25V	±20V	-	700W (Tc)	75 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NX7002BKMYL	Nexperia USA Inc.	MOSFET N-CH 60V SGL XQFN3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock5,680	MOSFET (Metal Oxide)	60V	350mA (Ta)	5V, 10V	2.1V @ 250µA	1nC @ 10V	23.6pF @ 10V	±20V	-	350mW (Ta), 3.1W (Tc)	2.8 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
FDMC8878_F126	Fairchild/ON Semiconductor	MOSFET N-CH 30V PWR33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,760	MOSFET (Metal Oxide)	30V	9.6A (Ta), 16.5A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1230pF @ 15V	±20V	-	2.1W (Ta), 31W (Tc)	14 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
TK11P65W,RQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 11.1A DPAK-0S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock238,692	MOSFET (Metal Oxide)	650V	11.1A (Ta)	10V	3.5V @ 450µA	25nC @ 10V	890pF @ 300V	±30V	-	100W (Tc)	440 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SQS460EN-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 8A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock29,394	MOSFET (Metal Oxide)	60V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 10V	755pF @ 25V	±20V	-	39W (Tc)	36 mOhm @ 5.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
DMP3010LK3Q-13	Diodes Incorporated	MOSFET P-CH 30V 17A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6234pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock44,448	MOSFET (Metal Oxide)	30V	17A (Ta)	4.5V, 10V	2.1V @ 250µA	59.2nC @ 4.5V	6234pF @ 15V	±20V	-	1.7W (Ta)	8 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3J378R-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Stock42,024	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	840 pF @ 10 V	+6V, -8V	-	1W (Ta)	29.8mOhm @ 3A, 4.5V	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
UPA2717GR-E1-AT	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-PowerSOP Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A	4V, 10V	2.5V @ 1mA	130 nC @ 10 V	3550 pF @ 10 V	±20V	-	2W (Ta)	5.5mOhm @ 7.5A, 10V	150°C	Surface Mount	8-PowerSOP	8-PowerSOIC (0.173", 4.40mm Width)
2SK669	Sanyo	N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOTS21319C	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 2.7A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.7A (Ta)	4.5V, 10V	2.2V @ 250µA	12 nC @ 10 V	320 pF @ 15 V	±20V	-	1.2W (Ta)	100mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
2N7002KX-7	Diodes Incorporated	MOSFET N-CH 60V SOT23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CMS13N06H8-HF	Comchip Technology	MOSFET N-CH 60V 56A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	56A (Tc)	4.5V, 10V	2.6V @ 250µA	42.8 nC @ 10 V	1619 pF @ 25 V	±20V	-	2.5W (Ta), 83W (Tc)	6.4mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerVDFN
MFT6N4A0S223	Meritek	MOSFET 60V 4A 3W SOT-223 N-Ch FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4A (Ta)	-	-	3.6 nC @ 30 V	3230 pF @ 50 V	-	-	-	-	-	-	-	-
HUF76129S3S	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 56A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	56A (Tc)	4.5V, 10V	3V @ 250µA	45 nC @ 10 V	1350 pF @ 25 V	±20V	-	105W (Tc)	16mOhm @ 56A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NP88N075KUE-E2-AY	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	88A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
EPC2070	EPC	TRANS GAN DIE 100V .022OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock28,449	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	2.5V @ 1.5mA	2.5 nC @ 5 V	386 pF @ 50 V	+6V, -4V	-	-	23mOhm @ 3A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
BSC009NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 41A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	Package: -	Stock146,778	MOSFET (Metal Oxide)	25 V	41A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	126 nC @ 10 V	5800 pF @ 12 V	±20V	-	2.5W (Ta), 96W (Tc)	0.9mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN