Page 1082 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

APTM100U13SG
Microsemi Corporation

MOSFET N-CH 1000V 65A J3

Package: J3 Module

Stock3,776
FQAF34N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 21.7A TO-3PF

Package: SC-94

Stock12,720
HUF76629D3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,904
FQPF28N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 16.7A TO-220F

Package: TO-220-3 Full Pack

Stock19,704
FQB7N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 6.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,296
HUFA76409D3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,360
MTP10N10ELG
ON Semiconductor

MOSFET N-CH 100V 10A TO220AB

Package: TO-220-3

Stock390,000
STP11NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO-220

Package: TO-220-3

Stock273,840
IPI180N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 43A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,968
IRF7201PBF
Infineon Technologies

MOSFET N-CH 30V 7.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock531,876
NTTFS4930NTAG
ON Semiconductor

MOSFET N-CH 30V 23A 8WDFN

Package: 8-PowerWDFN

Stock66,432
SIR680DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 80V 100A SO8

Package: PowerPAK? SO-8

Stock4,224
STL60P4LLF6
STMicroelectronics

MOSFET P-CH 40V 60A 8POWERFLAT

Package: 8-PowerSMD, Flat Leads

Stock3,040
SPP16N50C3XKSA1
Infineon Technologies

MOSFET N-CH 560V 16A TO-220AB

Package: TO-220-3 Full Pack

Stock6,816
PMN30UNX
Nexperia USA Inc.

MOSFET N-CH 20V SC-74

Package: SC-74, SOT-457

Stock7,120
FQU2N90TU_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 900V 1.7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock14,574
IRLR8726TRPBF
Infineon Technologies

MOSFET N-CH 30V 86A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock29,388
MTD2N40ET4
onsemi

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
SI1002R-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 610MA SC75A

Package: -

Request a Quote
FS14KM-10A-B00
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APTM100U13SG	Microsemi Corporation	MOSFET N-CH 1000V 65A J3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 65A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	Package: J3 Module	Stock3,776	MOSFET (Metal Oxide)	1000V	65A	10V	4V @ 10mA	2000nC @ 10V	31600pF @ 25V	±30V	-	1250W (Tc)	145 mOhm @ 32.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	J3 Module
FQAF34N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 21.7A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 10.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock12,720	MOSFET (Metal Oxide)	250V	21.7A (Tc)	10V	5V @ 250µA	80nC @ 10V	2750pF @ 25V	±30V	-	100W (Tc)	85 mOhm @ 10.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
HUF76629D3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,904	MOSFET (Metal Oxide)	100V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1285pF @ 25V	±16V	-	110W (Tc)	52 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
FQPF28N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 16.7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 8.35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,704	MOSFET (Metal Oxide)	150V	16.7A (Tc)	10V	4V @ 250µA	52nC @ 10V	1600pF @ 25V	±25V	-	60W (Tc)	90 mOhm @ 8.35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB7N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 6.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,296	MOSFET (Metal Oxide)	200V	6.5A (Tc)	5V, 10V	2V @ 250µA	9nC @ 5V	500pF @ 25V	±20V	-	3.13W (Ta), 63W (Tc)	750 mOhm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76409D3S	Fairchild/ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,360	MOSFET (Metal Oxide)	60V	18A (Tc)	4.5V, 10V	3V @ 250µA	15nC @ 10V	485pF @ 25V	±16V	-	49W (Tc)	63 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
MTP10N10ELG	ON Semiconductor	MOSFET N-CH 100V 10A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	100V	10A (Tc)	5V	2V @ 250µA	15nC @ 5V	1040pF @ 25V	±15V	-	1.75W (Ta), 40W (Tc)	220 mOhm @ 5A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP11NM60N	STMicroelectronics	MOSFET N-CH 600V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock273,840	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	31nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	450 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI180N10N3GXKSA1	Infineon Technologies	MOSFET N-CH 100V 43A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,968	MOSFET (Metal Oxide)	100V	43A (Tc)	6V, 10V	3.5V @ 33µA	25nC @ 10V	1800pF @ 50V	±20V	-	71W (Tc)	18 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7201PBF	Infineon Technologies	MOSFET N-CH 30V 7.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock531,876	MOSFET (Metal Oxide)	30V	7.3A (Tc)	4.5V, 10V	1V @ 250µA	28nC @ 10V	550pF @ 25V	±20V	-	2.5W (Tc)	30 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTTFS4930NTAG	ON Semiconductor	MOSFET N-CH 30V 23A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 790mW (Ta), 20.2W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock66,432	MOSFET (Metal Oxide)	30V	4.5A (Ta), 23A (Tc)	4.5V, 10V	2.2V @ 250µA	5.5nC @ 4.5V	476pF @ 15V	±20V	-	790mW (Ta), 20.2W (Tc)	23 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SIR680DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 80V 100A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 7.5V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,224	MOSFET (Metal Oxide)	80V	100A (Tc)	7.5V, 10V	3.4V @ 250µA	81nC @ 7.5V	5150pF @ 40V	±20V	-	104W (Tc)	2.9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STL60P4LLF6	STMicroelectronics	MOSFET P-CH 40V 60A 8POWERFLAT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3525pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,040	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	1V @ 250µA (Min)	34nC @ 4.5V	3525pF @ 25V	±20V	-	100W (Tc)	14 mOhm @ 6.5A, 10V	175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
SPP16N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 16A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,816	MOSFET (Metal Oxide)	560V	16A (Tc)	10V	3.9V @ 675µA	66nC @ 10V	1600pF @ 25V	±20V	-	160W (Tc)	280 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack
PMN30UNX	Nexperia USA Inc.	MOSFET N-CH 20V SC-74 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock7,120	MOSFET (Metal Oxide)	30V	4.5A (Ta)	1.5V, 4.5V	900mV @ 250µA	12nC @ 4.5V	635pF @ 15V	±12V	-	530mW (Ta), 4.46W (Tc)	40 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
FQU2N90TU_AM002	Fairchild/ON Semiconductor	MOSFET N-CH 900V 1.7A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock14,574	MOSFET (Metal Oxide)	900V	1.7A (Tc)	10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	7.2 Ohm @ 850mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRLR8726TRPBF	Infineon Technologies	MOSFET N-CH 30V 86A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock29,388	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.35V @ 50µA	23nC @ 4.5V	2150pF @ 15V	±20V	-	75W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MTD2N40ET4	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI1002R-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 610MA SC75A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 220mW (Ta) Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	610mA (Ta)	1.5V, 4.5V	1V @ 250µA	2 nC @ 8 V	36 pF @ 15 V	±8V	-	220mW (Ta)	560mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75A	SC-75A
FS14KM-10A-B00	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3111-Z-E1-AZ	Renesas Electronics Corporation	POWER FIELD-EFFECT TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMYS3D8N04CLTWG	onsemi	MOSFET N-CH 40V 22A/87A 4LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	22A (Ta), 87A (Tc)	4.5V, 10V	2V @ 50µA	18 nC @ 10 V	1600 pF @ 25 V	20V	-	3.6W (Ta), 55W (Tc)	3.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
IXTT34N65X2HV	IXYS	MOSFET N-CH 650V 34A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXTT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5V @ 250µA	54 nC @ 10 V	3000 pF @ 25 V	±30V	-	540W (Tc)	96mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXTT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IPDQ60T022S7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF830PBF-BE3	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock9,960	MOSFET (Metal Oxide)	500 V	4.5A (Tc)	10V	4V @ 250µA	38 nC @ 10 V	610 pF @ 25 V	±20V	-	74W (Tc)	1.5Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
MCAC50N03Y-TP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2989 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2V @ 250µA	26 nC @ 4.5 V	2989 pF @ 15 V	±20V	-	38W (Tc)	5.6mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
R6011END3TL1	Rohm Semiconductor	MOSFET N-CH 600V 11A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock1,113	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	4V @ 1mA	32 nC @ 10 V	670 pF @ 25 V	±20V	-	124W (Tc)	390mOhm @ 3.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
PXN020-100QSJ	Nexperia USA Inc.	N-CHANNEL 100 V, 20 MOHM, STANDA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 31A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 37W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock14,664	MOSFET (Metal Oxide)	100 V	31A	-	-	13 nC @ 10 V	-	-	-	37W	-	-	Surface Mount	MLPAK33	8-PowerVDFN