Page 1084 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPA50R190CE
Infineon Technologies

MOSFET N-CH 500V 18.5A TO220FP

Package: TO-220-3 Full Pack

Stock6,528
AOTF11C60_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO220F

Package: TO-220-3 Full Pack

Stock3,520
NP110N055PUG-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 110A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,632
NP15P06SLG-E1-AY
Renesas Electronics America

MOSFET P-CH 60V 15A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock123,480
NTMD4884NFR2G
ON Semiconductor

MOSFET N-CH 30V 3.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock71,808
IXTH102N20T
IXYS

MOSFET N-CH 200V 102A TO-247

Package: TO-247-3

Stock2,992
AOW11S65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 11A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,608
AOD4186
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 10A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock142,008
STH160N4LF6-2
STMicroelectronics

MOSFET N-CH 40V 120A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock6,784
IPP057N06N3GXKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

Package: TO-220-3

Stock6,160
IXTP48N20T
IXYS

MOSFET N-CH 200V 48A TO-220

Package: TO-220-3

Stock7,760
IRF7739L2TRPBF
Infineon Technologies

MOSFET N-CH 40V DIRECTFET L8

Package: DirectFET? Isometric L8

Stock28,992
STT3P2UH7
STMicroelectronics

MOSFET P-CH 30V 3A SOT23-6

Package: SOT-23-6

Stock6,208
STU5N62K3
STMicroelectronics

MOSFET N-CH 620V 4.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock26,826
IPW65R080CFD
Infineon Technologies

MOSFET N-CH 700V 43.3A TO247

Package: TO-247-3

Stock190,944
AOT290L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 140A TO220

Package: TO-220-3

Stock36,600
TSM160P02CS
Taiwan Semiconductor Corporation

-20, -11, SINGLE P-CHANNEL

Package: -

Request a Quote
GSGG6504
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 4.00A, 650

Package: -

Stock450
2SJ654
onsemi

P-CHANNL SILICON MOSFET

Package: -

Request a Quote
NTMT061N60S5F
onsemi

SUPERFET5 FRFET, 61MOHM, PQFN88

Package: -

Stock8,988

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA50R190CE	Infineon Technologies	MOSFET N-CH 500V 18.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 510µA Gate Charge (Qg) (Max) @ Vgs: 47.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1137pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 6.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,528	MOSFET (Metal Oxide)	500V	18.5A (Tc)	13V	3.5V @ 510µA	47.2nC @ 10V	1137pF @ 100V	±20V	Super Junction	32W (Tc)	190 mOhm @ 6.2A, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
AOTF11C60_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 11A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,520	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	42nC @ 10V	2000pF @ 100V	±30V	-	50W (Tc)	440 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NP110N055PUG-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,632	MOSFET (Metal Oxide)	55V	110A (Tc)	10V	4V @ 250µA	380nC @ 10V	25700pF @ 25V	±20V	-	1.8W (Ta), 288W (Tc)	2.4 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP15P06SLG-E1-AY	Renesas Electronics America	MOSFET P-CH 60V 15A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 7.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock123,480	MOSFET (Metal Oxide)	60V	15A (Ta)	4.5V, 10V	2.5V @ 250µA	23nC @ 10V	1100pF @ 10V	±20V	-	1.2W (Ta), 30W (Tc)	70 mOhm @ 7.5A, 10V	175°C (TJ)	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMD4884NFR2G	ON Semiconductor	MOSFET N-CH 30V 3.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock71,808	MOSFET (Metal Oxide)	30V	3.3A (Ta)	4.5V, 10V	2.5V @ 250µA	4.2nC @ 4.5V	360pF @ 15V	±20V	Schottky Diode (Isolated)	770mW (Ta)	48 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IXTH102N20T	IXYS	MOSFET N-CH 200V 102A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,992	MOSFET (Metal Oxide)	200V	102A (Tc)	10V	4.5V @ 1mA	114nC @ 10V	6800pF @ 25V	±30V	-	750W (Tc)	23 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
AOW11S65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 11A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 399 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,608	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	4V @ 250µA	13.2nC @ 10V	646pF @ 100V	±30V	-	198W (Tc)	399 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AOD4186	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 10A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock142,008	MOSFET (Metal Oxide)	40V	10A (Ta), 35A (Tc)	4.5V, 10V	2.7V @ 250µA	20nC @ 10V	1200pF @ 20V	±20V	-	2.5W (Ta), 50W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
STH160N4LF6-2	STMicroelectronics	MOSFET N-CH 40V 120A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock6,784	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	1V @ 250µA (Min)	181nC @ 10V	8130pF @ 20V	±20V	-	150W (Tc)	2.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab) Variant
IPP057N06N3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,160	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 58µA	82nC @ 10V	6600pF @ 30V	±20V	-	115W (Tc)	5.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IXTP48N20T	IXYS	MOSFET N-CH 200V 48A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,760	MOSFET (Metal Oxide)	200V	48A (Tc)	10V	4.5V @ 250µA	60nC @ 10V	3000pF @ 25V	±30V	-	250W (Tc)	50 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF7739L2TRPBF	Infineon Technologies	MOSFET N-CH 40V DIRECTFET L8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock28,992	MOSFET (Metal Oxide)	40V	46A (Ta), 375A (Tc)	10V	4V @ 250µA	330nC @ 10V	11880pF @ 25V	±20V	-	3.8W (Ta), 125W (Tc)	1 mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
STT3P2UH7	STMicroelectronics	MOSFET P-CH 30V 3A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock6,208	MOSFET (Metal Oxide)	30V	3A (Tc)	1.8V, 4.5V	1V @ 250µA	4.8nC @ 4.5V	510pF @ 10V	±8V	-	1.6W (Tc)	100 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
STU5N62K3	STMicroelectronics	MOSFET N-CH 620V 4.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock26,826	MOSFET (Metal Oxide)	620V	4.2A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	680pF @ 50V	±30V	-	70W (Tc)	1.6 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IPW65R080CFD	Infineon Technologies	MOSFET N-CH 700V 43.3A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.76mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5030pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock190,944	MOSFET (Metal Oxide)	700V	43.3A (Tc)	10V	4.5V @ 1.76mA	170nC @ 10V	5030pF @ 100V	±20V	-	391W (Tc)	80 mOhm @ 17.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
AOT290L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 140A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock36,600	MOSFET (Metal Oxide)	100V	18A (Ta), 140A (Tc)	10V	4.1V @ 250µA	126nC @ 10V	9550pF @ 50V	±20V	-	2.1W (Ta), 500W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
TSM160P02CS	Taiwan Semiconductor Corporation	-20, -11, SINGLE P-CHANNEL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	11A (Tc)	1.8V, 4.5V	1V @ 250µA	27 nC @ 4.5 V	2320 pF @ 15 V	±10V	-	2.5W (Tc)	16mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
GSGG6504	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 4.00A, 650 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 304 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Stock450	MOSFET (Metal Oxide)	650 V	4A (Tc)	10V	4V @ 250µA	12 nC @ 10 V	304 pF @ 50 V	±30V	-	41W (Tc)	1.1Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
2SJ654	onsemi	P-CHANNL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMT061N60S5F	onsemi	SUPERFET5 FRFET, 61MOHM, PQFN88 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 4.6mA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-TDFN (8x8) Package / Case: 4-PowerTSFN	Package: -	Stock8,988	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	4.8V @ 4.6mA	76 nC @ 10 V	4175 pF @ 400 V	±30V	-	255W (Tc)	61mOhm @ 20.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	4-TDFN (8x8)	4-PowerTSFN
SUK3015	Sanken Electric USA Inc.	MOSFET WITH ZENER DIODE 300V/15A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220S Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock84	MOSFET (Metal Oxide)	300 V	15A (Ta)	10V	2.5V @ 1mA	-	1800 pF @ 10 V	±25V	-	89W (Tc)	150mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	TO-220S	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
APT30M30JLL	Microchip Technology	MOSFET N-CH 300V 88A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7030 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	88A (Tc)	-	5V @ 2.5mA	140 nC @ 10 V	7030 pF @ 25 V	-	-	-	30mOhm @ 44A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
FDC637ANNB5E023A	onsemi	MOSFET N-CH 20V 6.2A SSOT-6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCM1567-TP	Micro Commercial Co	MOSFET P-CH 20V 9A DFN2020-6J FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6J Package / Case: 6-WDFN Exposed Pad	Package: -	Stock93,801	MOSFET (Metal Oxide)	20 V	9A (Ta)	2.5V, 4.5V	1V @ 250µA	34 nC @ 4.5 V	2760 pF @ 15 V	±12V	-	2W (Ta)	18mOhm @ 6.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020-6J	6-WDFN Exposed Pad
IPU95R750P7AKMA1	Infineon Technologies	MOSFET N-CH 950V 9A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 73W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	950 V	9A (Tc)	10V	3.5V @ 220µA	23 nC @ 10 V	712 pF @ 400 V	±20V	-	73W (Tc)	750mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPP60R190C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 20.2A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock13,500	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	3.5V @ 630µA	63 nC @ 10 V	1400 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
AOD2144	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	40A (Ta), 120A (Tc)	4.5V, 10V	2.4V @ 250µA	95 nC @ 10 V	5225 pF @ 20 V	±20V	-	6.2W (Ta), 156W (Tc)	2.3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHF540S-GE3	Vishay Siliconix	MOSFET N-CH 100V 28A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	28A (Tc)	10V	4V @ 250µA	72 nC @ 10 V	1700 pF @ 25 V	±20V	-	3.7W (Ta), 150W (Tc)	77mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB