Page 1083 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF9335PBF
Infineon Technologies

MOSFET P-CH 30V 5.4A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,408
IRFU3710Z-701P
Infineon Technologies

MOSFET N-CH 100V 42A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock132,000
IRFU9120N
Infineon Technologies

MOSFET P-CH 100V 6.6A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock55,776
BSB104N08NP3GXUSA1
Infineon Technologies

MOSFET N-CH 80V 13A 2WDSON

Package: 3-WDSON

Stock6,400
NTMFD4951NFT3G
ON Semiconductor

MOSFET N-CH 30V 10.8A SO8FL

Package: 8-PowerTDFN

Stock3,520
IXTA3N50P
IXYS

MOSFET N-CH 500V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,904
STB10NK60Z-1
STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock37,404
SSM6J511NU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 14A UDFN6B

Package: 6-WDFN Exposed Pad

Stock3,056
TSM250N02CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-236-3, SC-59, SOT-23-3

Stock3,440
IXFB90N85X
IXYS

850V/90A ULT JUNC X-C HIPERFET P

Package: TO-264-3, TO-264AA

Stock3,696
AOT14N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 14A TO-220

Package: TO-220-3

Stock5,072
IPB60R165CP
Infineon Technologies

MOSFET N-CH 600V 21A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock402,000
STL80N75F6
STMicroelectronics

MOSFET N-CH 75V 18A POWERFLAT56

Package: 8-PowerSMD, Flat Leads

Stock288,600
RTM002P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.2A VMT3

Package: SOT-723

Stock885,816
IXFH60N50P3
IXYS

MOSFET N-CH 500V 60A TO247

Package: TO-247-3

Stock103,464
FDD6637
Fairchild/ON Semiconductor

MOSFET P-CH 35V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock902,196
BSS138LT1G
ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,160,040
G2304
Goford Semiconductor

MOSFET N-CH 30V 3.6A SOT-23

Package: -

Stock26,610
H5N2521FN-E-T2
Renesas Electronics Corporation

POWER FIELD-EFFECT TRANSISTOR

Package: -

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SI3499DV-T1-BE3
Vishay Siliconix

P-CHANNEL 1.5-V (G-S) MOSFET

Package: -

Stock2,610

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9335PBF	Infineon Technologies	MOSFET P-CH 30V 5.4A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,408	MOSFET (Metal Oxide)	30V	5.4A (Ta)	4.5V, 10V	2.4V @ 10µA	14nC @ 10V	386pF @ 25V	±20V	-	2.5W (Ta)	59 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU3710Z-701P	Infineon Technologies	MOSFET N-CH 100V 42A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock132,000	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	100nC @ 10V	2930pF @ 25V	±20V	-	140W (Tc)	18 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFU9120N	Infineon Technologies	MOSFET P-CH 100V 6.6A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock55,776	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	40W (Tc)	480 mOhm @ 3.9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
BSB104N08NP3GXUSA1	Infineon Technologies	MOSFET N-CH 80V 13A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 10A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	Package: 3-WDSON	Stock6,400	MOSFET (Metal Oxide)	80V	13A (Ta), 50A (Tc)	10V	3.5V @ 40µA	31nC @ 10V	2100pF @ 40V	±20V	-	2.8W (Ta), 42W (Tc)	10.4 mOhm @ 10A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M?	3-WDSON
NTMFD4951NFT3G	ON Semiconductor	MOSFET N-CH 30V 10.8A SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,520	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	8-PowerTDFN
IXTA3N50P	IXYS	MOSFET N-CH 500V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,904	MOSFET (Metal Oxide)	500V	3.6A (Tc)	10V	5.5V @ 50µA	9.3nC @ 10V	409pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB10NK60Z-1	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock37,404	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	70nC @ 10V	1370pF @ 25V	±30V	-	115W (Tc)	750 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
SSM6J511NU,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 14A UDFN6B FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock3,056	MOSFET (Metal Oxide)	12V	14A (Ta)	-	1V @ 1mA	47nC @ 4.5V	3350pF @ 6V	-	-	-	9.1 mOhm @ 4A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
TSM250N02CX RFG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,440	MOSFET (Metal Oxide)	20V	5.8A (Tc)	1.8V, 4.5V	800mV @ 250µA	7.7nC @ 4.5V	535pF @ 10V	±10V	-	1.56W (Tc)	25 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IXFB90N85X	IXYS	850V/90A ULT JUNC X-C HIPERFET P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1785W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,696	MOSFET (Metal Oxide)	850V	90A (Tc)	10V	5.5V @ 8mA	340nC @ 10V	13300pF @ 25V	±30V	-	1785W (Tc)	41 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
AOT14N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,072	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 250µA	51nC @ 10V	2297pF @ 25V	±30V	-	278W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IPB60R165CP	Infineon Technologies	MOSFET N-CH 600V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock402,000	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	3.5V @ 790µA	52nC @ 10V	2000pF @ 100V	±20V	-	192W (Tc)	165 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STL80N75F6	STMicroelectronics	MOSFET N-CH 75V 18A POWERFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock288,600	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	100nC @ 10V	7120pF @ 25V	±20V	-	80W (Tc)	6.3 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
RTM002P02T2L	Rohm Semiconductor	MOSFET P-CH 20V 0.2A VMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VMT3 Package / Case: SOT-723	Package: SOT-723	Stock885,816	MOSFET (Metal Oxide)	20V	200mA (Ta)	2.5V, 4.5V	2V @ 1mA	-	50pF @ 10V	±12V	-	150mW (Ta)	1.5 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	VMT3	SOT-723
IXFH60N50P3	IXYS	MOSFET N-CH 500V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	500V	60A (Tc)	10V	5V @ 4mA	96nC @ 10V	6250pF @ 25V	±30V	-	1040W (Tc)	100 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
FDD6637	Fairchild/ON Semiconductor	MOSFET P-CH 35V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock902,196	MOSFET (Metal Oxide)	35V	13A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	63nC @ 10V	2370pF @ 20V	±25V	-	3.1W (Ta), 57W (Tc)	11.6 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS138LT1G	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,160,040	MOSFET (Metal Oxide)	50V	200mA (Ta)	5V	1.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
G2304	Goford Semiconductor	MOSFET N-CH 30V 3.6A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock26,610	MOSFET (Metal Oxide)	30 V	3.6A (Tc)	4.5V, 10V	2.2V @ 250µA	4 nC @ 10 V	230 pF @ 15 V	±20V	-	1.7W (Tc)	58mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
H5N2521FN-E-T2	Renesas Electronics Corporation	POWER FIELD-EFFECT TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	3A (Ta)	10V	4.5V @ 1mA	5.3 nC @ 10 V	160 pF @ 25 V	±30V	-	20W (Ta)	2.2Ohm @ 1.5A, 10V	150°C	Through Hole	TO-220FN	TO-220-3 Full Pack
SI3499DV-T1-BE3	Vishay Siliconix	P-CHANNEL 1.5-V (G-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 750mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock2,610	MOSFET (Metal Oxide)	8 V	5.3A (Ta)	1.5V, 4.5V	750mV @ 250µA	42 nC @ 4.5 V	-	±5V	-	1.1W (Ta)	23mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
UF3SC065030B7S	Qorvo	650V/30MOHM, SIC, STACKED FAST C FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock8,028	SiCFET (Cascode SiCJFET)	650 V	62A (Tc)	12V	6V @ 10mA	43 nC @ 12 V	1500 pF @ 100 V	±25V	-	214W (Tc)	35mOhm @ 40A, 12V	175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTBG030N120M3S	onsemi	SILICON CARBIDE (SIC) MOSFET - E FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,394	SiC (Silicon Carbide Junction Transistor)	1200 V	77A (Tc)	18V	4.4V @ 15mA	107 nC @ 18 V	2430 pF @ 800 V	+22V, -10V	-	348W (Tc)	39mOhm @ 30A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT3022ALHRC11	Rohm Semiconductor	SICFET N-CH 650V 93A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 339W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock6,738	SiCFET (Silicon Carbide)	650 V	93A (Tc)	18V	5.6V @ 18.2mA	133 nC @ 18 V	2208 pF @ 500 V	+22V, -4V	-	339W	28.6mOhm @ 36A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SIHB24N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,752	MOSFET (Metal Oxide)	800 V	21A (Tc)	-	4V @ 250µA	89 nC @ 10 V	1836 pF @ 100 V	±30V	-	208W (Tc)	184mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
CMUDM8001-TR-PBFREE	Central Semiconductor Corp	MOSFET P-CH 20V 100MA SOT523 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 3 V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock33,888	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.5V, 4V	1.1V @ 250µA	0.66 nC @ 4.5 V	45 pF @ 3 V	10V	-	250mW (Ta)	8Ohm @ 10mA, 4V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
TSM070NB04CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 15A/75A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2403 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5.2x5.75) Package / Case: 8-PowerLDFN	Package: -	Stock21,960	MOSFET (Metal Oxide)	40 V	15A (Ta), 75A (Tc)	10V	4V @ 250µA	40 nC @ 10 V	2403 pF @ 20 V	±20V	-	3.1W (Ta), 83W (Tc)	7mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFN (5.2x5.75)	8-PowerLDFN
PJL9404_R2_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 343 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6A (Ta)	4.5V, 10V	2.1V @ 250µA	7.8 nC @ 10 V	343 pF @ 15 V	±20V	-	1.7W (Ta)	28mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
AP2P053N-HF-ML	MOSLEADER	Single P -20V -4.2A SOT-23S FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-