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Infineon Technologies |
MOSFET N-CH 55V 100A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,536 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 230µA | 480nC @ 10V | 21620pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 16A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? ST
- Package / Case: DirectFET? Isometric ST
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Package: DirectFET? Isometric ST |
Stock4,320 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 72A (Tc) | 4.5V, 10V | 2.35V @ 250µA | 29nC @ 4.5V | 2380pF @ 15V | ±20V | - | 2.2W (Ta), 42W (Tc) | 5.4 mOhm @ 16A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? ST | DirectFET? Isometric ST |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 3.5A 4WLCSP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1685pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 550mW (Ta)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-AlphaDFN (1.57x1.57)
- Package / Case: 4-SMD, No Lead
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Package: 4-SMD, No Lead |
Stock6,192 |
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MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 1685pF @ 10V | ±8V | - | 550mW (Ta) | 33 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-AlphaDFN (1.57x1.57) | 4-SMD, No Lead |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,096 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 3300pF @ 25V | ±20V | - | 1.8W (Ta), 120W (Tc) | 8 mOhm @ 40A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET P-CH 100V 10.5A TO-220F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,128 |
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MOSFET (Metal Oxide) | 100V | 10.5A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 41W (Tc) | 190 mOhm @ 5.25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 83A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,072 |
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MOSFET (Metal Oxide) | 150V | 83A (Tc) | 8V, 10V | 4V @ 160µA | 55nC @ 10V | 3230pF @ 75V | ±20V | - | 214W (Tc) | 11.1 mOhm @ 83A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 26.6W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Thin-PAK (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,496 |
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MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | ±20V | - | 26.6W (Tc) | 1.5 Ohm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,256,108 |
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MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | ±30V | Super Junction | 60W (Tc) | 600 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 30V 8.7A PWRDI3333-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock6,928 |
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MOSFET (Metal Oxide) | 30V | 8.7A (Ta) | 5V, 10V | 2.5V @ 250µA | 16.5nC @ 10V | 1931pF @ 15V | ±25V | - | 950mW (Ta) | 20 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 1500V 2A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P-3L
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock7,152 |
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MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | - | 37.5nC @ 10V | 380pF @ 30V | ±20V | - | 2.5W (Ta), 110W (Tc) | 13 Ohm @ 1A, 10V | 150°C (TJ) | Through Hole | TO-3P-3L | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET PCH 40V 20A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,528 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 24nC @ 4.5V | 2615pF @ 25V | ±20V | - | 60W (Tc) | 15 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 17A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Rds On (Max) @ Id, Vgs: 27.4 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,792 |
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MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 3.4nC @ 4.5V | 400pF @ 25V | ±16V | - | 18W (Tc) | 27.4 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microsemi Corporation |
MOSFET N-CH 1200V 143A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 143A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.3V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock4,048 |
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MOSFET (Metal Oxide) | 1200V | 143A | 20V | 2.3V @ 2mA | 360nC @ 20V | 5960pF @ 1000V | +25V, -10V | - | 600W (Tc) | 17 mOhm @ 100A, 20V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Fairchild/ON Semiconductor |
MOSFET N-CH 75V 80A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8665pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock131,052 |
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MOSFET (Metal Oxide) | 75V | 22A (Ta), 80A (Tc) | 6V, 10V | 4V @ 250µA | 160nC @ 10V | 8665pF @ 25V | ±20V | - | 450W (Tc) | 3.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 61.8A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 106W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock27,822 |
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MOSFET (Metal Oxide) | 55V | 61.8A (Tc) | 5V, 10V | 2.15V @ 1mA | 32nC @ 5V | 2880pF @ 25V | ±15V | - | 106W (Tc) | 11 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Microchip Technology |
MOSFET P-CH 60V 0.25A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock52,380 |
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MOSFET (Metal Oxide) | 60V | 250mA (Tj) | 5V, 10V | 3.5V @ 1mA | - | 60pF @ 25V | ±20V | - | 1W (Tc) | 12 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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STMicroelectronics |
MOSFET N-CH 650V 32A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,712 |
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MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 4V @ 250µA | 56.5nC @ 10V | 2355pF @ 100V | ±25V | - | 250W (Tc) | 99 mOhm @ 16A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 30A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.27mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock81 |
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MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 230W (Tc) | 90mOhm @ 15A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V SO-8 T&R
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
PCH -60V -3.5A POWER MOSFET - RQ
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 22 nC @ 10 V | 1190 pF @ 30 V | ±20V | - | 950mW (Ta) | 78mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 45V 29.7A/108A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
- Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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Package: - |
Stock36,000 |
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MOSFET (Metal Oxide) | 45 V | 29.7A (Ta), 108A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 70 nC @ 10 V | 4000 pF @ 20 V | +20V, -16V | - | 5W (Ta), 65.7W (Tc) | 2.83mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 30 V (D-S)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 13.6W (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
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Package: - |
Stock15,954 |
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MOSFET (Metal Oxide) | 30 V | 2.25A (Tc) | 2.5V, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | 440 pF @ 20 V | ±12V | - | 13.6W (Tc) | 65mOhm @ 3A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 15A/47A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: - |
Stock49,377 |
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MOSFET (Metal Oxide) | 100 V | 15A (Ta), 47A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 35 nC @ 10 V | 1725 pF @ 50 V | ±20V | - | 5W (Ta), 48W (Tc) | 10.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Harris Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8.33W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 4A (Tc) | 10V | 4V @ 1mA | - | 850 pF @ 25 V | ±20V | - | 8.33W (Tc) | 400mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
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Infineon Technologies |
OPTIMOS LOWVOLTAGE POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-WHSON-8-1
- Package / Case: 8-PowerWDFN
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Package: - |
Stock17,727 |
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MOSFET (Metal Oxide) | 25 V | 47A (Ta), 310A (Tc) | 4.5V, 10V | 2V @ 250µA | 82 nC @ 10 V | 5453 pF @ 12 V | ±16V | - | 2.1W (Ta), 89W (Tc) | 0.58mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-WHSON-8-1 | 8-PowerWDFN |
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onsemi |
MOSFET N-CH 100V 50A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Stock1,869 |
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MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 10V | 4V @ 250µA | 21 nC @ 10 V | 1440 pF @ 50 V | ±20V | - | 91W (Tc) | 15mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Micro Commercial Co |
MOSFET N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW
- Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020-6J
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 15A | 2.5V, 8V | 1.1V @ 250µA | 23 nC @ 10 V | 1300 pF @ 15 V | ±8V | - | 700mW | 8mOhm @ 5A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020-6J | 6-WDFN Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 18A (Ta), 71A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 13.9 nC @ 10 V | 978 pF @ 20 V | ±20V | - | 3.5W (Ta), 51W (Tc) | 5.5mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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