Page 1088 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFL024Z
Infineon Technologies

MOSFET N-CH 55V 5.1A SOT223

Package: TO-261-4, TO-261AA

Stock639,876
MCH6331-TL-H
ON Semiconductor

MOSFET P-CH 30V 3.5A MCPH6

Package: 6-SMD, Flat Leads

Stock15,456
SI1303DL-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 670MA SOT323-3

Package: SC-70, SOT-323

Stock2,439,240
IRFZ30PBF
Vishay Siliconix

MOSFET N-CH 50V 30A TO-220AB

Package: TO-220-3

Stock85,104
IRFR420TRR
Vishay Siliconix

MOSFET N-CH 500V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,824
IRFU320
Vishay Siliconix

MOSFET N-CH 400V 3.1A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock9,876
STB21NM50N
STMicroelectronics

MOSFET N-CH 500V 18A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,600
NVMFS5C410NWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock4,592
STL19N60M2
STMicroelectronics

MOSFET NCH 600V 11A POWERFLAT

Package: 8-PowerVDFN

Stock6,032
BUK764R0-55B,118
Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,544
IXFX80N50Q3
IXYS

MOSFET N-CH 500V 80A PLUS247

Package: TO-247-3

Stock6,592
IPAW60R360P7SXKSA1
Infineon Technologies

MOSFET N-CH 650V 9A TO220

Package: TO-220-3 Full Pack

Stock18,288
BSC011N03LSI
Infineon Technologies

MOSFET N-CH 30V 37A TDSON-8

Package: 8-PowerTDFN

Stock41,520
FDP039N08B_F102
Fairchild/ON Semiconductor

MOSFET N CH 80V 120A TO-220

Package: TO-220-3

Stock5,392
FCU2250N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2.6A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock14,952
SI4346DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 5.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock548,520
SI2343DS-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 3.1A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,075,188
UPA2592T1H-T1-AT
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
06N06L
Goford Semiconductor

MOSFET N-CH 60V 5.5A SOT-23-3L

Package: -

Request a Quote
IPD90P04P405ATMA2
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

Package: -

Stock5,253

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFL024Z	Infineon Technologies	MOSFET N-CH 55V 5.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock639,876	MOSFET (Metal Oxide)	55V	5.1A (Ta)	10V	4V @ 250µA	14nC @ 10V	340pF @ 25V	±20V	-	1W (Ta)	57.5 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
MCH6331-TL-H	ON Semiconductor	MOSFET P-CH 30V 3.5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock15,456	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4V, 10V	-	5nC @ 10V	250pF @ 10V	±20V	-	1.5W (Ta)	98 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	6-MCPH	6-SMD, Flat Leads
SI1303DL-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 670MA SOT323-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 670mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,439,240	MOSFET (Metal Oxide)	20V	670mA (Ta)	2.5V, 4.5V	1.4V @ 250µA	2.2nC @ 4.5V	-	±12V	-	290mW (Ta)	430 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
IRFZ30PBF	Vishay Siliconix	MOSFET N-CH 50V 30A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock85,104	MOSFET (Metal Oxide)	50V	30A (Tc)	10V	4V @ 250µA	30nC @ 10V	1600pF @ 25V	±20V	-	74W (Tc)	50 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR420TRR	Vishay Siliconix	MOSFET N-CH 500V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,824	MOSFET (Metal Oxide)	500V	2.4A (Tc)	10V	4V @ 250µA	19nC @ 10V	360pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	3 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU320	Vishay Siliconix	MOSFET N-CH 400V 3.1A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock9,876	MOSFET (Metal Oxide)	400V	3.1A (Tc)	10V	4V @ 250µA	20nC @ 10V	350pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.8 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
STB21NM50N	STMicroelectronics	MOSFET N-CH 500V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,600	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	4V @ 250µA	65nC @ 10V	1950pF @ 25V	±25V	-	140W (Tc)	190 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C410NWFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 0.92 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,592	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	86nC @ 10V	6100pF @ 25V	±20V	-	3.9W (Ta), 166W (Tc)	0.92 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STL19N60M2	STMicroelectronics	MOSFET NCH 600V 11A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,032	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	21.5nC @ 10V	791pF @ 100V	±25V	-	90W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
BUK764R0-55B,118	Nexperia USA Inc.	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6776pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,544	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	86nC @ 10V	6776pF @ 25V	±20V	-	300W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFX80N50Q3	IXYS	MOSFET N-CH 500V 80A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,592	MOSFET (Metal Oxide)	500V	80A (Tc)	10V	6.5V @ 8mA	200nC @ 10V	10000pF @ 25V	±30V	-	1250W (Tc)	65 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IPAW60R360P7SXKSA1	Infineon Technologies	MOSFET N-CH 650V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 2.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,288	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	4V @ 140µA	13nC @ 10V	555pF @ 400V	±30V	-	22W (Tc)	360 mOhm @ 2.7A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
BSC011N03LSI	Infineon Technologies	MOSFET N-CH 30V 37A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock41,520	MOSFET (Metal Oxide)	30V	37A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	68nC @ 10V	4300pF @ 15V	±20V	-	2.5W (Ta), 96W (Tc)	1.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
FDP039N08B_F102	Fairchild/ON Semiconductor	MOSFET N CH 80V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9450pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,392	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4.5V @ 250µA	133nC @ 10V	9450pF @ 40V	±20V	-	214W (Tc)	3.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCU2250N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 2.25 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock14,952	MOSFET (Metal Oxide)	800V	2.6A (Tc)	10V	4.5V @ 260µA	14nC @ 10V	585pF @ 100V	±20V	-	39W (Tc)	2.25 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SI4346DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.31W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock548,520	MOSFET (Metal Oxide)	30V	5.9A (Ta)	2.5V, 10V	2V @ 250µA	10nC @ 4.5V	-	±12V	-	1.31W (Ta)	23 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI2343DS-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 3.1A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,075,188	MOSFET (Metal Oxide)	30V	3.1A (Ta)	4.5V, 10V	3V @ 250µA	21nC @ 10V	540pF @ 15V	±20V	-	750mW (Ta)	53 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
UPA2592T1H-T1-AT	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
06N06L	Goford Semiconductor	MOSFET N-CH 60V 5.5A SOT-23-3L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5.5A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	5.5A	-	2.5V @ 250µA	-	765 pF @ 30 V	±20V	-	960mW	42mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
IPD90P04P405ATMA2	Infineon Technologies	MOSFET P-CH 40V 90A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,253	MOSFET (Metal Oxide)	40 V	90A (Tc)	10V	4V @ 250µA	154 nC @ 10 V	10300 pF @ 25 V	±20V	-	125W (Tc)	4.7mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJP5NA50_T0_00001	Panjit International Inc.	500V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 87.5W (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	5A (Ta)	10V	4V @ 250µA	11 nC @ 10 V	491 pF @ 25 V	±30V	-	87.5W (Tc)	1.55Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PJL9415_R2_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3168 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock5,430	MOSFET (Metal Oxide)	30 V	12A (Ta)	4.5V, 10V	2.5V @ 250µA	26 nC @ 4.5 V	3168 pF @ 15 V	±20V	-	1.7W (Ta)	9.5mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IRFD112	Harris Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip Package / Case: 4-DIP (0.300", 7.62mm)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	800mA (Tc)	10V	4V @ 250µA	7 nC @ 10 V	135 pF @ 25 V	±20V	-	1W (Tc)	800mOhm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip	4-DIP (0.300", 7.62mm)
MSJL20N60A-TP	Micro Commercial Co	N-CHANNEL MOSFET,DFN8080A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1336 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 196W Rds On (Max) @ Id, Vgs: 219mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN8080A Package / Case: 4-PowerVSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A	10V	4V @ 250µA	36 nC @ 10 V	1336 pF @ 25 V	±30V	-	196W	219mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN8080A	4-PowerVSFN
PJA3434_R2_00001	Panjit International Inc.	MOSFET 20V 750MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.2V, 4.5V	1V @ 250µA	1.4 nC @ 4.5 V	67 pF @ 10 V	±10V	-	500mW (Ta)	400mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STD1057T4	onsemi	NFET DPAK SPCL 60V TR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP50N05	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250nA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	50A (Tc)	10V	4V @ 250nA	160 nC @ 20 V	-	±20V	-	132W (Tc)	22mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STWA65N65DM2AG	STMicroelectronics	MOSFET N-CH 650V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	60A (Tc)	10V	5V @ 250µA	120 nC @ 10 V	5500 pF @ 100 V	±25V	-	446W (Tc)	50mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3