Page 1105 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL3715TRR
Infineon Technologies

MOSFET N-CH 20V 54A TO-220AB

Package: TO-220-3

Stock4,128
IRFZ48NSTRR
Infineon Technologies

MOSFET N-CH 55V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,304
JAN2N7224U
Microsemi Corporation

MOSFET N-CH TO-267AB

Package: TO-267AB

Stock4,720
SI3445ADV-T1-E3
Vishay Siliconix

MOSFET P-CH 8V 4.4A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,664,028
PMF290XN,115
NXP

MOSFET N-CH 20V 1A SOT323

Package: SC-70, SOT-323

Stock43,200
IXFV18N90PS
IXYS

MOSFET N-CH 900V 18A PLUS220SMD

Package: PLUS-220SMD

Stock6,672
NTD65N03R
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,888
MMSF3P02HDR2SG
ON Semiconductor

MOSFET P-CH 20V 5.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,184
NTB30N06LT4
ON Semiconductor

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,312
IXFT12N100
IXYS

MOSFET N-CH 1000V 12A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,096
IXTP50N20PM
IXYS

MOSFET N-CH 200V 20A TO-220

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,848
NTMFS4C53NT1G
ON Semiconductor

MOSFET N-CH 30V 38A SO8FL

Package: 8-PowerTDFN

Stock3,072
DMN2058U-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,152
SIHB21N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A D2PAK TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
IPD60R1K4C6
Infineon Technologies

MOSFET N-CH 600V 3.2A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock310,824
PSMN2R5-30YL,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock5,376
IRFS4229TRLPBF
Infineon Technologies

MOSFET N-CH 250V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock377,208
STD2NK90ZT4
STMicroelectronics

MOSFET N-CH 900V 2.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock240,192
XP4062CMT
YAGEO XSEMI

MOSFET N-CH 30V 26A 58A PMPAK

Package: -

Stock3,000
SPW15N60C3FKSA1
Infineon Technologies

MOSFET N-CH 650V 15A TO247-3

Package: -

Stock696

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3715TRR	Infineon Technologies	MOSFET N-CH 20V 54A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,128	MOSFET (Metal Oxide)	20V	54A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 4.5V	1060pF @ 10V	±20V	-	3.8W (Ta), 71W (Tc)	14 mOhm @ 26A, 10V	-	Through Hole	TO-220AB	TO-220-3
IRFZ48NSTRR	Infineon Technologies	MOSFET N-CH 55V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,304	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 250µA	81nC @ 10V	1970pF @ 25V	±20V	-	3.8W (Ta), 130W (Tc)	14 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JAN2N7224U	Microsemi Corporation	MOSFET N-CH TO-267AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock4,720	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	81 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
SI3445ADV-T1-E3	Vishay Siliconix	MOSFET P-CH 8V 4.4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,664,028	MOSFET (Metal Oxide)	8V	4.4A (Ta)	1.8V, 4.5V	1V @ 250µA	19nC @ 4.5V	-	±8V	-	1.1W (Ta)	42 mOhm @ 5.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
PMF290XN,115	NXP	MOSFET N-CH 20V 1A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 560mW (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock43,200	MOSFET (Metal Oxide)	20V	1A (Tc)	2.5V, 4.5V	1.5V @ 250µA	0.72nC @ 4.5V	34pF @ 20V	±12V	-	560mW (Tc)	350 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
IXFV18N90PS	IXYS	MOSFET N-CH 900V 18A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock6,672	MOSFET (Metal Oxide)	900V	18A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5230pF @ 25V	±30V	-	540W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
NTD65N03R	ON Semiconductor	MOSFET N-CH 25V 9.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,888	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
MMSF3P02HDR2SG	ON Semiconductor	MOSFET P-CH 20V 5.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,184	MOSFET (Metal Oxide)	20V	5.6A (Ta)	4.5V, 10V	2V @ 250µA	46nC @ 10V	1400pF @ 16V	±20V	-	2.5W (Ta)	75 mOhm @ 3A, 10V	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTB30N06LT4	ON Semiconductor	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 15A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,312	MOSFET (Metal Oxide)	60V	30A (Ta)	5V	2V @ 250µA	32nC @ 5V	1150pF @ 25V	±15V	-	88.2W (Tc)	46 mOhm @ 15A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFT12N100	IXYS	MOSFET N-CH 1000V 12A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,096	MOSFET (Metal Oxide)	1000V	12A (Tc)	10V	4.5V @ 4mA	155nC @ 10V	4000pF @ 25V	±20V	-	300W (Tc)	1.05 Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTP50N20PM	IXYS	MOSFET N-CH 200V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,848	MOSFET (Metal Oxide)	200V	20A (Tc)	10V	5V @ 250µA	70nC @ 10V	2720pF @ 25V	±20V	-	90W (Tc)	60 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
NTMFS4C53NT1G	ON Semiconductor	MOSFET N-CH 30V 38A SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,072	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DMN2058U-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.13W Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,152	MOSFET (Metal Oxide)	20V	4.6A (Ta)	1.8V, 10V	1.2V @ 250µA	7.7nC @ 10V	281pF @ 10V	±12V	-	1.13W	35 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SIHB21N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A D2PAK TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB (D2PAK) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	4V @ 250µA	84nC @ 10V	2030pF @ 100V	±30V	-	227W (Tc)	176 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60R1K4C6	Infineon Technologies	MOSFET N-CH 600V 3.2A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock310,824	MOSFET (Metal Oxide)	600V	3.2A (Tc)	10V	3.5V @ 90µA	9.4nC @ 10V	200pF @ 100V	±20V	-	28.4W (Tc)	1.4 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN2R5-30YL,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3468pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,376	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.15V @ 1mA	57nC @ 10V	3468pF @ 12V	±20V	-	88W (Tc)	2.4 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IRFS4229TRLPBF	Infineon Technologies	MOSFET N-CH 250V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 26A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock377,208	MOSFET (Metal Oxide)	250V	45A (Tc)	10V	5V @ 250µA	110nC @ 10V	4560pF @ 25V	±30V	-	330W (Tc)	48 mOhm @ 26A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD2NK90ZT4	STMicroelectronics	MOSFET N-CH 900V 2.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock240,192	MOSFET (Metal Oxide)	900V	2.1A (Tc)	10V	4.5V @ 50µA	27nC @ 10V	485pF @ 25V	±30V	-	70W (Tc)	6.5 Ohm @ 1.05A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
XP4062CMT	YAGEO XSEMI	MOSFET N-CH 30V 26A 58A PMPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1488 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PMPAK® 5 x 6 Package / Case: 8-PowerLDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	30 V	26A (Ta), 58A (Tc)	4.5V, 10V	3V @ 250µA	30.4 nC @ 10 V	1488 pF @ 25 V	±20V	-	5W (Ta), 25W (Tc)	4.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PMPAK® 5 x 6	8-PowerLDFN
SPW15N60C3FKSA1	Infineon Technologies	MOSFET N-CH 650V 15A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Stock696	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	3.9V @ 675µA	63 nC @ 10 V	1660 pF @ 25 V	±20V	-	156W (Tc)	280mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IRFZ48STRLPBF	Vishay Siliconix	MOSFET N-CHANNEL 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,959	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	4V @ 250µA	110 nC @ 10 V	2400 pF @ 25 V	±20V	-	3.7W (Ta), 190W (Tc)	18mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G3R75MT12D	GeneSiC Semiconductor	SIC MOSFET N-CH 41A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.69V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 207W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock7,947	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	2.69V @ 7.5mA	54 nC @ 15 V	1560 pF @ 800 V	+22V, -10V	-	207W (Tc)	90mOhm @ 20A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SK3377-0-Z-E1-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 20A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	20A (Tj)	-	-	-	-	-	-	-	-	-	-	-	-
UPA1808GR-9JG-E1-A	Renesas	UPA1808 - N CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-Power TSSOP Package / Case: 8-PowerTSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9.5A (Ta)	4V, 10V	2.5V @ 1mA	13 nC @ 10 V	660 pF @ 10 V	±20V	-	2W (Ta)	17mOhm @ 5A, 10V	150°C	Surface Mount	8-Power TSSOP	8-PowerTSSOP (0.173", 4.40mm Width)
AOD5N50M	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	4.5V @ 250µA	14 nC @ 10 V	670 pF @ 25 V	±30V	-	104W (Tc)	1.6Ohm @ 2.5A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCU95N06KY-TP	Micro Commercial Co	N-CHANNEL MOSFET,DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 95A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72.84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4159 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,895	MOSFET (Metal Oxide)	60 V	95A	4.5V, 10V	2.5V @ 250µA	72.84 nC @ 10 V	4159 pF @ 30 V	±20V	-	160W	5.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BUK7D36-60EX	Nexperia USA Inc.	MOSFET N-CH 60V 5.5A/14A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock27,768	MOSFET (Metal Oxide)	60 V	5.5A (Ta), 14A (Tc)	10V	4V @ 250µA	14 nC @ 10 V	453 pF @ 30 V	±20V	-	2.3W (Ta), 15W (Tc)	36mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
BUK4D50-30PX	Nexperia USA Inc.	BUK4D50-30P/SOT1220/SOT1220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	28 V	5A (Ta), 13A (Tc)	1.8V, 4.5V	1V @ 250µA	21 nC @ 4.5 V	1254 pF @ 15 V	±12V	-	2.1W (Ta), 15W (Tc)	50mOhm @ 4A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad