Page 1113 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFR6215
Infineon Technologies

MOSFET P-CH 150V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,048
IRF7601PBF
Infineon Technologies

MOSFET N-CH 20V 5.7A MICRO-8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock7,520
IPSH6N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock4,224
IRF7807VD1TR
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock32,700
BUK961R4-30E,118
NXP

MOSFET N-CH 30V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
FQD7P06TM_F080
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,480
IRFU120
Vishay Siliconix

MOSFET N-CH 100V 7.7A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,992
BUK9506-40B,127
Nexperia USA Inc.

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock7,568
IPI65R380C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 10.6A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,832
MKE38P600LB
IXYS

MOSFET N-CH 600V 50A SMPD

Package: 9-SMD Module

Stock5,600
APT44F80B2
Microsemi Corporation

MOSFET N-CH 800V 47A T-MAX

Package: TO-247-3 Variant

Stock4,576
SI4636DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,616
DMP2042UCB4-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V U-WLB1010-4

Package: 4-UFBGA, WLBGA

Stock4,496
BSS138BKVL
Nexperia USA Inc.

BSS138BK/SOT23/TO-236AB

Package: -

Stock7,760
TK16E60W5,S1VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15.8A TO-220AB

Package: TO-220-3

Stock6,312
IRFR9020TRPBF
Vishay Siliconix

MOSFET P-CH 50V 9.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock67,860
IPP093N06N3GXKSA1
Infineon Technologies

MOSFET N-CH 60V 50A TO220-3

Package: TO-220-3

Stock16,776
STB19NM65N
STMicroelectronics

MOSFET N-CH 650V 15.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,232
FDMS86152
Fairchild/ON Semiconductor

MOSFET N-CH 100V 14A POWER56

Package: 8-PowerTDFN

Stock3,200
SI3483CDV-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock192,300

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR6215	Infineon Technologies	MOSFET P-CH 150V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,048	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	110W (Tc)	295 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7601PBF	Infineon Technologies	MOSFET N-CH 20V 5.7A MICRO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock7,520	MOSFET (Metal Oxide)	20V	5.7A (Ta)	2.7V, 4.5V	700mV @ 250µA	22nC @ 4.5V	650pF @ 15V	±12V	-	1.8W (Ta)	35 mOhm @ 3.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IPSH6N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,224	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 30µA	19nC @ 5V	2390pF @ 15V	±20V	-	71W (Tc)	6.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IRF7807VD1TR	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock32,700	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	3V @ 250µA	14nC @ 4.5V	-	±20V	Schottky Diode (Isolated)	2.5W (Ta)	25 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK961R4-30E,118	NXP	MOSFET N-CH 30V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	30V	120A (Tc)	5V, 10V	2.1V @ 1mA	113nC @ 5V	16150pF @ 25V	±10V	-	357W (Tc)	1.4 mOhm @ 25A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD7P06TM_F080	Fairchild/ON Semiconductor	MOSFET P-CH 60V 5.4A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,480	MOSFET (Metal Oxide)	60V	5.4A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	295pF @ 25V	±25V	-	2.5W (Ta), 28W (Tc)	451 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU120	Vishay Siliconix	MOSFET N-CH 100V 7.7A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,992	MOSFET (Metal Oxide)	100V	7.7A (Tc)	10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	270 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
BUK9506-40B,127	Nexperia USA Inc.	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4901pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 203W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,568	MOSFET (Metal Oxide)	40V	75A (Tc)	4.5V, 10V	2V @ 1mA	44nC @ 5V	4901pF @ 25V	±15V	-	203W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI65R380C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 10.6A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,832	MOSFET (Metal Oxide)	650V	10.6A (Tc)	10V	3.5V @ 320µA	39nC @ 10V	710pF @ 100V	±20V	-	83W (Tc)	380 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
MKE38P600LB	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD?.B Package / Case: 9-SMD Module	Package: 9-SMD Module	Stock5,600	MOSFET (Metal Oxide)	600V	50A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	ISOPLUS-SMPD?.B	9-SMD Module
APT44F80B2	Microsemi Corporation	MOSFET N-CH 800V 47A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock4,576	MOSFET (Metal Oxide)	800V	47A (Tc)	10V	5V @ 2.5mA	305nC @ 10V	9330pF @ 25V	±30V	-	1135W (Tc)	210 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
SI4636DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2635pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.4W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,616	MOSFET (Metal Oxide)	30V	17A (Tc)	4.5V, 10V	2.5V @ 250µA	60nC @ 10V	2635pF @ 15V	±16V	-	2.5W (Ta), 4.4W (Tc)	8.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMP2042UCB4-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V U-WLB1010-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 218pF @ 10V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 45 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-WLB1010-4 Package / Case: 4-UFBGA, WLBGA	Package: 4-UFBGA, WLBGA	Stock4,496	MOSFET (Metal Oxide)	60V	4.6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	2.5nC @ 4.5V	218pF @ 10V	-6V	-	1.4W	45 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-WLB1010-4	4-UFBGA, WLBGA
BSS138BKVL	Nexperia USA Inc.	BSS138BK/SOT23/TO-236AB FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,760	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK16E60W5,S1VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15.8A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 7.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,312	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	4.5V @ 790µA	43nC @ 10V	1350pF @ 300V	±30V	-	130W (Tc)	230 mOhm @ 7.9A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFR9020TRPBF	Vishay Siliconix	MOSFET P-CH 50V 9.9A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock67,860	MOSFET (Metal Oxide)	50V	9.9A (Tc)	10V	4V @ 250µA	14nC @ 10V	490pF @ 25V	±20V	-	42W (Tc)	280 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP093N06N3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 50A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock16,776	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 34µA	36nC @ 10V	2900pF @ 30V	±20V	-	71W (Tc)	9.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
STB19NM65N	STMicroelectronics	MOSFET N-CH 650V 15.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,232	MOSFET (Metal Oxide)	650V	15.5A (Tc)	10V	4V @ 250µA	55nC @ 10V	1900pF @ 50V	±25V	-	150W (Tc)	270 mOhm @ 7.75A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS86152	Fairchild/ON Semiconductor	MOSFET N-CH 100V 14A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,200	MOSFET (Metal Oxide)	100V	14A (Ta), 45A (Tc)	6V, 10V	4V @ 250µA	50nC @ 10V	3370pF @ 50V	±20V	-	2.7W (Ta), 125W (Tc)	6 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
SI3483CDV-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 8A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock192,300	MOSFET (Metal Oxide)	30V	8A (Tc)	10V	3V @ 250µA	33nC @ 10V	1000pF @ 15V	±20V	-	2W (Ta), 4.2W (Tc)	34 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TA)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
BSP324L6327	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4-21 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	170mA (Ta)	4.5V, 10V	2.3V @ 94µA	5.9 nC @ 10 V	154 pF @ 25 V	±20V	-	1.8W (Ta)	25Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4-21	TO-261-4, TO-261AA
2SK2167-TD-E	onsemi	NCH 10V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCH3406-TL-E	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RM3415	Rectron USA	MOSFET P-CHANNEL 20V 4A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4A (Ta)	2.5V, 4.5V	900mV @ 250µA	-	950 pF @ 10 V	±10V	-	1.4W (Ta)	45mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
APT20M11JFLL	Microchip Technology	MOSFET N-CH 200V 176A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 176A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10320 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	176A (Tc)	-	5V @ 5mA	180 nC @ 10 V	10320 pF @ 25 V	-	-	-	11mOhm @ 88A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
IQE018N06NM6CGATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CSD13202Q2T	Texas Instruments	PROTOTYPE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WSON (2x2) Package / Case: 6-WDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	14.4A (Ta)	2.5V, 4.5V	1.1V @ 250µA	6.6 nC @ 4.5 V	997 pF @ 6 V	±8V	-	2.7W (Ta)	9.3mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad
APT6038BLLG	Microchip Technology	MOSFET N-CH 600V 17A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	17A (Tc)	-	5V @ 1mA	43 nC @ 10 V	1850 pF @ 25 V	-	-	-	380mOhm @ 8.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3