Page 1116 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLU8721-701PBF
Infineon Technologies

MOSFET N-CH 30V 65A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,000
SPP80N06S2L-05
Infineon Technologies

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock6,960
IXFX52N30Q
IXYS

MOSFET N-CH PLUS247

Package: TO-247-3

Stock2,752
AOTF10N60L_002
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO220F

Package: TO-220-3 Full Pack

Stock5,632
NTP2955
ON Semiconductor

MOSFET P-CH 60V 2.4A TO220AB

Package: TO-220-3

Stock6,336
FQD1N50TF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,688
IRL3713STRRPBF
Infineon Technologies

MOSFET N-CH 30V 260A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,868
IPD60R650CEBTMA1
Infineon Technologies

MOSFET N-CH 600V 7A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,384
IXFR12N100Q
IXYS

MOSFET N-CH 1000V 10A ISOPLUS247

Package: ISOPLUS247?

Stock14,148
TP2435N8-G
Microchip Technology

MOSFET P-CH 350V 0.231A SOT89-3

Package: TO-243AA

Stock7,168
NTTFS4H07NTAG
ON Semiconductor

MOSFET N-CH 25V 18.5A U8FL

Package: 8-PowerWDFN

Stock4,160
DMP2010UFG-13
Diodes Incorporated

MOSFET P-CH 20V 12.7A PWRDI3333

Package: 8-PowerWDFN

Stock2,544
DMT2004UFDF-13
Diodes Incorporated

MOSFET NCH 24V 14.1A UDFN2020

Package: 6-UDFN Exposed Pad

Stock7,184
CSD19505KCS
Texas Instruments

MOSFET N-CH 80V 150A TO-220

Package: TO-220-3

Stock4,784
FDMS86105
Fairchild/ON Semiconductor

MOSFET N-CH 100V POWER56

Package: 8-PowerTDFN

Stock45,684
IPA60R385CPXKSA1
Infineon Technologies

MOSFET N-CH 600V 9A TO220-3

Package: TO-220-3 Full Pack

Stock18,648
IXFH22N50P
IXYS

MOSFET N-CH 500V 22A TO-247

Package: TO-247-3

Stock390,000
IRLR7833
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,435,608
DMP2018LFK-7
Diodes Incorporated

MOSFET P-CH 20V 9.2A 6-DFN

Package: 6-PowerUDFN

Stock8,796
NVMFS5C468NWFT1G
onsemi

MOSFET N-CH 40V 12A/35A 5DFN

Package: -

Stock4,500

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLU8721-701PBF	Infineon Technologies	MOSFET N-CH 30V 65A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,000	MOSFET (Metal Oxide)	30V	65A (Tc)	4.5V, 10V	2.35V @ 25µA	13nC @ 4.5V	1030pF @ 15V	±20V	-	65W (Tc)	8.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SPP80N06S2L-05	Infineon Technologies	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,960	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 10V	7530pF @ 25V	±20V	-	300W (Tc)	4.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IXFX52N30Q	IXYS	MOSFET N-CH PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,752	MOSFET (Metal Oxide)	300V	52A (Tc)	-	-	-	-	-	-	360W (Tc)	-	150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
AOTF10N60L_002	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,632	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	50W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
NTP2955	ON Semiconductor	MOSFET P-CH 60V 2.4A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,336	MOSFET (Metal Oxide)	60V	2.4A (Ta)	10V	4V @ 250µA	14nC @ 10V	700pF @ 25V	±20V	-	2.4W (Ta), 62.5W (Tc)	196 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQD1N50TF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 550mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,688	MOSFET (Metal Oxide)	500V	1.1A (Tc)	10V	5V @ 250µA	5.5nC @ 10V	150pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	9 Ohm @ 550mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3713STRRPBF	Infineon Technologies	MOSFET N-CH 30V 260A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,868	MOSFET (Metal Oxide)	30V	260A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 4.5V	5890pF @ 15V	±20V	-	330W (Tc)	3 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60R650CEBTMA1	Infineon Technologies	MOSFET N-CH 600V 7A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,384	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	3.5V @ 200µA	20.5nC @ 10V	440pF @ 100V	±20V	-	82W (Tc)	650 mOhm @ 2.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFR12N100Q	IXYS	MOSFET N-CH 1000V 10A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock14,148	MOSFET (Metal Oxide)	1000V	10A (Tc)	10V	5.5V @ 4mA	90nC @ 10V	2900pF @ 25V	±20V	-	250W (Tc)	1.1 Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
TP2435N8-G	Microchip Technology	MOSFET P-CH 350V 0.231A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 231mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock7,168	MOSFET (Metal Oxide)	350V	231mA (Tj)	3V, 10V	2.4V @ 1mA	-	200pF @ 25V	±20V	-	1.6W (Ta)	15 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
NTTFS4H07NTAG	ON Semiconductor	MOSFET N-CH 25V 18.5A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 771pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.64W (Ta), 33.8W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,160	MOSFET (Metal Oxide)	25V	18.5A (Ta), 66A (Tc)	4.5V, 10V	2.1V @ 250µA	12.4nC @ 10V	771pF @ 12V	±20V	-	2.64W (Ta), 33.8W (Tc)	4.8 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
DMP2010UFG-13	Diodes Incorporated	MOSFET P-CH 20V 12.7A PWRDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,544	MOSFET (Metal Oxide)	20V	12.7A (Ta), 42A (Tc)	2.5V, 4.5V	1.2V @ 250µA	103nC @ 10V	3350pF @ 10V	±10V	-	900mW (Ta)	9.5 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
DMT2004UFDF-13	Diodes Incorporated	MOSFET NCH 24V 14.1A UDFN2020 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock7,184	MOSFET (Metal Oxide)	24V	14.1A (Ta)	2.5V, 10V	1.45V @ 250µA	53.7nC @ 10V	1683pF @ 15V	±12V	-	800mW (Ta), 12.5W (Tc)	6 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
CSD19505KCS	Texas Instruments	MOSFET N-CH 80V 150A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 6V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,784	MOSFET (Metal Oxide)	80V	150A (Ta)	6V, 10V	3.2V @ 250µA	76nC @ 10V	7820pF @ 40V	±20V	-	300W (Tc)	3.8 mOhm @ 100A, 6V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMS86105	Fairchild/ON Semiconductor	MOSFET N-CH 100V POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock45,684	MOSFET (Metal Oxide)	100V	6A (Ta), 26A (Tc)	6V, 10V	4V @ 250µA	11nC @ 10V	645pF @ 50V	±20V	-	2.5W (Ta), 48W (Tc)	34 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
IPA60R385CPXKSA1	Infineon Technologies	MOSFET N-CH 600V 9A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock18,648	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	3.5V @ 340µA	22nC @ 10V	790pF @ 100V	±20V	-	31W (Tc)	385 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IXFH22N50P	IXYS	MOSFET N-CH 500V 22A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	5.5V @ 2.5mA	50nC @ 10V	2630pF @ 25V	±30V	-	350W (Tc)	270 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IRLR7833	Infineon Technologies	MOSFET N-CH 30V 140A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,435,608	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	2.3V @ 250µA	50nC @ 4.5V	4010pF @ 15V	±20V	-	140W (Tc)	4.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMP2018LFK-7	Diodes Incorporated	MOSFET P-CH 20V 9.2A 6-DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4748pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2523-6 Package / Case: 6-PowerUDFN	Package: 6-PowerUDFN	Stock8,796	MOSFET (Metal Oxide)	20V	9.2A (Ta)	1.5V, 4.5V	1.2V @ 200µA	113nC @ 10V	4748pF @ 10V	±12V	-	1W (Ta)	16 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2523-6	6-PowerUDFN
NVMFS5C468NWFT1G	onsemi	MOSFET N-CH 40V 12A/35A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	40 V	12A (Ta), 35A (Tc)	10V	3.5V @ 250µA	7.9 nC @ 10 V	420 pF @ 25 V	±20V	-	3.5W (Ta), 28W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
RJK03M8DNS-00-J5	Renesas Electronics Corporation	MOSFET N-CH 30V 30A 8HWSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HWSON (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Ta)	-	-	14.5 nC @ 4.5 V	2590 pF @ 10 V	-	-	20W (Tc)	5.2mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-HWSON (3.3x3.3)	8-PowerWDFN
AOK66613	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 58.5A/120A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15.6W (Ta), 312W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock1,326	MOSFET (Metal Oxide)	60 V	58.5A (Ta), 120A (Tc)	8V, 10V	3.5V @ 250µA	110 nC @ 10 V	5300 pF @ 30 V	±20V	-	15.6W (Ta), 312W (Tc)	2.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
2SJ166-1-T1B-A	Renesas Electronics Corporation	P-CHANNEL, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK4098LS	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC60R600P7X7SA1	Infineon Technologies	MOSFET N-CH DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH43M7LFGQ-13-A	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	5V, 10V	2.5V @ 250µA	30 nC @ 10 V	2182 pF @ 20 V	±20V	-	3.5W (Ta), 65.2W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
MCH3377-S-TL-E	onsemi	MOSFET P-CH 20V 3A MCPH3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDR836P	Fairchild Semiconductor	P-CHANNEL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-8 Package / Case: 8-LSOP (0.130", 3.30mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.1A (Ta)	2.5V, 4.5V	1V @ 250µA	44 nC @ 4.5 V	2200 pF @ 25 V	±8V	-	900mW (Ta)	30mOhm @ 6.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-8	8-LSOP (0.130", 3.30mm Width)