Page 1115 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6613TR1PBF
Infineon Technologies

MOSFET N-CH 40V 23A DIRECTFET

Package: DirectFET? Isometric MT

Stock93,204
IRL3715STRR
Infineon Technologies

MOSFET N-CH 20V 54A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock42,000
SIR406DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock729,000
SIE816DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 60A POLARPAK

Package: 10-PolarPAK? (L)

Stock4,912
SI1046R-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 0.606A SC75-3

Package: SC-75A

Stock5,904
AOD496
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 62A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,012
NTMFS4744NT3G
ON Semiconductor

MOSFET N-CH 30V 7A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,408
IRFS450B
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9.6A TO-3PF

Package: SC-94

Stock9,156
DMP1045U-7
Diodes Incorporated

MOSFET P-CH 12V 4A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,288
SIHG44N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 46A TO247AC

Package: TO-247-3

Stock7,376
TSM10N80CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,448
BUK662R5-30C,118
Nexperia USA Inc.

MOSFET N-CH 30V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock25,992
FDD306P
Fairchild/ON Semiconductor

MOSFET P-CH 12V 6.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock93,600
DMN2041L-7
Diodes Incorporated

MOSFET N-CH 20V 6.4A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock552,000
DI170N03PQ
Diotec Semiconductor

IC

Package: -

Request a Quote
RJK0379DPA-WS-J53
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
SQJA72EP-T1_BE3
Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

Package: -

Request a Quote
DMN6017SK3-13
Diodes Incorporated

MOSFET N-CHANNEL 60V 43A TO252

Package: -

Stock17,433
2SK2406-TL-E
onsemi

NCH 10V DRIVE SERIES

Package: -

Request a Quote
DI114N06PQ
Diotec Semiconductor

IC

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6613TR1PBF	Infineon Technologies	MOSFET N-CH 40V 23A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock93,204	MOSFET (Metal Oxide)	40V	23A (Ta), 150A (Tc)	4.5V, 10V	2.25V @ 250µA	63nC @ 4.5V	5950pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	3.4 mOhm @ 23A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRL3715STRR	Infineon Technologies	MOSFET N-CH 20V 54A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock42,000	MOSFET (Metal Oxide)	20V	54A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 4.5V	1060pF @ 10V	±20V	-	3.8W (Ta), 71W (Tc)	14 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIR406DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2083pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock729,000	MOSFET (Metal Oxide)	25V	40A (Tc)	4.5V, 10V	2.4V @ 250µA	50nC @ 10V	2083pF @ 10V	±20V	-	5W (Ta), 48W (Tc)	3.8 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIE816DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 60A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (L) Package / Case: 10-PolarPAK? (L)	Package: 10-PolarPAK? (L)	Stock4,912	MOSFET (Metal Oxide)	60V	60A (Tc)	10V	4.4V @ 250µA	77nC @ 10V	3100pF @ 30V	±20V	-	5.2W (Ta), 125W (Tc)	7.4 mOhm @ 19.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (L)	10-PolarPAK? (L)
SI1046R-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 0.606A SC75-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	Package: SC-75A	Stock5,904	MOSFET (Metal Oxide)	20V	-	1.8V, 4.5V	950mV @ 250µA	1.49nC @ 5V	66pF @ 10V	±8V	-	250mW (Ta)	420 mOhm @ 606mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75A	SC-75A
AOD496	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 62A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,012	MOSFET (Metal Oxide)	30V	62A (Tc)	4.5V, 10V	2.5V @ 250µA	23nC @ 10V	1200pF @ 15V	±20V	-	2.5W (Ta), 62.5W (Tc)	9.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4744NT3G	ON Semiconductor	MOSFET N-CH 30V 7A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 880mW (Ta), 47.2W (Tc) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,408	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 11.5V	2.5V @ 250µA	17nC @ 4.5V	1300pF @ 12V	±20V	-	880mW (Ta), 47.2W (Tc)	7.6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRFS450B	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9.6A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock9,156	MOSFET (Metal Oxide)	500V	9.6A (Tc)	10V	4V @ 250µA	113nC @ 10V	3800pF @ 25V	±30V	-	96W (Tc)	390 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
DMP1045U-7	Diodes Incorporated	MOSFET P-CH 12V 4A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1357pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,288	MOSFET (Metal Oxide)	12V	4A (Ta)	1.8V, 4.5V	1V @ 250µA	15.8nC @ 4.5V	1357pF @ 10V	±8V	-	800mW (Ta)	31 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIHG44N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 46A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 278nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5892pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock7,376	MOSFET (Metal Oxide)	650V	46A (Tc)	10V	4V @ 250µA	278nC @ 10V	5892pF @ 100V	±30V	-	417W (Tc)	73 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
TSM10N80CI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,448	MOSFET (Metal Oxide)	800V	9.5A (Tc)	10V	4V @ 250µA	53nC @ 10V	2336pF @ 25V	±30V	-	48W (Tc)	1.05 Ohm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
BUK662R5-30C,118	Nexperia USA Inc.	MOSFET N-CH 30V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock25,992	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	2.8V @ 1mA	114nC @ 10V	6960pF @ 25V	±16V	-	204W (Tc)	2.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD306P	Fairchild/ON Semiconductor	MOSFET P-CH 12V 6.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 52W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.7A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock93,600	MOSFET (Metal Oxide)	12V	6.7A (Ta)	1.8V, 4.5V	1.5V @ 250µA	21nC @ 4.5V	1290pF @ 6V	±8V	-	52W (Ta)	28 mOhm @ 6.7A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN2041L-7	Diodes Incorporated	MOSFET N-CH 20V 6.4A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 780mW (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock552,000	MOSFET (Metal Oxide)	20V	6.4A (Ta)	2.5V, 4.5V	1.2V @ 250µA	15.6nC @ 10V	550pF @ 10V	±12V	-	780mW (Ta)	28 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DI170N03PQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	170A (Tc)	4.5V, 10V	2V @ 250µA	90 nC @ 10 V	5300 pF @ 15 V	±20V	-	135W (Tc)	1.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
RJK0379DPA-WS-J53	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQJA72EP-T1_BE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	37A (Tc)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	1390 pF @ 25 V	±20V	-	55W (Tc)	19mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
DMN6017SK3-13	Diodes Incorporated	MOSFET N-CHANNEL 60V 43A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock17,433	MOSFET (Metal Oxide)	60 V	43A (Tc)	4.5V, 10V	3V @ 250µA	55 nC @ 10 V	2711 pF @ 15 V	±20V	-	50W (Tc)	18mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK2406-TL-E	onsemi	NCH 10V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DI114N06PQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63.8W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	114A (Tc)	10V	3.5V @ 250µA	78.5 nC @ 10 V	4130 pF @ 30 V	±20V	-	63.8W (Tc)	3mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
XP2318GEN	YAGEO XSEMI	MOSFET N-CH 30V 500MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock2,940	MOSFET (Metal Oxide)	30 V	500mA (Ta)	2.5V, 4V	1.3V @ 250µA	1.8 nC @ 4.5 V	48 pF @ 25 V	±16V	-	700mW (Ta)	1.5Ohm @ 500mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDFMA2P029Z-F106	onsemi	MOSFET P-CH 20V 3.1A 6MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.1A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10 nC @ 4.5 V	720 pF @ 10 V	±12V	Schottky Diode (Isolated)	1.4W (Ta)	95mOhm @ 3.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
IPDQ65R080CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 223W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	4.5V @ 630µA	50 nC @ 10 V	2513 pF @ 400 V	±20V	-	223W (Tc)	80mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
SIHA150N60E-GE3	Vishay Siliconix	E SERIES POWER MOSFET THIN-LEAD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock6,000	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	5V @ 250µA	36 nC @ 10 V	1514 pF @ 100 V	±30V	-	179W (Tc)	155mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
AOTF600A60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 8A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27.5W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	8A (Tj)	10V	3.5V @ 250µA	11.5 nC @ 10 V	608 pF @ 100 V	±20V	-	27.5W (Tc)	600mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SI4190DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	20A (Tc)	-	2.8V @ 250µA	58 nC @ 10 V	2000 pF @ 50 V	-	-	-	8.8mOhm @ 15A, 10V	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NVMYS1D2N04CLTWG	onsemi	MOSFET N-CH 40V 44A/258A LFPAK4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	44A (Ta), 258A (Tc)	4.5V, 10V	2V @ 180µA	109 nC @ 10 V	6330 pF @ 20 V	±20V	-	3.9W (Ta), 134W (Tc)	1.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
TSM250N02CX	Taiwan Semiconductor Corporation	20V, 5.8A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 0.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5.8A (Tc)	1.8V, 4.5V	0.8V @ 250µA	7.7 nC @ 4.5 V	535 pF @ 10 V	±10V	-	1.56W (Tc)	25mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3