Page 1114 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6893MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 29A MX

Package: DirectFET? Isometric MX

Stock3,536
IRF6638TRPBF
Infineon Technologies

MOSFET N-CH 30V 25A DIRECTFET

Package: DirectFET? Isometric MX

Stock16,068
AON7548_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

Package: 8-VDFN Exposed Pad

Stock3,872
AO4450L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,304
IRFP460C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 20A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,584
NTP85N03
ON Semiconductor

MOSFET N-CH 28V 85A TO220AB

Package: TO-220-3

Stock3,056
IPI65R280C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 13.8A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,008
IXTA44P15T
IXYS

MOSFET P-CH 150V 44A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,960
IXFA4N100P
IXYS

MOSFET N-CH 1000V 4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,104
HAT2173H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

Package: SC-100, SOT-669

Stock243,456
FQP6N70
Fairchild/ON Semiconductor

MOSFET N-CH 700V 6.2A TO-220

Package: TO-220-3

Stock12,480
VN2222LL-G-P013
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7,952
IPA60R330P6XKSA1
Infineon Technologies

MOSFET N-CH 600V 12A TO220FP-3

Package: TO-220-3 Full Pack

Stock10,464
PMN30XPX
Nexperia USA Inc.

MOSFET P-CH 20V SC-74

Package: SC-74, SOT-457

Stock4,400
RSQ015N06TR
Rohm Semiconductor

MOSFET N-CH 60V 1.5A TSMT6

Package: SOT-23-6 Thin, TSOT-23-6

Stock506,928
BUK9616-75B,118
Nexperia USA Inc.

MOSFET N-CH 75V 67A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock26,664
STP24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A TO-220

Package: TO-220-3

Stock120,216
FCB20N60FTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,794
STB37N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 28A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock24,468
NTE2371
NTE Electronics, Inc

MOSFET P-CHANNEL 100V 19A TO220

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6893MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 29A MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 168A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 13V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 29A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock3,536	MOSFET (Metal Oxide)	25V	29A (Ta), 168A (Tc)	4.5V, 10V	2.1V @ 100µA	38nC @ 4.5V	3480pF @ 13V	±16V	-	2.1W (Ta), 69W (Tc)	1.6 mOhm @ 29A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6638TRPBF	Infineon Technologies	MOSFET N-CH 30V 25A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock16,068	MOSFET (Metal Oxide)	30V	25A (Ta), 140A (Tc)	4.5V, 10V	2.35V @ 100µA	45nC @ 4.5V	3770pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.9 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
AON7548_101	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1086pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock3,872	MOSFET (Metal Oxide)	30V	14A (Ta), 24A (Tc)	4.5V, 10V	2.5V @ 250µA	22nC @ 10V	1086pF @ 15V	±20V	-	3.1W (Ta), 23W (Tc)	8.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-VDFN Exposed Pad
AO4450L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,304	MOSFET (Metal Oxide)	40V	7A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	516pF @ 20V	±20V	-	3.1W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFP460C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 20A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 235W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,584	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	4V @ 250µA	170nC @ 10V	6000pF @ 25V	±30V	-	235W (Tc)	240 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
NTP85N03	ON Semiconductor	MOSFET N-CH 28V 85A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,056	MOSFET (Metal Oxide)	28V	85A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2150pF @ 24V	±20V	-	80W (Tc)	6.8 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI65R280C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 13.8A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,008	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IXTA44P15T	IXYS	MOSFET P-CH 150V 44A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,960	MOSFET (Metal Oxide)	150V	44A (Tc)	10V	4V @ 250µA	175nC @ 10V	13400pF @ 25V	±15V	-	298W (Tc)	65 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA4N100P	IXYS	MOSFET N-CH 1000V 4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,104	MOSFET (Metal Oxide)	1000V	4A (Tc)	10V	5V @ 250µA	26nC @ 10V	1456pF @ 25V	±20V	-	150W (Tc)	3.3 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HAT2173H-EL-E	Renesas Electronics America	MOSFET N-CH 100V 25A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 6V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock243,456	MOSFET (Metal Oxide)	100V	25A (Ta)	8V, 10V	6V @ 20mA	61nC @ 10V	4350pF @ 10V	±20V	-	30W (Tc)	15 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
FQP6N70	Fairchild/ON Semiconductor	MOSFET N-CH 700V 6.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock12,480	MOSFET (Metal Oxide)	700V	6.2A (Tc)	10V	5V @ 250µA	40nC @ 10V	1400pF @ 25V	±30V	-	142W (Tc)	1.5 Ohm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
VN2222LL-G-P013	Microchip Technology	MOSFET N-CH 60V 0.23A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400mW (Ta), 1W (Tc) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7,952	MOSFET (Metal Oxide)	60V	230mA (Tj)	5V, 10V	2.5V @ 1mA	-	60pF @ 25V	±30V	-	400mW (Ta), 1W (Tc)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
IPA60R330P6XKSA1	Infineon Technologies	MOSFET N-CH 600V 12A TO220FP-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock10,464	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4.5V @ 370µA	22nC @ 10V	1010pF @ 100V	±20V	-	32W (Tc)	330 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
PMN30XPX	Nexperia USA Inc.	MOSFET P-CH 20V SC-74 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 550mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock4,400	MOSFET (Metal Oxide)	20V	5.2A (Ta)	1.5V, 4.5V	900mV @ 250µA	23nC @ 4.5V	1575pF @ 10V	±12V	-	550mW (Ta), 6.25W (Tc)	34 mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
RSQ015N06TR	Rohm Semiconductor	MOSFET N-CH 60V 1.5A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 290 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock506,928	MOSFET (Metal Oxide)	60V	1.5A (Ta)	4V, 10V	2.5V @ 1mA	3.5nC @ 10V	110pF @ 10V	±20V	-	600mW (Ta)	290 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
BUK9616-75B,118	Nexperia USA Inc.	MOSFET N-CH 75V 67A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4034pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock26,664	MOSFET (Metal Oxide)	75V	67A (Tc)	5V, 10V	2V @ 1mA	35nC @ 5V	4034pF @ 25V	±15V	-	157W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock120,216	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	150W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FCB20N60FTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,794	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB37N60DM2AG	STMicroelectronics	MOSFET N-CH 600V 28A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock24,468	MOSFET (Metal Oxide)	600V	28A (Tc)	10V	5V @ 250µA	54nC @ 10V	2400pF @ 100V	±25V	-	210W (Tc)	110 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTE2371	NTE Electronics, Inc	MOSFET P-CHANNEL 100V 19A TO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	19A (Tc)	10V	4V @ 250µA	61 nC @ 10 V	1400 pF @ 25 V	±20V	-	150W (Tc)	200mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SI7434ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 250V 3.7A/12.3A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 12.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 54.3W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	3.7A (Ta), 12.3A (Tc)	7.5V, 10V	4V @ 250µA	16.5 nC @ 10 V	600 pF @ 125 V	±20V	-	5W (Ta), 54.3W (Tc)	150mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPD079N06L3GBTMA1	Infineon Technologies	MOSFET N-CH 60V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	2.2V @ 34µA	29 nC @ 4.5 V	4900 pF @ 30 V	±20V	-	79W (Tc)	7.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK03D0DNS-00-J5	Renesas Electronics Corporation	POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP120P04P4L03AKSA2	Infineon Technologies	MOSFET P-CH 40V 120A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Stock1,830	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	2.2V @ 340µA	234 nC @ 10 V	15000 pF @ 25 V	+5V, -16V	-	136W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IQE046N08LM5SCATMA1	Infineon Technologies	OPTIMOS 5 POWER-TRANSISTOR 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 47µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHSON-8 Package / Case: 8-PowerWDFN	Package: -	Stock18,000	MOSFET (Metal Oxide)	80 V	15.6A (Ta), 99A (Tc)	4.5V, 10V	2.3V @ 47µA	38 nC @ 10 V	3250 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	4.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHSON-8	8-PowerWDFN
FSS132-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCH3412-EBM-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPL60R095CFD7AUMA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	Package: -	Stock8,340	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4.5V @ 570µA	51 nC @ 10 V	2103 pF @ 400 V	±20V	-	147W (Tc)	95mOhm @ 1.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN