Page 1117 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP42N03S2L13
Infineon Technologies

MOSFET N-CH 30V 42A TO-220AB

Package: TO-220-3

Stock6,384
IRFR4105ZTR
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,952
SI4682DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock565,980
SI7703EDN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.3A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock113,232
IRFBE30L
Vishay Siliconix

MOSFET N-CH 800V 4.1A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,000
IRF820STRL
Vishay Siliconix

MOSFET N-CH 500V 2.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,352
STW220NF75
STMicroelectronics

MOSFET N-CH 75V 120A TO-247

Package: TO-247-3

Stock94,896
BSC0906NSATMA1
Infineon Technologies

MOSFET N-CH 30V 18A 8TDSON

Package: 8-PowerTDFN

Stock6,048
TK6A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 6.2A TO-220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,736
AOW15S65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 15A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,832
NVMFS5C670NLWFT3G
ON Semiconductor

MOSFET N-CH 60V 71A SO8FL

Package: 8-PowerTDFN

Stock3,696
MCH3474-TL-W
ON Semiconductor

MOSFET N-CH 30V 4A MCPH3

Package: 3-SMD, Flat Leads

Stock5,536
IPD80R280P7ATMA1
Infineon Technologies

MOSFET N-CH 800V 17A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,312
BUK9M24-60EX
Nexperia USA Inc.

MOSFET N-CH 60V 32A LFPAK

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock3,280
RQ3E075ATTB
Rohm Semiconductor

PCH -30V -18A MIDDLE POWER MOSFE

Package: 8-PowerVDFN

Stock4,624
DMN1260UFA-7B
Diodes Incorporated

MOSFET N-CH 12V 0.5A X2DFN-3

Package: 3-XFDFN

Stock6,080
IRLL2705PBF
Infineon Technologies

MOSFET N-CH 55V 3.8A SOT223

Package: TO-261-4, TO-261AA

Stock87,996
FQT3P20TF
Fairchild/ON Semiconductor

MOSFET P-CH 200V 0.67A SOT-223

Package: TO-261-4, TO-261AA

Stock42,000
SIJA54ADP-T1-GE3
Vishay Siliconix

N-CHANNEL 40 V (D-S) MOSFET POWE

Package: -

Stock17,844
PH4030DLAX
Nexperia USA Inc.

MOSFET N-CH 30V LFPAK

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP42N03S2L13	Infineon Technologies	MOSFET N-CH 30V 42A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 37µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,384	MOSFET (Metal Oxide)	30V	42A (Tc)	4.5V, 10V	2V @ 37µA	30.5nC @ 10V	1130pF @ 25V	±20V	-	83W (Tc)	12.9 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFR4105ZTR	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,952	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 250µA	27nC @ 10V	740pF @ 25V	±20V	-	48W (Tc)	24.5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4682DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 16A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock565,980	MOSFET (Metal Oxide)	30V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	38nC @ 10V	1595pF @ 15V	±20V	-	2.5W (Ta), 4.45W (Tc)	9.4 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7703EDN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4.3A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock113,232	MOSFET (Metal Oxide)	20V	4.3A (Ta)	1.8V, 4.5V	1V @ 800µA	18nC @ 4.5V	-	±12V	Schottky Diode (Isolated)	1.3W (Ta)	48 mOhm @ 6.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IRFBE30L	Vishay Siliconix	MOSFET N-CH 800V 4.1A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,000	MOSFET (Metal Oxide)	800V	4.1A (Tc)	10V	4V @ 250µA	78nC @ 10V	1300pF @ 25V	±20V	-	125W (Tc)	3 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF820STRL	Vishay Siliconix	MOSFET N-CH 500V 2.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,352	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW220NF75	STMicroelectronics	MOSFET N-CH 75V 120A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock94,896	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 250µA	430nC @ 10V	12500pF @ 25V	±20V	-	500W (Tc)	4.4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
BSC0906NSATMA1	Infineon Technologies	MOSFET N-CH 30V 18A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,048	MOSFET (Metal Oxide)	30V	18A (Ta), 63A (Tc)	4.5V, 10V	2V @ 250µA	13nC @ 10V	870pF @ 15V	±20V	-	2.5W (Ta), 30W (Tc)	4.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
TK6A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 6.2A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,736	MOSFET (Metal Oxide)	600V	6.2A (Ta)	10V	3.7V @ 310µA	12nC @ 10V	390pF @ 300V	±30V	Super Junction	30W (Tc)	750 mOhm @ 3.1A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
AOW15S65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 15A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,832	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	4V @ 250µA	17.2nC @ 10V	841pF @ 100V	±30V	-	208W (Tc)	290 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NVMFS5C670NLWFT3G	ON Semiconductor	MOSFET N-CH 60V 71A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,696	MOSFET (Metal Oxide)	60V	17A (Ta), 71A (Tc)	4.5V, 10V	2V @ 250µA	20nC @ 10V	1400pF @ 25V	±20V	-	3.6W (Ta), 61W (Tc)	6.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
MCH3474-TL-W	ON Semiconductor	MOSFET N-CH 30V 4A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock5,536	MOSFET (Metal Oxide)	30V	4A (Ta)	1.8V, 4.5V	1.3V @ 1mA	4.7nC @ 4.5V	430pF @ 10V	±12V	-	1W (Ta)	50 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
IPD80R280P7ATMA1	Infineon Technologies	MOSFET N-CH 800V 17A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,312	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	3.5V @ 360µA	36nC @ 10V	1200pF @ 500V	±20V	Super Junction	101W (Tc)	280 mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9M24-60EX	Nexperia USA Inc.	MOSFET N-CH 60V 32A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1469pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock3,280	MOSFET (Metal Oxide)	60V	32A (Tc)	5V	2.1V @ 1mA	12.4nC @ 5V	1469pF @ 25V	±10V	-	55W (Tc)	21 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
RQ3E075ATTB	Rohm Semiconductor	PCH -30V -18A MIDDLE POWER MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,624	MOSFET (Metal Oxide)	30V	18A (Tc)	10V	2.5V @ 1mA	10.4nC @ 4.5V	930pF @ 15V	±20V	-	15W (Tc)	23 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
DMN1260UFA-7B	Diodes Incorporated	MOSFET N-CH 12V 0.5A X2DFN-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.96nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 366 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0806-3 Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock6,080	MOSFET (Metal Oxide)	12V	500mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.96nC @ 4.5V	60pF @ 10V	±8V	-	360mW (Ta)	366 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0806-3	3-XFDFN
IRLL2705PBF	Infineon Technologies	MOSFET N-CH 55V 3.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock87,996	MOSFET (Metal Oxide)	55V	3.8A (Ta)	4V, 10V	2V @ 250µA	48nC @ 10V	870pF @ 25V	±16V	-	1W (Ta)	40 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
FQT3P20TF	Fairchild/ON Semiconductor	MOSFET P-CH 200V 0.67A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 670mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 335mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock42,000	MOSFET (Metal Oxide)	200V	670mA (Tc)	10V	5V @ 250µA	8nC @ 10V	250pF @ 25V	±30V	-	2.5W (Tc)	2.7 Ohm @ 335mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SIJA54ADP-T1-GE3	Vishay Siliconix	N-CHANNEL 40 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 35.4A (Ta), 126A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,844	MOSFET (Metal Oxide)	40 V	35.4A (Ta), 126A (Tc)	4.5V, 10V	2.5V @ 250µA	70 nC @ 10 V	3850 pF @ 20 V	+20V, -16V	-	5.2W (Ta), 65.7W (Tc)	2.3mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PH4030DLAX	Nexperia USA Inc.	MOSFET N-CH 30V LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC360SMA120SA	Microchip Technology	MOSFET SIC 1200 V 360 MOHM TO-26 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.14V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	20V	3.14V @ 250µA	21 nC @ 20 V	255 pF @ 1000 V	+23V, -10V	-	71W (Tc)	450mOhm @ 5A, 20V	-55°C ~ 175°C (TJ)	-	-	-
IPTC012N08NM5ATMA1	Infineon Technologies	MOSFET N-CH 80V 40A/396A HDSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 396A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	Package: -	Stock12,384	MOSFET (Metal Oxide)	80 V	40A (Ta), 396A (Tc)	6V, 10V	3.8V @ 275µA	219 nC @ 10 V	16000 pF @ 40 V	±20V	-	3.8W (Ta), 375W (Tc)	1.2mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
CPH6339-TL-E	Sanyo	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQJ860EP-T1_BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual	Package: -	Stock18,000	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	55 nC @ 10 V	2700 pF @ 25 V	±20V	-	48W (Tc)	6mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
IRFS830B	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	4.5A (Tj)	10V	4V @ 250µA	35 nC @ 10 V	1050 pF @ 25 V	±30V	-	38W (Tj)	1.5Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
RD3P175SNFRATL	Rohm Semiconductor	MOSFET N-CH 100V 17.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock11,211	MOSFET (Metal Oxide)	100 V	17.5A (Ta)	4V, 10V	2.5V @ 1mA	24 nC @ 10 V	950 pF @ 25 V	±20V	-	20W (Tc)	105mOhm @ 8.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHB30N60ET5-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,400	MOSFET (Metal Oxide)	600 V	29A (Tc)	10V	4V @ 250µA	130 nC @ 10 V	2600 pF @ 100 V	±30V	-	250W (Tc)	125mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTMFS4C302NT3G	onsemi	NFET SO8FL 30V 1.15MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5780 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	41A (Ta), 230A (Tc)	4.5V, 10V	2.2V @ 250µA	82 nC @ 10 V	5780 pF @ 15 V	±20V	-	3.13W (Ta), 96W (Tc)	1.15mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads