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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 13A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MP
- Package / Case: DirectFET? Isometric MP
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Package: DirectFET? Isometric MP |
Stock3,744 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta), 56A (Tc) | 4.5V, 10V | 2.4V @ 50µA | 17nC @ 4.5V | 1300pF @ 15V | ±20V | - | 2.3W (Ta), 42W (Tc) | 7.7 mOhm @ 13A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MP | DirectFET? Isometric MP |
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Infineon Technologies |
MOSFET N-CH 55V 3.7A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock332,592 |
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MOSFET (Metal Oxide) | 55V | 3.7A (Ta) | 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | ±20V | - | 1W (Ta) | 45 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 60V 120A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 17450pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,080 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V, 10V | 2.1V @ 1mA | 120nC @ 5V | 17450pF @ 25V | ±10V | - | 349W (Tc) | 2.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 650V 24A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock390,168 |
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MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 5V @ 250µA | 72nC @ 10V | 3320pF @ 100V | ±25V | - | 35W (Tc) | 119 mOhm @ 12A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Microsemi Corporation |
MOSFET N-CH 800V 33A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 33A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 303nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9326pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 543W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP?
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock2,048 |
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MOSFET (Metal Oxide) | 800V | 33A | 10V | 5V @ 2.5mA | 303nC @ 10V | 9326pF @ 25V | ±30V | - | 543W (Tc) | 190 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 20A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 370 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock46,320 |
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MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4.5V @ 250µA | 74nC @ 10V | 3680pF @ 25V | ±30V | - | 50W (Tc) | 370 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 500V 45A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock110,424 |
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MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 5V @ 250µA | 117nC @ 10V | 3700pF @ 25V | ±30V | - | 417W (Tc) | 100 mOhm @ 22.5A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (L)
- Package / Case: 10-PolarPAK? (L)
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Package: 10-PolarPAK? (L) |
Stock3,712 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 7400pF @ 15V | ±20V | - | 5.2W (Ta), 125W (Tc) | 2.4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
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Infineon Technologies |
MOSFET N-CH 100V 60A 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,568 |
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MOSFET (Metal Oxide) | 100V | 60A (Tc) | 6V, 10V | 3.8V @ 36µA | 28nC @ 10V | 2100pF @ 50V | ±20V | - | 2.5W (Ta), 69W (Tc) | 9.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 3.8A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock11,052 |
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MOSFET (Metal Oxide) | 600V | 3.8A (Tc) | 10V | 5V @ 250µA | 10.8nC @ 10V | 510pF @ 25V | ±25V | - | 28W (Tc) | 2.5 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock7,408 |
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MOSFET (Metal Oxide) | 60V | 5.3A (Tc) | 10V | 2.5V @ 250µA | 22nC @ 10V | 1000pF @ 30V | ±20V | - | 5W (Tc) | 95 mOhm @ 4.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 20V 6.2A TSOT-26
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.15W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock7,280 |
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MOSFET (Metal Oxide) | 20V | 6.2A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 18.4nC @ 8V | 887pF @ 10V | ±10V | - | 1.15W (Ta) | 24 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock24,690 |
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MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 13nC @ 10V | 700pF @ 15V | ±20V | Schottky Diode (Isolated) | 1.6W (Ta) | 23 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V DIRECTFET L8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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Package: DirectFET? Isometric L8 |
Stock117,468 |
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MOSFET (Metal Oxide) | 150V | 375A (Tc) | 10V | 5V @ 250µA | 150nC @ 10V | 6660pF @ 25V | ±20V | - | 3.3W (Ta), 125W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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STMicroelectronics |
MOSFET N-CH 525V 4.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 525V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock519,108 |
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MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 4.5V @ 50µA | 16.9nC @ 10V | 529pF @ 25V | ±30V | - | 70W (Tc) | 1.5 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas |
NP110N055PUJ-E1B-AY - SWITCHINGN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 55A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 4V @ 250µA | 230 nC @ 10 V | 14250 pF @ 25 V | ±20V | - | 1.8W (Ta), 288W (Tc) | 2.4mOhm @ 55A, 10V | 175°C | Surface Mount | TO-263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 304W (Tc)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock1,674 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 4.5V @ 1mA | 65 nC @ 10 V | 2040 pF @ 25 V | ±30V | - | 304W (Tc) | 250mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET 30V 10A DIE
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 10A | 10V | - | - | - | - | - | - | 20mOhm @ 10A, 10V | - | Surface Mount | Die | Die |
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Vishay Siliconix |
MOSFET N-CH 60V 30A POWERPAKSO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8 Dual
- Package / Case: PowerPAK® SO-8 Dual
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Package: - |
Stock7,707 |
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MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 45W (Tc) | 12.5mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Micro Commercial Co |
MOSFET P-CH 60V 12A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W
- Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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MOSFET (Metal Oxide) | 60 V | 12A (Tj) | 4.5V, 10V | 3V @ 250µA | 12 nC @ 4.5 V | 650 pF @ 15 V | ±20V | - | 40W | 80mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 40 V (D-S)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 394W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
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Package: - |
Stock5,214 |
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MOSFET (Metal Oxide) | 40 V | 372A (Tc) | 10V | 3.5V @ 250µA | 102 nC @ 10 V | 5750 pF @ 25 V | ±20V | - | 394W (Tc) | 1.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 |
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GaNPower |
GaNFET N-CH 650V 7A DFN8x8
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Vgs(th) (Max) @ Id: 1.5V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 500 V
- Vgs (Max): +7.5V, -12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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GaNFET (Gallium Nitride) | 650 V | 7A | 6V | 1.5V @ 3.5mA | 2.1 nC @ 6 V | 60 pF @ 500 V | +7.5V, -12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
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Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 49W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262 (I2PAK)
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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MOSFET (Metal Oxide) | 60 V | 9.7A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 600 pF @ 25 V | ±30V | - | 3.8W (Ta), 49W (Tc) | 280mOhm @ 4.9A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 (I2PAK) | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 250V 3.4A/12.3A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 12.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 125 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
- Rds On (Max) @ Id, Vgs: 173mOhm @ 3.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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MOSFET (Metal Oxide) | 250 V | 3.4A (Ta), 12.3A (Tc) | 7.5V, 10V | 4V @ 250µA | 16 nC @ 10 V | 350 pF @ 125 V | ±20V | - | 5.1W (Ta), 65.8W (Tc) | 173mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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Torex Semiconductor Ltd |
MOSFET P-CH 30V 5A SOT89
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W
- Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: - |
Stock300 |
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MOSFET (Metal Oxide) | 30 V | 5A (Tj) | 4V, 10V | 2.6V @ 1mA | - | 450 pF @ 10 V | ±20V | - | 1.5W | 59mOhm @ 3A, 10V | 150°C | Surface Mount | SOT-89 | TO-243AA |
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Alpha & Omega Semiconductor Inc. |
P
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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MOSFET (Metal Oxide) | 30 V | 17A (Ta), 24A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 50 nC @ 10 V | 1995 pF @ 15 V | ±25V | - | 5W (Ta), 38W (Tc) | 11mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262F
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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MOSFET (Metal Oxide) | 700 V | 11A (Tj) | 10V | 3.6V @ 250µA | 20 nC @ 10 V | 1115 pF @ 100 V | ±20V | - | 26W (Tc) | 450mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Long Leads, I2PAK, TO-262AA |
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onsemi |
MOSFET P-CH 40V 4.7A/13.2A 8WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 13.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs: 69mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
Stock3,990 |
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MOSFET (Metal Oxide) | 40 V | 4.7A (Ta), 13.2A (Tc) | 4.5V, 10V | 2.4V @ 95µA | 6.3 nC @ 10 V | 424 pF @ 20 V | ±20V | - | 2.9W (Ta), 23W (Tc) | 69mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |