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Vishay Siliconix |
MOSFET P-CH 60V 2.5A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock615,012 |
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MOSFET (Metal Oxide) | 60V | 2.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 545pF @ 30V | ±20V | - | 2W (Tc) | 150 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 21.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (M)
- Package / Case: 10-PolarPAK? (M)
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Package: 10-PolarPAK? (M) |
Stock5,520 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 105nC @ 10V | 4500pF @ 15V | ±20V | - | 5.2W (Ta), 104W (Tc) | 2.1 mOhm @ 21.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (M) | 10-PolarPAK? (M) |
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IXYS |
MOSFET N-CH 175V 150A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 175V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,032 |
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MOSFET (Metal Oxide) | 175V | 150A (Tc) | 10V | 5V @ 1mA | 155nC @ 10V | 9800pF @ 25V | ±30V | - | 830W (Tc) | 12 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 9A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,032 |
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MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 720pF @ 25V | ±30V | - | 72W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 25V 8.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock152,868 |
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MOSFET (Metal Oxide) | 25V | 8.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 14nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.25W (Ta), 58W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 240V 0.16A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock2,096 |
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MOSFET (Metal Oxide) | 240V | 160mA (Ta) | 10V | 3V @ 1mA | - | 85pF @ 25V | ±20V | - | 700mW (Ta) | 16 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,496 |
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MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1030pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 24V 38A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock5,952 |
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MOSFET (Metal Oxide) | 24V | 38A (Tc) | 5V, 10V | 2.5V @ 250µA | 24nC @ 10V | 1070pF @ 25V | ±20V | - | 40W (Tc) | 13.5 mOhm @ 19A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 900V 7A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock2,512 |
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MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 5V @ 2.5mA | 56nC @ 10V | 2200pF @ 25V | ±20V | - | 180W (Tc) | 1.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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EPC |
TRANS GAN 100V 2.7A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: -
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Package: - |
Stock2,688 |
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GaNFET (Gallium Nitride) | 100V | 2.7A (Ta) | 5V | 2.5V @ 250µA | 0.48nC @ 5V | 55pF @ 50V | +6V, -5V | - | - | 160 mOhm @ 500mA, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | - |
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Microchip Technology |
MOSFET N-CH 500V 0.013A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock11,376 |
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MOSFET (Metal Oxide) | 500V | 13mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 21A TO-263AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,904 |
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MOSFET (Metal Oxide) | 30V | 23A (Ta), 160A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 132nC @ 10V | 5200pF @ 15V | ±20V | - | 160W (Tc) | 3.9 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock68,580 |
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MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Rohm Semiconductor |
MOSFET N-CH 30V 500MA SOT-346
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMT3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock663,012 |
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MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 4V, 10V | 2.5V @ 1mA | - | 45pF @ 10V | ±20V | - | 200mW (Ta) | 550 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 10A TO-247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 585 mOhm @ 3A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock20,796 |
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SiCFET (Silicon Carbide) | 1200V | 10A (Tc) | 18V | 4V @ 900µA | 27nC @ 18V | 463pF @ 800V | +22V, -6V | - | 85W (Tc) | 585 mOhm @ 3A, 18V | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 650V 35A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 102W (Tc)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock840 |
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MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 5V @ 1.21mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 102W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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onsemi |
MOSFET N-CH 40V RINGPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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GeneSiC Semiconductor |
SIC MOSFET N-CH 128A TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 2.69V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 542W (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock1,518 |
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SiCFET (Silicon Carbide) | 1200 V | 128A (Tc) | 15V | 2.69V @ 15mA | 219 nC @ 15 V | 5873 pF @ 800 V | ±15V | - | 542W (Tc) | 24mOhm @ 60A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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onsemi |
T6 40V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 250µA | 143 nC @ 10 V | 8862 pF @ 25 V | ±20V | - | 3.8W (Ta), 167W (Tc) | 0.82mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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MOSLEADER |
Single P -20V 2.3A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 99W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-21
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.9V @ 100µA | 99 nC @ 10 V | 3171 pF @ 25 V | ±20V | - | 99W (Tc) | 3.1mOhm @ 76A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3-21 | TO-251-3 Short Leads, IPak, TO-251AA |
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MOSLEADER |
P -20V 3.8A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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onsemi |
T6 40V LL AIZU SINGLE NCH LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 40 V | 35A (Ta), 185A (Tc) | 4.5V, 10V | 3V @ 210µA | 71 nC @ 10 V | 4301 pF @ 25 V | ±20V | - | 3.8W (Ta), 107.1W (Tc) | 1.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Package: - |
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MOSFET (Metal Oxide) | 900 V | 8.6A (Tc) | 10V | 5V @ 250µA | 72 nC @ 10 V | 2700 pF @ 25 V | ±30V | - | 240W (Tc) | 1.3Ohm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Stock18,099 |
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MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 4V @ 270µA | 86 nC @ 10 V | 7100 pF @ 100 V | ±20V | - | 300W (Tc) | 20mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Nexperia USA Inc. |
BUK4D72-30X
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Toshiba Semiconductor and Storage |
PB-FPOWERMOSFETTRANSISTORSOP8-AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 81W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2.1V @ 200µA | 26 nC @ 10 V | 2300 pF @ 15 V | ±20V | - | 960mW (Ta), 81W (Tc) | 2.9mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Torex Semiconductor Ltd |
MOSFET P-CH 30V 1.5A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4.5V, 10V | 1.9V @ 250µA | - | 160 pF @ 10 V | ±20V | - | 400mW (Ta) | 190mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |