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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,640 |
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MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | ±20V | Depletion Mode | 1.8W (Ta) | 1.8 Ohm @ 660mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,024 |
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MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | ±20V | - | 3.8W (Ta), 45W (Tc) | 175 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 300V 2.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,416 |
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MOSFET (Metal Oxide) | 300V | 2.4A (Tc) | 10V | 5V @ 250µA | 7nC @ 10V | 230pF @ 25V | ±30V | - | 2.5W (Ta), 30W (Tc) | 2.2 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,448 |
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MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | ±20V | - | 3W (Ta), 74W (Tc) | 400 mOhm @ 5.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock287,004 |
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MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 200 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 80V 50A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock518,400 |
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MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 5100pF @ 25V | ±20V | - | 150W (Tc) | 24 mOhm @ 25A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.1A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,208 |
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MOSFET (Metal Oxide) | 500V | 2.1A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 360pF @ 25V | ±20V | - | 30W (Tc) | 3 Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET PCH 40V 6A 8SO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.52W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,704 |
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MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 33.7nC @ 10V | 1640pF @ 20V | ±20V | - | 1.52W (Ta) | 25 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 3.4A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock2,000 |
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MOSFET (Metal Oxide) | 100V | 3.4A (Ta) | 6V, 10V | 4.5V @ 250µA | 17nC @ 10V | - | ±20V | - | 1.5W (Ta) | 62 mOhm @ 5.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 0.155A SC-75A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75A
- Package / Case: SC-75A
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Package: SC-75A |
Stock36,000 |
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MOSFET (Metal Oxide) | 20V | 155mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 1.5nC @ 4.5V | - | ±6V | - | 300mW (Ta) | 8 Ohm @ 150mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
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Vishay Siliconix |
MOSFET N-CH 30V 11.3A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 17.8A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock338,820 |
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MOSFET (Metal Oxide) | 30V | 11.3A (Tc) | 4.5V, 10V | 1.5V @ 250µA | 27nC @ 4.5V | 2610pF @ 15V | ±12V | - | 1.5W (Ta) | 7.5 mOhm @ 17.8A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 18A 8HSSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 3.35mA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3920pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 14.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSSO
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock4,720 |
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MOSFET (Metal Oxide) | 30V | 18A (Ta), 70A (Tc) | 4.5V, 10V | 3V @ 3.35mA | 22nC @ 4.5V | 3920pF @ 10V | ±20V | - | 2W (Ta), 28W (Tc) | 3.3 mOhm @ 14.5A, 10V | 150°C (TJ) | Surface Mount | 8-HSSO | 8-SMD, Flat Lead |
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Infineon Technologies |
MOSFET N-CH 100V 30A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1976pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock79,458 |
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MOSFET (Metal Oxide) | 100V | 30A (Tc) | 4.5V, 10V | 2.4V @ 29µA | 31nC @ 10V | 1976pF @ 25V | ±20V | - | 57W (Tc) | 31 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock93,984 |
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MOSFET (Metal Oxide) | 55V | 5A (Tc) | 4.5V, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | ±16V | - | 1W (Ta) | 60 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 25A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock242,964 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 3V @ 250µA | 16.2nC @ 10V | 920pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 34 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 20V 2.8A SOT23 T&R 3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock1,946,037 |
|
MOSFET (Metal Oxide) | 20 V | 2.8A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 2.8 nC @ 10 V | 130 pF @ 10 V | ±12V | - | 660mW (Ta) | 90mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
PSMN5R4-25YLD - N-CHANNEL 25V, L
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
MOSFET N-CH 650V 48A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 48A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI808
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
- Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI8080-5
- Package / Case: SOT-1235
|
Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 460A (Tc) | 10V | 4V @ 250µA | 117.1 nC @ 10 V | 10053 pF @ 20 V | ±20V | - | 5.6W (Ta), 428W (Tc) | 0.7mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI8080-5 | SOT-1235 |
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Infineon Technologies |
MOSFET N-CH 100V 10A 5X6 PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 10A (Ta), 55A (Tc) | - | 4V @ 100µA | 59 nC @ 10 V | 2570 pF @ 25 V | - | - | - | 14.9mOhm @ 33A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V TO252 T&R
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 22.4 nC @ 10 V | 1287 pF @ 25 V | ±20V | - | 42W (Tc) | 40mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Micro Commercial Co |
N-CHANNEL MOSFET, DFN5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 38A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1209 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tj)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060
- Package / Case: 8-PowerTDFN
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Package: - |
Stock88,845 |
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MOSFET (Metal Oxide) | 100 V | 38A | 10V | 4V @ 250µA | 17.5 nC @ 10 V | 1209 pF @ 50 V | ±20V | - | 60W (Tj) | 20mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 17A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 17A (Ta) | 4V, 10V | 1.6V @ 250µA | 105 nC @ 10 V | 5500 pF @ 15 V | ±20V | - | 3.1W (Ta) | 7mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 55V 3.4A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
- Vgs (Max): -
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 3.4A (Ta) | - | 1V @ 250µA | 38 nC @ 10 V | 690 pF @ 25 V | - | Schottky Diode (Isolated) | - | 105mOhm @ 3.4A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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onsemi |
MOSFET N-CH 80V 220A 8HPSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tj)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HPSOF
- Package / Case: 8-PowerSFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 220A (Tc) | 10V | 4V @ 250µA | 112 nC @ 10 V | 6320 pF @ 40 V | ±20V | - | 300W (Tj) | 3mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Nexperia USA Inc. |
MOSFET N-CH 40V 325A LFPAK88
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 325A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10322 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 375W (Ta)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235
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Package: - |
Stock2,790 |
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MOSFET (Metal Oxide) | 40 V | 325A (Ta) | 10V | 3.6V @ 1mA | 137 nC @ 10 V | 10322 pF @ 25 V | ±20V | Schottky Diode (Body) | 375W (Ta) | 1mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
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Qorvo |
1200V/30MOHM SIC STACKED FAST CA
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 800 V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock4,116 |
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SiCFET (Cascode SiCJFET) | 1200 V | 53A (Tc) | 12V | 6V @ 10mA | 37.8 nC @ 800 V | 1450 pF @ 15 V | ±20V | - | 341W (Tc) | 39mOhm @ 20A, 12V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 5V @ 250µA | 38 nC @ 10 V | 1465 pF @ 100 V | ±30V | - | 156W (Tc) | 155mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |